Autor: Guziewicz, M. - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Zn(Mn)O Surface Alloy Studied by Synchrotron Radiation Photoemission
Autorzy:: Guziewicz, E.
Kopalko, K.
Sadowski, J.
Guziewicz, M.
Golacki, Z.
Tematy:: 73.20.-r
79.60.-i
79.60.Jv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2043720.pdf Link otwiera się w nowym oknie
Opis:: The Mn/ZnO(0001) system was investigated by synchrotron radiation photoemission. The Mn/ZnO interface with 4 ML of manganese deposited onto the ZnO surface was annealed up to 500ºC. No Mn capping layer was found at the surface after annealing as was confirmed by scanning Auger spectroscopy experiment. We used a resonant photoemission to extract the Mn3d partial density of states in photoemission spectra. The Mn3d states contribute to the electronic structure of the system within 10 eV of the Fermi level. They show three features: a main peak at 3.8-4.5 eV, a valence structure at the top of the valence band (1-3 eV), and a broad satellite situated between 5.5 and 9 eV below E$\text{}_{F}$. The satellite/main branching ratio was determined to be 0.43, which is a fingerprint of strong hybridization between the Mn3d electrons and the valence band of the crystal. The hybridization effect in Zn$\text{}_{1-x}$ Mn$\text{}_{x}$O surface alloy is comparable to Zn$\text{}_{1-x}$Mn$\text{}_{x}$S and much higher than in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se, Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te, and Ga$\text{}_{1-x}$Mn$\text{}_{x}$As semimagnetic compounds.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
Autorzy:: Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Turos, A.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1923915.pdf Link otwiera się w nowym oknie
Opis:: Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP
Autorzy:: Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Veresegyhazy, R.
Mojzes, I.
Pecz, B.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1891383.pdf Link otwiera się w nowym oknie
Opis:: Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Hole Traps in ZnTe with CdTe Quantum Dots
Autorzy:: Zielony, E.
Płaczek-Popko, E.
Gumienny, Z.
Trzmiel, J.
Karczewski, G.
Guziewicz, M.
Tematy:: 73.61.Ga
73.21.La
73.20.Hb; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1791335.pdf Link otwiera się w nowym oknie
Opis:: In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Shallow Ohmic Contact System to n-GaAs
Autorzy:: Kamińska, E.
Piotrowska, A.
Piotrowski, T. T.
Barcz, A.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929764.pdf Link otwiera się w nowym oknie
Opis:: Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
Autorzy:: Taube, A.
Guziewicz, M.
Kosiel, K.
Gołaszewska-Malec, K.
Król, K.
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Tematy:: aluminum oxide
MOS
silicon carbide
4H-SiC
high-K dielectrics
tlenek glinu
węglik krzemu
dielektryki high-k; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/953063.pdf Link otwiera się w nowym oknie
Opis:: The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Materials Technology for GaSb-Based optoelectronic Devices
Autorzy:: Piotrowska, A.
Kamińska, E.
Piotrowski, T. T.
Piskorski, M.
Guziewicz, M.
Papis, E.
Gołaszewska-Malec, K.
Kasjuniuk, S.
Tematy:: 73.40.Ns
81.05.Ea
81.40.-z; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1952070.pdf Link otwiera się w nowym oknie
Opis:: A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Deep Levels Induced by CdTe/ZnTe Quantum Dots
Autorzy:: Zielony, E.
Placzek-Popko, E.
Roznicka, A.
Gumienny, Z.
Szatkowski, J.
Dyba, P.
Pacuski, W.
Kruse, C.
Hommel, D.
Guziewicz, M.
Tematy:: 73.61.Ga
73.21.La
73.20.Hb; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2048061.pdf Link otwiera się w nowym oknie
Opis:: The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 9.

Tytuł:: Ohmic Contacts To GaN by Solid-Phase Regrowth
Autorzy:: Kamińska, E.
Piotrowska, A.
Barcz, A.
Ilka, L.
Guziewicz, M.
Kasjaniuk, S.
Dynowska, E.
Kwiatkowski, S.
Bremser, M. D.
Davis, R. F.
Tematy:: 73.40.Ns
73.40.Cg; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1968123.pdf Link otwiera się w nowym oknie
Opis:: Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10$\text{}^{-3}$ Ωcm$\text{}^{2}$ and ≈1×10$\text{}^{-2}$ Ωcm$\text{}^{2}$ to GaN:Si (n ≈ 2×10$\text{}^{17}$ cm$\text{}^{-3}$) and GaN:Mg (p ≈ 3×10$\text{}^{17}$ cm$\text{}^{-3}$). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts
Autorzy:: Piotrowska, A.
Kamińska, E.
Piotrowski, T.
Kasjaniuk, S.
Guziewicz, M.
Gierlotka, S.
Lin, X. W.
Liliental-Weber, Z.
Washburn, J.
Kwiatkowski, S.
Tematy:: 73.40.Ns; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1873078.pdf Link otwiera się w nowym oknie
Opis:: Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decomposes was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metallization is not a good candidate for device quality ohmic contacts to GaSb-based devices.
Dostawca treści:: Biblioteka Nauki

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