Temat: CMOS image sensor - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Reduction of random telegraph signal (RTS) noise in CMOS image sensors using histogram analysis
Autorzy:: bin Mustafa, M. A.
Itoh, S.
Kawahito, S.
Tematy:: histogram analyses
random telegraph signal (RTS) noise
CMOS image sensor
low-noise
estimated amplitude; Pokaż więcej
Wydawca:: Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Powiązania:: https://bibliotekanauki.pl/articles/385238.pdf Link otwiera się w nowym oknie
Opis:: The paper presents column parallel signal processing techniques for reducing Random Telegraph Signal (RTS) noise of in-pixel source follower by using histogram analysis for the development of a very low-noise CMOS image sensor. In this method, a histogram with multiple samples for reset level is used to estimate the amplitude of the RTS noise. With the median of the histogram and the estimated amplitude, the RTS noise components are removed and the average is calculated with the histogram due to thermal noise only, to further reduce the noise level. Result of the application of the histogram-based noise suppres-sion to an implemented CMOS image sensor prototype for a large sampling numbers is demonstrated.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: On analog comparators for CMOS digital pixel applications. A comparative study
Autorzy:: Jendernalik, W.
Tematy:: CMOS image sensor
CMOS digital pixel
analog comparator
fixed-pattern noise
FPN
CMOS
matryca świałoczuła CMOS
piksel cyfrowy
komparator analogowy
hałas ustalony; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/200565.pdf Link otwiera się w nowym oknie
Opis:: Voltage comparator is the only - apart from the light-to-voltage converter - analog component in the digital CMOS pixel. In this work, the influence of the analog comparator nonidealities on the performance of the digital pixel has been investigated. In particular, two versions of the digital pixel have been designed in 0.35 μm CMOS technology, each using a different type of analog comparator. The properties of both versions have been compared. The first pixel utilizes a differential comparator with the increased size and improved electrical performance. The second structure is based on a very simple non-differential comparator with a reduced size and degraded performance. Theoretical analysis of the comparator nonideality effect on the quality of the image obtained from the digital pixel matrix as well as simulation results are provided.
Dostawca treści:: Biblioteka Nauki

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