Temat: 78.20.-e - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Room and Liquid Nitrogen Temperature Reflectivity Spectra of Ζn$\text{}_{1- x}$ Cο$\text{}_{x}$ Se Mixed Crystals
Autorzy:: Dębowska, D.
Zimnal-Starnawska, M.
Kisiel, A.
Piacentini, M.
Zema, N.
Lama, F.
Giriat, W.
Tematy:: 78.20.-e; Pokaż więcej
Data publikacji:: 1995-01
Powiązania:: https://bibliotekanauki.pl/articles/1932097.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 275-278
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The optical properties of the semiconducting compounds Zn$\text{}_{1-x}$Co$\text{}_{x}$Se crystallizing in the zinc-blende structure have been investigated. The reflectivity spectra of these materials for different concentration of Co ions, have been taken out in a wide energy range between 4 and 25 eV at room (RT) and liquid nitrogen temperature (LNT) using synchrotron radiation from ADONE Storage Ring in Frascati. The comparisons between the reflectivity spectra of ternary systems and host crystal ZnSe are made. On the basis of the experimental and theoretical results, the changes of the structures of the reflectivity spectra of host crystal ZnSe caused by the influence of transition metal ions are discussed.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 2.

Tytuł:: Investigation of Optical Response of Gasochromic Thin Film Structures through Modelling of Their Transmission Spectra under Presence of Organic Vapor
Autorzy:: Domaradzki, J.
Mazur, M.
Wojcieszak, D.
Kaczmarek, D.
Jedrzejak, T.
Tematy:: 78.20.-e; Pokaż więcej
Data publikacji:: 2015-06
Powiązania:: https://bibliotekanauki.pl/articles/1189782.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2015, 127, 6; 1702-1705
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Properties of chromogenics materials have been of great interest for more than 50 years till now. Some examples of their practical application are photochromic lenses, electrochromic smart windows or even some examples of sensors devices based on gasochromic thin films have already been commercially available on the market. However, recognition of different physical and chemical processes that influence the optical response of such materials under changes in surrounding atmosphere is still an open subject for discussion. This work presents results of experimental and theoretical investigations of optical response of the two selected gasochromic (Ti-V-Ta-W)Ox and (Ti-V-Ta-Nb)Ox oxide thin films under ethanol vapor stimulations. Based on the measured experimental transmission spectra, the complex refraction index characteristics were plotted using optical models elaborated for the VIS-NIR spectral range. The models were further used for the prediction of optical responses of optical gas sensing structures with observed gasochromic behavior.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 3.

Tytuł:: Design and Characterization of Resonator Mirrors for Microlasers on the Base of $YAlO_3$ Single Crystals Activated with $Nd^{3+}$ and $Tm^{3+}$ Ions
Autorzy:: Ilyina, O.
Hajduchok, V.
Izhnin, O.
Sugak, D.
Kuzmak, R.
Syvorotka, I.
Dyachok, Ya.
Groshovyy, I.
Vakiv, M.
Tematy:: 78.20.-e; Pokaż więcej
Data publikacji:: 2010-01
Powiązania:: https://bibliotekanauki.pl/articles/1550635.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2010, 117, 1; 244-247
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: Most of the challenges in laser technology can be overcome by using yttrium-aluminum perovskite ($YAlO_3$, YAP). These crystals are characterized by more advantages than typical $Y_3Al_{5}O_{12}$ (YAG) crystals. However, the creation of microlasers with these materials is just under development. The aim of the work was to theoretically design the input and output cavity mirrors for microlasers on the base of $YAlO_3:Nd$ or $YAlO_3:Tm$ single crystals, and to investigate those resonators obtained according to the theoretical design using electron beam evaporation method.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 4.

Tytuł:: Tunneling Control of Optical Properties of a Quantum Well from Adjacent Quantum Well by Coherent Population Trapping Effect
Autorzy:: Barantsev, K.
Litvinov, A.
Velichko, E.
Tematy:: 78.20.-e
78.40.Fy; Pokaż więcej
Data publikacji:: 2014-11
Powiązania:: https://bibliotekanauki.pl/articles/1195367.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1069-1071
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The coherent population trapping effect in double tunnel-coupled quantum wells is analyzed. One of two quantum wells interacts with the two-frequency laser radiation and low-frequency field, thus forming a closed contour of excitation. It is possible to control the excited level population in such a scheme of excitation by changing relative phases of the fields in the coherent population trapping state. The quantum well is bound to the other quantum well by tunnel coupling of the excited levels, therefore the population and optical properties of the other quantum well depend on the coherent population trapping state in the first quantum well and can be controlled.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 5.

Tytuł:: Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study
Autorzy:: Ochalski, T. J.
Żuk, J.
Vlasukova, L. A.
Tematy:: 78.66.Fd
78.20.-e; Pokaż więcej
Data publikacji:: 1997-11
Powiązania:: https://bibliotekanauki.pl/articles/1968408.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 935-939
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: We present a study of detailed line shapes of photoreflectance spectra for Al$\text{}_{0.3}$Ga$\text{}_{0.7}$ As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As band gaps (E$\text{}_{0}$). The photoreflectance spectra originated in the vicinity of the Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 6.

Tytuł:: Optical Properties of a Monoclinic Insulator Cu(H₂O)₂(en)SO₄
Autorzy:: Sýkora, R.
Postava, K.
Legut, D.
Tarasenko, R.
Tematy:: 78.20.-e
78.40.-q; Pokaż więcej
Data publikacji:: 2015-02
Powiązania:: https://bibliotekanauki.pl/articles/1386676.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2015, 127, 2; 469-471
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: We compare theoretically predicted, by means of ab-initio calculations, dielectric tensor and related experimental values obtained from Mueller-ellipsometry measurements of an insulating monoclinic (optically biaxial) crystal of Cu(H₂O)₂(en)SO₄, en=C₂H₈N₂. We concentrate on the static limit, ω→ 0.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 7.

Tytuł:: Analysis of 5f$\text{}^{3}$ → 5f$\text{}^{2}$6d$\text{}^{1}$ Transitions in the Absorption Spectrum of U$\text{}^{3+}$ in Cs$\text{}_{2}$NaYCl$\text{}_{6}$
Autorzy:: Drożdżyński, J.
Tematy:: 78.20.-e
78.20.Bh
78.20.We; Pokaż więcej
Data publikacji:: 1993-11
Powiązania:: https://bibliotekanauki.pl/articles/1929803.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1993, 84, 5; 975-977
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The electronic absorption spectrum of a Cs$\text{}_{2}$NaYCl$\text{}_{6}$ :U$\text{}^{3+}$ single crystal was investigated in the 13000-45000 cm$\text{}^{-1}$ spectral range at 300 K. An interpretation of the 5f$\text{}^{3}$ → 5f$\text{}^{2}$6d$\text{}^{1}$ transitions on the basis of the J$\text{}_{iγ}$ interaction enabled the determination of the energy of the first unresolved level of the 5f$\text{}^{2}$6d$\text{}^{1}$ electronic configuration, the distance between the first two levels of the configuration as well as the splitting parameter of the d-electron in the crystal field.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 8.

Tytuł:: Absorption Edge and Optical Band Gap of $Ag-As_{40}S_{30}Se_{30}$ Amorphous Samples
Autorzy:: Čajko, K.
Lukić-Petrović, S.
Štrbac, D.
Tematy:: 78.20.-e
78.66.Jg; Pokaż więcej
Data publikacji:: 2015-04
Powiązania:: https://bibliotekanauki.pl/articles/1401361.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2015, 127, 4; 1286-1288
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: The paper describes the results of a study of the influence of silver content on the absorption edge and optical band gap of the newly synthesized glasses of the $Ag_{x}(As_{40}S_{30}Se_{30})_{100-x}$ type for x=0, 0.5, 1, 2, 3, 5 at.% and of the corresponding films. The synthesis of bulk samples was performed in a rocking furnace from high-purity elemental components by a melt quenching method. Films were prepared from the synthesized bulk samples by pulsed laser deposition. Transmission spectra of the investigated samples were recorded at room temperature. The absorption edge and the optical band gap were determined by extrapolating the linear parts of the absorption spectra. It was found that the investigated range of Ag doping concentrations has a great influence on the absorption edge and optical band gap. Namely, with the increase of the silver content in the material the optical band gap showed a decrease. For films, it decreased from 2.02 eV, for the glass without silver, to 1.805 eV for the composition with 5 at.% Ag, whereas for the analogous bulk samples this decrease was from 1.84 eV to 1.609 eV.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 9.

Tytuł:: Optical Absorption of Some Glycine Crystals and their Aqueous Solutions
Autorzy:: Koralewski, M.
Tematy:: 78.20.-e
78.40.-q; Pokaż więcej
Data publikacji:: 2003-05
Powiązania:: https://bibliotekanauki.pl/articles/2035746.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 2003, 103, 5; 459-470
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: UV absorption spectra of glycine crystals, i.e. triglycine sulphate, selenate, diglycine sulphate as well as their deuterated analogues in solid state and aqueous solutions are given. Results are compared with the electronic transition energies calculated by LCAO INDO method for glycine molecule and ion, assuming their crystal geometry.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 10.

Tytuł:: Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
Autorzy:: Ochalski, T. J.
Żuk, J.
Regiński, K.
Bugajski, M.
Tematy:: 78.66.Fd
78.20.-e; Pokaż więcej
Data publikacji:: 1998-09
Powiązania:: https://bibliotekanauki.pl/articles/1992051.pdf Link otwiera się w nowym oknie
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 463-467
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Opis:: We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Dostawca treści:: Biblioteka Nauki

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