Wszystkie pola: 71.20.Nr - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Valency of Yb in PbS and PbTe Determined by XPS
Autorzy:: Gołacki, Z.
Heinonen, M.
Tematy:: 71.20.Nr
79.60.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1963377.pdf Link otwiera się w nowym oknie
Opis:: X-ray photoelectron spectroscopy experiments on PbTe:Yb, PbS:Yb, PbTe, and PbS crystals have been performed using the monochromatized Al K$\text{}_{α}$ radiation. The valence band spectrum of PbTe:Yb exhibits one set of peaks associated with divalent Yb initial states, but two sets associated with divalent and trivalent Yb are observed for PbS:Yb. The valency of Yb in PbTe:Yb is 2 (within an accuracy of the experiment) but in PbS:Yb the mixed valency of Yb is seen. These conclusions are confirmed by an analysis of Yb 4d spectra in PbTe:Yb and PbS:Yb crystals.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
Autorzy:: Nadolny, A. J.
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Johnson, R.
Tematy:: 79.60.-i
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1992049.pdf Link otwiera się w nowym oknie
Opis:: The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
Autorzy:: Kowalski, B. J.
Guziewicz, E.
Kopalko, K.
Orłowski, B. A.
Janik, E.
Wojtowicz, T.
Johnson, R. L.
Tematy:: 71.20.Nr
79.60.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1991616.pdf Link otwiera się w nowym oknie
Opis:: Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Electronic Structure of Some Wurtzite Semiconductors: Hybrid Functionals vs. Ab Initio Many Body Calculations
Autorzy:: Kaczkowski, J.
Tematy:: 71.15.Mb
71.20.-b
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1427431.pdf Link otwiera się w nowym oknie
Opis:: Using the first-principles projector augmented wave method, the structural and electronic properties of wurtzite crystals, AlN, GaN, InN and ZnO have been calculated. Different exchange-correlation approximations: LDA, LDA+U, GGA, GGA+U and hybrid Heyd-Scuseria-Ernzerhof method were used. We also present the values of band gap calculated within different GW approximations ($G_0W_0,$ $GW_0,$ $GW$ and $U+G_0W_0,$ the last one for materials with shallow d states). In case of structural parameters the best agreement with experiment was obtained for hybrid Heyd-Scuseria-Ernzerhof functional and in case of band gap the best agreement was for $GW$ and $U+G_0W_0$ approximation.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Electron-deformational phase transitions in a TlGaSe₂ layered crystal
Autorzy:: Kharkhalis, L.
Glukhov, K.
Sznajder, M.
Tematy:: 71.15.Mb
71.20.Nr
71.38.-k; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1157770.pdf Link otwiera się w nowym oknie
Opis:: We investigate the self-consistent localized electron states which are related to charge carrier inhomogeneities in a TlGaSe₂ crystal, in the framework of the continuum and the deformational potential approaches. For this purpose a nonstandard dispersion law for charge carriers following from the ab initio band structure calculation of the considered crystal is utilized. It is shown that a formation of stable localized electron states with different bond energy, which are separated by the potential barrier, takes place. These states can be responsible for the occurrence of the deformational phase transition in the presence of the non-equilibrium charge carriers in TlGaSe₂.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique
Autorzy:: Gelczuk, L.
Dąbrowska-Szata, M.
Jóźwiak, G.
Radziewicz, D.
Tematy:: 71.55.-i
71.55.Eq
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2038268.pdf Link otwiera się w nowym oknie
Opis:: Two deep traps associated with lattice-mismatch induced defects in n-type In$\text{}_{0.042}$Ga$\text{}_{0.958}$As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Morphology and Magnetic Coupling in ZnO:Co and ZnO:Ni Co-Doped with Li
Autorzy:: Persson, C.
Jayakumar, O.
Sudakar, C.
Sudarsan, V.
Tyagi, A.
Tematy:: 71.20.Nr
71.55.Gs
75.50.-y; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1505447.pdf Link otwiera się w nowym oknie
Opis:: $Zn_{0.95}Co_{0.05}O$ and $Zn_{0.97}Ni_{0.03}O$ nanorods, prepared by a solvothermal method, show intriguing morphology and magnetic properties when co-doped with Li. At low and moderate Li incorporation (below 10 and 3 at.% Li in the Co- and Ni-doped samples, respectively) the rod aspect ratio is increased and room temperature ferromagnetic properties are enhanced, whereas the ferromagnetic coupling in $Zn_{0.97}Ni_{0.03}O$ is decreased for Li concentrations < 3 at.%. First-principles theoretical analyses demonstrate that Li co-doping has primarily two effects in bulk $Zn_{1- x}M_{x}O$ (with M = Co or Ni). First, the Li-on-Zn acceptors increase the local magnetic moment by depopulating the M 3d minority spin-states. The magnetic coupling is Ruderman-Kittel-Kasuya-Yosida-like both without and with Li co-doping. Second, Li-on-Zn prefer to be close to the M atoms to compensate the M-O bonds and to locally depopulate the 3d states, and this will help forming high aspect nanostructures. The observed room temperature ferromagnetism in Li co-doped $Zn_{1- x}M_{x}O$ nanorods can therefore be explained by the better rod morphology in combination with ionizing the magnetic M atoms.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Low-Temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces
Autorzy:: Feenstra, R. M.
Meyer, G.
Moresco, F.
Rieder, K. H.
Tematy:: 73.20.Hb
71.20.Nr
68.37.Ef; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2036889.pdf Link otwiera się w nowym oknie
Opis:: Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described. We consider both surfaces which do not possess surface states within the bulk bandgap, such as GaAs(110), and surfaces which do have states within the gap, such as Ge(111) 2×1 and Ge(111)c(2×8). Band bending in the semiconductor due to the electric field in the vacuum penetrating the semiconductor is found to be a substantial effect in the former case. Transport limitations in the semiconductor give rise to additional voltage drops, which can be observed by making measurements over a wide range of tunnel current magnitudes.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Magnetic and Transport Properties of (III,Mn)V Ferromagnetic Semiconductors
Autorzy:: Jungwirth, T.
Sinova, J.
MacDonald, A. H.
Tematy:: 71.20.Nr
75.30.Et
75.50.Pp; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2036882.pdf Link otwiera się w nowym oknie
Opis:: The basic microscopic origins of ferromagnetism in (III,Mn)V compounds that have the highest transition temperatures appear to be well understood, and efficient computation methods have been developed which are able to model their magnetic, transport, and optical properties. We review some of the attempts over the past five years to achieve a theoretical under standing of these complex magnetic systems.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Thin Films Based on Nanocrystalline $TiO_{2}$ for Transparent Electronics
Autorzy:: Prociow, E.
Sieradzka, K.
Domaradzki, J.
Kaczmarek, D.
Mazur, M.
Tematy:: 73.61.Ey
78.66.-w
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1807647.pdf Link otwiera się w nowym oknie
Opis:: In this work, investigations of structural, optical and electrical properties of transparent oxide semiconductor thin films based on $TiO_{2}$ doped with Eu, Pd and Tb, Pd have been presented. The transparent oxide semiconductor nanocrystalline thin films were prepared by magnetron sputtering process. It was shown that doping with selected elements results in semiconducting properties of prepared thin films of oxides with p-($TiO_{2}$:(Tb, Pd)) or n-type ($TiO_{2}$:(Eu, Pd)) of electrical conduction.
Dostawca treści:: Biblioteka Nauki

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