Autor: Hennel, A. - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: The Pressure Dependence of Transition Metal-Related Levels in GaAs
Autorzy:: Babiński, A.
Baj, M.
Hennel, A.
Tematy:: 71.55.Eq
62.50.+p; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1886748.pdf Link otwiera się w nowym oknie
Opis:: The hydrostatic pressure coefficients of V$\text{}^{3+}$ $\text{}^{/}$ $\text{}^{2+}$ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: "Excitonic" and Photoionization Absorption Spectra of Iron in III-V Materials
Autorzy:: Wysmołek, A.
Tryc, R.
Bożek, R.
Hennel, A.
Tematy:: 71.55.Eq
78.55.Cr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1924253.pdf Link otwiera się w nowym oknie
Opis:: We report optical absorption measurements of Fe-doped GaAs, InP and GaP crystals obtained with the help of different doping techniques. In all these crystals photoionization spectra corresponding to Fe$\text{}^{3+}$ → Fe$\text{}^{2+}$ transitions with sharp "excitonic" lines were observed. The intensities of these lines are not proportional to the intensities of photoionization absorption bands, i.e. to the concentration of the Fe$\text{}^{3+}$ centers. Variation of more than one order of magnitude was observed for different semiconductors and for different crystals of the same material. These results suggest that only some iron centers are responsible for the "excitonic" spectra.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs
Autorzy:: Wysmołek, A.
Bożek, R.
Babiński, A.
Hennel, A. M.
Tematy:: 71.55.Eq
78.55.Cr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1923845.pdf Link otwiera się w nowym oknie
Opis:: We report luminescence measurements of the intracenter transition $\text{}^{3}$T$\text{}_{2}$ → $\text{}^{3}$A$\text{}_{2}$ of the V$\text{}^{3+}$(3d$\text{}^{2}$) charge state in semi-insulating GaAs under hydrostatic pressure up to 0.8 GPa at liquid helium temperature. The hydrostatic pressure coefficient of the zero-phonon line is found to be equal to 6.9 ± 0.2 meV/GPa. This result enables us to determine the Huang-Rhys parameter, which characterizes the coupling to the symmetric mode of vibration, as S$\text{}_{A}$ = 1.4 ± 0.1. Using this parameter, computer simulation leading to a reconstruction of the shape of both luminescence and corresponding absorption spectra were performed.
Dostawca treści:: Biblioteka Nauki

Artykuł

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