- Tytuł:
- Dynamics of laser-induced melting and modification of the surface of semiconductors by nanosecond laser pulses
- Autorzy:
-
Gnatyuk, V.
Aoki, T.
Vlasenko, O.
Gorodnychenko, O. - Tematy:
-
semiconductors
laser irradiation
time-resolved reflectivity
melting threshold - Pokaż więcej
- Wydawca:
- Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
- Powiązania:
- https://bibliotekanauki.pl/articles/384325.pdf  Link otwiera się w nowym oknie
- Opis:
- In situ detection and dynamics of laser-induced melting in different semiconductor crystals (CdTe, CdHgTe, GaAs, InSb and SiC) were performed by the time-resolved reflectivity (TRR). The samples were subjected to irradiation with 20 ns pulses of KrF excimer or ruby laser with energy density varied in a wide range. The surface morphology of the crystals was monitored using optical microscopy and time dependences of the temperature of the crystal surface as a function of laser pulse energy density was also calculated. The melting and ablation threshold values were determined and specific features of the laser-induced phase transitions in the surface region of the semiconductors were analyzed.
- Dostawca treści:
- Biblioteka Nauki
Artykuł