Temat: 68.35.Dv - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Image Depth Profiling AES
Autorzy:: Sekine, T.
Sato, T.
Tematy:: 68.35.Dv; Pokaż więcej
Data publikacji:: 1992-01
Powiązania:: https://bibliotekanauki.pl/articles/1892328.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1992, 81, 1; 145-157
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Image depth profiling AES incorporating an image processing technique has been developed. This method reconstructs a cross-sectional image from acquired 2-dimensional and/or 3-dimensional data. A binary image produced from a secondary electron image through image processing can be used to cut the area of interest for selected area analysis. In a failure analysis of a relay contact, we found by cross-sectional image observation that Fe and Ni permeate from pin holes in an Au layer covering a Fe-Ni alloy. A VTR head made of a polycrystalline ferrite core covered with a Sendust (Si-Al-Fe alloy) layer at the gap has been analyzed. Depth distributions of Al, 0, and Fe on different grains, and Al and O distributions near grain boundaries have been successfully reassembled from the 3-dimensional data.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs
Autorzy:: Żytkiewicz, Z. R.
Dobaczewski, L.
Gomez, D.
Briones, F.
Tematy:: 68.35.Dv
68.45.Da; Pokaż więcej
Data publikacji:: 1997-11
Powiązania:: https://bibliotekanauki.pl/articles/1968456.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 1083-1086
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH$\text{}_{4}$)$\text{}_{2}$S$\text{}_{x}$ solution. The results are discussed in terms of a photoinduced process of the As$\text{}_{Ga}$ antisite generation on the sulfurized surface of GaAs.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 3.

Tytuł:: SEM Characterization of Multilayer Structures
Autorzy:: Aristov, V. V.
Dryomova, N. N.
Kireev, V. A.
Razgonov, I. I.
Yakimov, E. B.
Tematy:: 79.20.Fv
68.35.Dv; Pokaż więcej
Data publikacji:: 1993-01
Powiązania:: https://bibliotekanauki.pl/articles/1924322.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1993, 83, 1; 81-86
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The possibilities of non-destructive multilayer structure characterization using the backscattering electron and modulated cathodoluminescence modes of the SEM have been discussed. It is shown that these techniques allow one to measure the parameters of thin layers of the thickness of about 10 nm.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Some Problems in Quantitative Auger Analysis of Metallic Alloys
Autorzy:: Mróz, S.
Doliński, W.
Tematy:: 79.20.Fv
68.35.Dv; Pokaż więcej
Data publikacji:: 1992-02
Powiązania:: https://bibliotekanauki.pl/articles/1892438.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1992, 81, 2; 201-210
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Factors determining the Auger signal intensity are discussed. It is indicated that using standards is the only reasonable way for quantitative Auger analysis (QAA). Approaches to QAA without and with matrix corrections are presented. It is shown that the matrix correction connected with atomic concentrations of pure standards is the most important and that the other matrix corrections (e.g. those connected with the attenuation length and backscattering factor) do not improve appreciably the QAA exactness in many examples taken from the literature. The examples indicate that in the case of metallic alloys the properly performed QAA gives the relative atomic concentrations with the error not exceeding few percent.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 5.

Tytuł:: Composition of a Clean and Sulphur Covered CuNi(100) Single Crystal Surface
Autorzy:: Godowski, P. J.
Marcus, P.
Tematy:: 82.80.Pv
61.14.Hg
68.35.Dv; Pokaż więcej
Data publikacji:: 1995-03
Powiązania:: https://bibliotekanauki.pl/articles/1932121.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1995, 87, 3; 619-630
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Surface composition of the CuNi(100) single crystal in the temperature range of 893÷1073 K (620÷800°C) has been investigated using low energy electron diffraction and Auger electron spectroscopy methods. A clean sample surface at moderate temperatures reveals small surface copper enrichment, with respect to the bulk Cu-rich composition. For example, at 1006 K (733°C) the copper surface concentration C$\text{}_{Cu}^{s}$, was determined from the quantitative Auger electron spectroscopy analysis as 0.91. After prolonged heating at higher temperatures, the copper surface concentration converges to the bulk value, i.e. at 1073 K (800°C), C$\text{}_{Cu}^{s}$ = C$\text{}_{Cu}^{b}$ = 0.87. Surface segregation of sulphur proceeds from (1 × 1) through p(2 × 2)S/CuNi(100) to c(2 × 2)S/CuNi(100) structures of low energy electron diffraction. In the presence of segregated sulphur the surface concentration of copper is lower.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Investigations of Au Segregation in AuNi Alloys by the Line Shape Analysis of Photoelectron Spectra
Autorzy:: Lesiak, B.
Biliński, A.
Jóźwik}, A.
Tematy:: 61.82.Bg
68.35.Dv
79.60.-i; Pokaż więcej
Data publikacji:: 2006-06
Powiązania:: https://bibliotekanauki.pl/articles/2046828.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2006, 109, 6; 701-714
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The surface segregation of Au in Au5Ni95 polycrystalline alloy is studied applying the line shape analysis, known as the fuzzy k-nearest neighbour rule, to the selected X-ray photoelectron and X-ray induced Auger spectra. Each line, characterised by the kinetic electron energy exhibited in the particular transition, samples the depth described by the mean escape depth depending on the inelastic mean free path of electron in the investigated material and the geometry of the measurement. The following electron transitions in the electron kinetic energy range 216.6-1486.6 eV are analysed: Au N$\text{}_{5}$N$\text{}_{67}$V, Ni 2p, Ni L$\text{}_{2}$M$\text{}_{23}$M$\text{}_{45}$-Ni L$\text{}_{3}$M$\text{}_{45}$M$\text{}_{45}$, Au 4d, Au 4f and the valence band transitions (overlapping Au 5d6s and Ni 3d4s transitions). The results of the quantitative analysis using the fuzzy k-nearest neighbour rule are compared to the results of quantitative analysis by the multiline approach which applies the Au 4f and Ni 2p photoelectron transitions. Both methods demonstrate Au surface segregation starting at the temperature above 200ºC. The line shape analysis was shown to be applicable for quantification of the surface region with possibility of investigating the in-depth non-uniform concentration profiles.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 7.

Tytuł:: Applications of Scanning Tunneling Microscopy To Solid State Physics
Autorzy:: van Kempen, H.
Boon, E. J. G.
van der Wielen, M. C. M. M.
Wildöer, J. W. G.
Prins, M.
Jansen, R.
Schad, R.
Tematy:: 61.16.Ch
68.35.Dv
71.55.Eq; Pokaż więcej
Data publikacji:: 1998-02
Powiązania:: https://bibliotekanauki.pl/articles/1968742.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1998, 93, 2; 323-331
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Due to the dependence of the tunnel current to material properties like work function, density of states, and spin polarization the scanning tunneling microscope can be used to study a number of solid state physics problems. This will be illustrated with some examples. The presented examples have in common that also the role of the tip properties have to be taken explicitly into account.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Surface Segregation of CoPt Polycrystalline Alloy
Autorzy:: Godowski, P. J.
Ohgi, T.
Fujita, D.
Tematy:: 68.35.Dv
68.47.De
79.60.-i; Pokaż więcej
Data publikacji:: 2003-07
Powiązania:: https://bibliotekanauki.pl/articles/2036875.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2003, 104, 1; 35-44
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Composition-depth profiling using different emission angles of X-ray photoelectron spectroscopy showed surface enhancement of platinum concentration of the CoPt(30at%) alloy extensively annealed to 1000~K in ultrahigh vacuum. The results are compared with theoretical predictions basing on models with no crystal face dependence.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 9.

Tytuł:: RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN
Autorzy:: Pągowska, K.
Ratajczak, R.
Stonert, A.
Turos, A.
Nowicki, L.
Sathish, N.
Jóźwik, P.
Muecklich, A.
Tematy:: 61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv; Pokaż więcej
Data publikacji:: 2011-07
Powiązania:: https://bibliotekanauki.pl/articles/1504096.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 153-155
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × $10^{12}$ to 1 × $10^{17}$ at./$cm^2$. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 $MeV^4He$ beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 10.

Tytuł:: Response of ZnO/GaN Heterostructure to Ion Irradiation
Autorzy:: Barcz, A.
Pągowska, K.
Kozubal, M.
Guziewicz, E.
Borysiewicz, M.
Dyczewski, J.
Jakieła, R.
Ratajczak, J.
Snigurenko, D.
Dynowska, E.
Tematy:: 61.82.Fk
61.85.+p
68.35.Dv; Pokaż więcej
Data publikacji:: 2015-11
Powiązania:: https://bibliotekanauki.pl/articles/1402192.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 832-835
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.
Dostawca treści:: Biblioteka Nauki

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