Temat: Porous silicon - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Fabrication and Characterization of Porous Silicon
Autorzy:: Duaa, Jabbar Hussein
Alzubaidy, Muneer H. Jaduaa
Abd, Ahmed N.
Tematy:: Anodization
Nanocrystalline porous silicon
XRD
porous silicon; Pokaż więcej
Data publikacji:: 2018
Powiązania:: https://bibliotekanauki.pl/articles/1157178.pdf Link otwiera się w nowym oknie
Źródło:: World Scientific News; 2018, 94, 2; 321-328
2392-2192
Pojawia się w:: World Scientific News
Opis:: In this work, nanocrystalline porous silicon layers were fabricated by photoelectrochemical etching of n type silicon (n-Si) wafer. Different etching time (15, 20, 25 and 30) min and 10 mA/cm2 current density were tested to study their effect on the formation nanosized pore array. Porous silicon is investigation by X-Ray diffractions (XRD) and atomic force microscopy properties (AFM). Crystallites size was estimated by X-Ray diffraction. Atomic Force microscopy confirmed the nonmetric size Chemical Anodization the electrochemical etching was noticed of PS. The atomic force microscopy investigation showed the rough silicon surface which increased with etching time porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Porous silicon: fabrication, characterization and photoelectronic applications
Autorzy:: Shuihab, Aliyah A.
Khalf, Surour A.
Tematy:: Anodization
FTIR & AFM
Nanocrystalline porous silicon
XRD
porosity
porous silicon; Pokaż więcej
Data publikacji:: 2018
Powiązania:: https://bibliotekanauki.pl/articles/1177955.pdf Link otwiera się w nowym oknie
Źródło:: World Scientific News; 2018, 97; 264-273
2392-2192
Pojawia się w:: World Scientific News
Opis:: In this paper, the nanocrystalline porous silicon (PS) films are prepared by electrochemical etching of p-type silicon wafer with current density (15 mA/cm2) and etching times on the formation nanosized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nano scale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a -Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
Dostawca treści:: Biblioteka Nauki

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