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Wyszukujesz frazę "coupling effect" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
Coupling effect between magnetic wires and its influence on high gradient magnetic separation performance
Autorzy:
Jiang, Yaxiong
Zeng, Jianwu
Cao, Mengbing
Yu, Weijun
Xie, Enlong
Chen, Luzheng
Tematy:
high gradient magnetic separation
matrix
coupling effect
weakly magnetic particles
Pokaż więcej
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:
https://bibliotekanauki.pl/articles/58971355.pdf  Link otwiera się w nowym oknie
Opis:
High gradient magnetic separation (HGMS) is effective for the separation of weakly magnetic minerals, and this method is achieved through the use of matrix, which is made of huge numbers of rod wires. So that the coupling effect of magnetic field and flow field between wires has a marked effect on the HGMS performance. In the investigation, the coupling effect between magnetic wires and its influence on high gradient magnetic separation performance were theoretically described and simulated using COMSOL Multiphysics. It is found that the magnetic field round a wire would be affected by the neighboring wires, and then a coupling effect of magnetic field between wires was produced, increasing the magnetic induction intensity on the upstream and downstream of wire surface. And the coupling effect of flow field could increase the slurry velocity at the regions of the wire surface with azimuth angles of 0° and 90°, which is beneficial for the selective capture of wire. These simulated results were basically validated with the experimental separation, using an innovative Magnetic Capture Analysis Method. It is found that the wire spacing has significant effect on the coupling effect of magnetic wires, and a critical spacing for wires could achieve an excellent coupling effect, which is beneficial for the improvement of HGMS performance. This investigation contributes to improve HGMS performance in concentrating fine weakly magnetic ores.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Special size effects in advanced single-gate and multiple-gate SOI transistors
Autorzy:
Ohata, A.
Ritzenthaler, R.
Faynot, O.
Cristoloveanu, S.
Tematy:
MOSFET
SOI
ultra-thin silicon
multiple-gate
mobility
coupling effect
thin gate oxide
gate-induced floating body effect
drain-induced virtual substrate biasing
Pokaż więcej
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:
https://bibliotekanauki.pl/articles/308994.pdf  Link otwiera się w nowym oknie
Opis:
State-of-the-art SOI transistors require a very small body. This paper examines the effects of body thinning and thin-gate oxide in SOI MOSFETs on their electrical characteristics. In particular, the influence of film thickness on the interface coupling and carrier mobility is discussed. Due to coupling, the separation between the front and back channels is difficult in ultra-thin SOI MOSFETs. The implementation of the front-gate split C-V method and its limitations for determining the front- and back-channel mobility are described. The mobility in the front channel is smaller than that in the back channel due to additional Coulomb scattering. We also discuss the 3D coupling effects that occur in FinFETs with triple-gate and omega-gate configurations. In low-doped or tall fins the corner effect is suppressed. Narrow devices are virtually immune to substrate effects due to a strong lateral coupling between the two lateral sides of the gate. Short-channel effects are drastically reduced when the lateral coupling screens the drain influence.
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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