- Tytuł:
- Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
- Autorzy:
-
Głuszko, G.
Łukasiak, L.
Kilchytska, V.
Chung, T. M.
Olbrechts, B.
Flandrie, D.
Raskin, J. P. - Tematy:
-
charge-pumping
electrical characterization
interface traps
SOI
water bonding
Si layer transfer - Pokaż więcej
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Powiązania:
- https://bibliotekanauki.pl/articles/308669.pdf Link otwiera się w nowym oknie
- Opis:
- The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
- Dostawca treści:
- Biblioteka Nauki
Artykuł