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    Wyświetlanie 1-8 z 8
    Tytuł:
    How material properties affect depth profiles : insight from computer modeling
    Autorzy:
    Paruch, Robert J.
    Postawa, Zbigniew
    Garrison, Barbara J.
    Opis:
    A previously developed steady-state statistical sputtering model (SS-SSM) is useful for interpretation of molecular dynamics (MD) simulations of repetitive bombardment. This method is applicable to computer modeling of depth profiling. In this paper, we demonstrate how the formalism provided by SS-SSM is used to identify the factors that determine the depth resolution of δ-layer depth profiling. The analysis is based on MD simulations of repetitive keV C60 bombardment of coinage metal samples. The results show that the primary dependence of the depth profiling quality is on the sample binding energy, with bigger binding energies giving better depth resolution. The effects of sample atom mass and surface opacity are also discussed.
    Dostawca treści:
    Repozytorium Uniwersytetu Jagiellońskiego
    Artykuł
    Tytuł:
    Simple model of surface roughness for binary collision sputtering simulations
    Autorzy:
    Postawa, Zbigniew
    Maciążek, Dawid
    Hobler, Gerhard
    Lindsey, Sloan J.
    Opis:
    It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.
    Dostawca treści:
    Repozytorium Uniwersytetu Jagiellońskiego
    Artykuł
    Tytuł:
    On universality in sputtering yields due to cluster bombardment
    Autorzy:
    Paruch, Robert J.
    Postawa, Zbigniew
    Garrison, Barbara J.
    Młynek, Maksymilian
    Opis:
    Molecular dynamics simulations, in which atomic and molecular solids are bombarded by Arn (n = 60–2953) clusters, are used to explain the physics that underlie the “universal relation” of the sputtering yield Y per cluster atom versus incident energy E per cluster atom (Y/n vs E/n). We show that a better representation to unify the results is Y/($E/U_{0}$) versus ($E/U_{0})/n$, where $U_{0}$ is the sample cohesive energy per atom or molecular equivalent, and the yield Y is given in the units of atoms or molecular equivalents for atomistic and molecular solids, respectively. In addition, we identified a synergistic cluster effect. Specifically, for a given ($E/U_{0})/n$ value, larger clusters produce larger yields than the yields that are only proportional to the cluster size n or equivalently to the scaled energy $E/U_{0}$. This synergistic effect can be described in the high ($E/U_{0})/n$ regime as scaling of Y with ($E/U_{0})^{\alpha }$, where α > 1.
    Dostawca treści:
    Repozytorium Uniwersytetu Jagiellońskiego
    Artykuł
      Wyświetlanie 1-8 z 8

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