Temat: 68.55.-a - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs
Autorzy:: Buda, B.
Leifeld, O.
Völlmeke, S.
Schmilgus, F.
As, D. J.
Schikora, D.
Lischka, K.
Tematy:: 68.55.-a; Pokaż więcej
Data publikacji:: 1996-11
Powiązania:: https://bibliotekanauki.pl/articles/1952466.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 997-1001
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: We investigated the GaAs/ZnSe interface and the influence of the Ga$\text{}_{2}$Se$\text{}_{3}$ formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga$\text{}_{2}$Se$\text{}_{3}$ at the surface was observed.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 2.

Tytuł:: Effect of Surface Orientation of the Substrate on the Saturation State of Solution during Liquid Phase Heteroepitaxy
Autorzy:: Olchowik, J. M.
Tematy:: 68.55.-a; Pokaż więcej
Data publikacji:: 1992-11
Powiązania:: https://bibliotekanauki.pl/articles/1921670.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 745-748
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Orientation effects during heteroepitaxy appear at the stage of the layer formation and also during the isothermal contact of the multicomponent solution with the binary substrate. In the paper, the analysis of the InP and GaP substrate orientation on the state of liquid phase was carried out. The analysis based on the in situ comparative determination of the contact supersaturation of the Ga-In-P-As and Ga-In-P solutions. It was found that the contact supersaturation of the alloy was connected with the coupling mechanism of the interface with the binary substrate.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: The Influence of Argon on the Deposition and Structure of Polycrystalline Diamond Films
Autorzy:: Benzhour, K.
Szatkowski, J.
Rozpłoch, F.
Stec, K.
Tematy:: 68.55.A-; Pokaż więcej
Data publikacji:: 2010-09
Powiązania:: https://bibliotekanauki.pl/articles/1535896.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2010, 118, 3; 447-449
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Atomic Force Microscopy Studies of the Surface Scale Formed During Oxidation of Incoloy Ma956
Autorzy:: Czyrska-Filemonowicz, A.
Wasilkowska, A.
Szot, K.
Quadakkers, W. J.
Tematy:: 68.55.-a; Pokaż więcej
Data publikacji:: 1998-02
Powiązania:: https://bibliotekanauki.pl/articles/1968770.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1998, 93, 2; 399-402
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The formation of thin oxide films on {111} and {110} single crystal specimens of Fe20Cr5Al based oxide dispersion strengthened alloy during the early stages of oxidation up to 1000°C was investigated by atomic force microscopy. The atomic force microscopy results revealed the crystalline character of a corrosion layer. The alumina scale morphology (height and grain size of crystallites) was only slightly dependent on the crystallographic texture of the underlying bulk material. The results show that atomic force microscopy has the potential to study surface structure of oxide layers in the initial stages of an oxidation process.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 5.

Tytuł:: Studies of Composition of Surfaces and Interfaces with the Use of Auger Electron Spectroscopy
Autorzy:: Mróz, S.
Tematy:: 68.35.-p
68.55.-a; Pokaż więcej
Data publikacji:: 1996-02
Powiązania:: https://bibliotekanauki.pl/articles/1945166.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1996, 89, 2; 183-193
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Processes leading to the Auger electron emission from the sample bombarded with a primary electron beam are discussed. It is shown that every element has its characteristic spectrum of Auger lines, and that owing to a small inelastic mean free path of Auger electrons, information obtained from Auger electron spectroscopy concerns the composition of surface layer of 0.5-1 nm thick. Experimental methods of Auger electron spectroscopy are presented together with problems connected with separation of Auger electrons from the secondary electron spectrum. Advantages and disadvantages of some electron energy spectrometers are considered. Methods of quantitative Auger analysis of homogeneous samples with the use of standards and catalogues of Auger spectra are presented. The role of matrix corrections in quantitative Auger analysis is discussed. Problems arising in Auger analysis of insulating samples are considered and methods of discharging of such samples are presented. Depth profiling of inhomogeneous samples by Auger electron spectroscopy with ion bombardment sputtering is described, and possibilities and limitations of this procedure are discussed. Principles of scanning Auger microscopy are presented. Factors determining the lateral resolution are discussed. Possibilities of Auger electron spectroscopy and scanning Auger microscopy in analysis of composition of grain boundaries exposed by in situ fracture are presented and discussed. Possibilities and limitations of Auger electron spectroscopy in the investigation of solid state surfaces are summarized.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Comparison of Processes Occurring during Silver Adsorption on Copper and Nickel at Elevated Temperatures
Autorzy:: Wodecki, J.
Mróz, S.
Tematy:: 68.35.-p
68.55.-a; Pokaż więcej
Data publikacji:: 1996-01
Powiązania:: https://bibliotekanauki.pl/articles/1943977.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1996, 89, 1; 69-74
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: A flux of silver atoms reevaporated from the copper and nickel targets during deposition of silver was measured as a function of the target temperature during spontaneous cooling from 1150 K and during heating the target with deposited several silver monolayers from room temperature to 1150 K. Differences in the measured dependences for both targets give the evidence of competition between reevaporation of silver atoms from the copper surface and their dissolution in the copper bulk and are in accordance with the lack of silver dissolution in nickel. Thus, the role of silver dissolution in the copper surface layer during silver adsorption at elevated temperatures is experimentally evidenced. Activation energy for silver dissolution in the copper substrate was estimated to be equal to 1.7-2.4 eV/atom.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 7.

Tytuł:: Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth
Autorzy:: Berger, H.
Möck, P.
Rosner, B.
Tematy:: 68.55.-a
68.65.+g; Pokaż więcej
Data publikacji:: 1993-08
Powiązania:: https://bibliotekanauki.pl/articles/1929560.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1993, 84, 2; 279-286
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The effect of epitaxial misorientation on substrates having vicinal surfaces is studied using two simple geometrical models. The misorientations in two epitaxial systems, single layers and superlattices, can be partially explained by means of these models. Furthermore, the fundamentals of a new description tool for orientation relationships of epitaxial systems are outlined briefly, and two examples of application are given.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Very Thin Silver Layer Growth on the Cu(1II) Face at Different Temperatures
Autorzy:: Mróz, S.
Stachnik, B.
Tematy:: 68.35.-p
68.55.-a; Pokaż więcej
Data publikacji:: 1992-02
Powiązania:: https://bibliotekanauki.pl/articles/1892480.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1992, 81, 2; 233-238
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Measurements of work function changes (ΔΦ) and Auger Electron Spectroscopy were used for investigation of very thin silver layer adsorption on the (111) face of copper crystal. At room temperature the layer-by-layer growth was observed while at temperatures above 850 K ΔΦ and the Auger peak height kinetics indicated the presence of silver diffusion to the surface layer of the copper sample.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures
Autorzy:: Jezierski, K.
Sitarek, P.
Misiewicz, J.
Panek, M.
Ściana, B.
Korbutowicz, R.
Tłaczała, M.
Tematy:: 68.55.-a
71.35.+z; Pokaż więcej
Data publikacji:: 1995-10
Powiązania:: https://bibliotekanauki.pl/articles/1933782.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 751-754
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E$\text{}_{0}$ critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen
Autorzy:: Wieteska, K.
Wierzchowski, W.
Graeff, W.
Misiuk, A.
Barcz, A.
Bryja, L.
Popov, V. P.
Tematy:: 68.55.-a
61.46.+w; Pokaż więcej
Data publikacji:: 2002-08
Powiązania:: https://bibliotekanauki.pl/articles/2035493.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2002, 102, 2; 239-244
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10$\text{}^{16}$ cm$\text{}^{-2}$ were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
Dostawca treści:: Biblioteka Nauki

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