Autor: Barcz, A. - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Mechanism of Thermal Interaction of In with GaAs
Autorzy:: Barcz, A.
Adamczewska, J.
Baranowski, J. M.
Kwiatkowski, S.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929763.pdf Link otwiera się w nowym oknie
Opis:: General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
Autorzy:: Kalisz, M.
Beck, R. B.
Barcz, A.
Ćwil, M.
Tematy:: fluorine
reactive ion etching
silicon fluoride
boron thermal diffusion
fluorocarbon plasma; Pokaż więcej
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:: https://bibliotekanauki.pl/articles/308657.pdf Link otwiera się w nowym oknie
Opis:: We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Interfacial Reactions between Thin Films of Zinc and (100)InP
Autorzy:: Kamińska, E.
Piotrowska, A.
Barcz, A.
Mizera, E.
Dynowska, E.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1933803.pdf Link otwiera się w nowym oknie
Opis:: The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn$\text{}_{3}$P$\text{}_{2}$ phase lattice matched to InP.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts
Autorzy:: Kamińska, E.
Piotrowska, A.
Żarecka, R.
Barcz, A.
Mizera, E.
Kwiatkowski, S.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1923883.pdf Link otwiera się w nowym oknie
Opis:: Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
Autorzy:: Demchenko, I.
Melikhov, Y.
Konstantynov, P.
Ratajczak, R.
Barcz, A.
Guziewicz, E.
Tematy:: 77.55.hf
74.25.Jb
33.60.+q; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1030972.pdf Link otwiera się w nowym oknie
Opis:: The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: High Mobility 2D Electron Gas in CdTe/CdMgTe Heterostructures
Autorzy:: Karczewski, G.
Jaroszyński, J.
Kutrowski, M.
Barcz, A.
Wojtowicz, T.
Kossut, J.
Tematy:: 73.40.Hm; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1968126.pdf Link otwiera się w nowym oknie
Opis:: We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd$\text{}_{1-y}$Mg$\text{}_{y}$Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd$\text{}_{1-y}$Mg$\text{}_{y}$Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10$\text{}^{5}$ cm$\text{}^{2}$/(V s). This is the highest mobility reported in wide-gap II-VI materials.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Study of the Local Environment of Mn Ions Implanted in GaSb
Autorzy:: Wolska, A.
Lawniczak-Jablonska, K.
Klepka, M.
Barcz, A.
Hallen, A.
Arvanitis, D.
Tematy:: 78.70.Dm
61.72.U-
61.05.cj; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1538865.pdf Link otwiera się w nowym oknie
Opis:: The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Shallow Ohmic Contact System to n-GaAs
Autorzy:: Kamińska, E.
Piotrowska, A.
Piotrowski, T. T.
Barcz, A.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929764.pdf Link otwiera się w nowym oknie
Opis:: Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen
Autorzy:: Wieteska, K.
Wierzchowski, W.
Graeff, W.
Misiuk, A.
Barcz, A.
Bryja, L.
Popov, V. P.
Tematy:: 68.55.-a
61.46.+w; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2035493.pdf Link otwiera się w nowym oknie
Opis:: The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10$\text{}^{16}$ cm$\text{}^{-2}$ were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
Autorzy:: Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Barcz, A.
Bak-Misiuk, J.
Chow, L.
Vanfleet, R.
Prujszczyk, M.
Tematy:: 61.72.Dd
61.72.uf
64.75.Qr
66.30.Xj
81.40.Xj; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1504150.pdf Link otwiera się w nowym oknie
Opis:: It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using $V^{+}$ doses, D = (1-5) × $10^{15} cm^{-2}$, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of $VSi_2$ are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of $V^{+}$ and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
Dostawca treści:: Biblioteka Nauki

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