Temat: Quantum dot - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Spatio-Temporal Dynamics of Carrier Capture Processes: Simulation of Optical Signals
Autorzy:: Lengers, F.
Rosati, R.
Kuhn, T.
Reiter, D.
Tematy:: quantum dot
carrier capture
optical signals; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1033096.pdf Link otwiera się w nowym oknie
Opis:: We perform simulations of time-resolved optical experiments of carrier-capture processes in a quantum wire-dot system. Scattering of charge carriers with optical phonons of the quantum wire can result in transitions from the continuum states of the quantum wire to discrete states of the quantum dot. We treat the scattering of carriers with optical phonons within a Lindblad single-particle approach. By considering the coupling of carriers to a light field we are able to simulate pump-probe experiments which are shown to be capable of measuring the captured populations. We further discuss the influence of the Coulomb interaction on the obtained spectra.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Strain distributions in group IV and III-V semiconductor quantum dots
Autorzy:: Wijewardena Gamalath, K. A. I. L.
Fernando, M.A.I.P.
Tematy:: quantum dot
strain distribution
hydrostatic strain
biaxial strain; Pokaż więcej
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Powiązania:: https://bibliotekanauki.pl/articles/411953.pdf Link otwiera się w nowym oknie
Opis:: A theoretical model was developed using GreenˇŚs function with an anisotropic elastic tensor to study the strain distribution in and around three dimensional semiconductor pyramidal quantum dots formed from group IV and III-V material systems namely, Ge on Si, InAs on GaAs and InP on AlP. A larger positive strain in normal direction which tends to zero beyond 6nm was observed for all three types while the strains parallel to the substrate were negative. For all the three types of quantum dots hydrostatic strain and biaxial strain along x and z directions were not linear but described a curve with a maximum positive value near the base of the quantum dot. The hydrostatic strain in x-direction is mostly confined within the quantum dot and practically goes to zero outside the edges of the quantum dot. For all the three types, the maximum hydrostatic and biaxial strains occur in x-direction around �{1nm and around 2nm in z-direction. The negative strain in x-direction although realtively weak penetrate more deeper to the substrate than hydrostatic strain.The group IV substrate gave larger hydrostatic and biaxial strains than the group III-V semiconductor combinations and InAs /GaAs was the most stable. The results indicated that the movements of atoms due to the lattice mismatch were strong for group III-V.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: An obtaining of nanoheteroepitaxial structures with quantum dots for high effective photovoltaic devices, investigation of their properties
Poluchenie nanogeteroehpitaksialnykh struktur s kvantovymi tochkami dlja vysokoehffektivnykh solnechnykh ehlementov, issledovanie ikh svojjstv
Autorzy:: Maronchuk, I.
Bykovsky, S.
Bondarec, S.
Velchenko, A.
Tematy:: nanoheteroepitaxial structure
quantum dot
liquid phase
substrate
photovoltaic device
investigation
property
semiconductor compound; Pokaż więcej
Wydawca:: Komisja Motoryzacji i Energetyki Rolnictwa
Powiązania:: https://bibliotekanauki.pl/articles/792288.pdf Link otwiera się w nowym oknie
Dostawca treści:: Biblioteka Nauki

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