Temat: refractive index - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Ellipsometric spectroscopy studies of compaction and decompaction of Si-SiO2 systems
Autorzy:: Rzodkiewicz, W.
Panas, A.
Tematy:: Si-SiO2 system
density
refractive index
spectroscopic ellipsometry; Pokaż więcej
Data publikacji:: 2007
Powiązania:: https://bibliotekanauki.pl/articles/308667.pdf Link otwiera się w nowym oknie
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 44-48
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Opis:: The influence of the strain on the optical properties of Si-SiO2 system has been investigated by spectroscopic ellipsometry (SE), interferometry and weighing methods. Subtle changes of densification (compaction degree) in silicon dioxide layers on silicon substrates have been determined by weight technique (relying on measurements of the silicon dioxide layer mass and calculations of the volume). Elastic stress in the oxide layers has been measured by Fizeau fringes image analysis method. A comparison is made between the density of the silicon dioxide (r) and the results of calculations made using r = f = (n) relations (where n is the refractive index) given in the literature.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Effects of stress annealing on the electrical and the optical properties of MOS devices
Autorzy:: Rzodkiewicz, W.
Kudła, A.
Rawicki, Z.
Przewłocki, H. M.
Tematy:: stress
MOS
Si-SiO2 system
electrical parameters
refractive index; Pokaż więcej
Data publikacji:: 2005
Powiązania:: https://bibliotekanauki.pl/articles/308838.pdf Link otwiera się w nowym oknie
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 115-119
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Opis:: In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.
Dostawca treści:: Biblioteka Nauki

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