Autor: Iniguez, B. - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime
Autorzy:: Osthaug, J.
Fjeldly, T.A.
Iniguez, B.
Tematy:: sub-100 nm MOSFET
two-dimensional device modeling
conformal mapping
threshold voltage
subthreshold regime
leakage current; Pokaż więcej
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:: https://bibliotekanauki.pl/articles/308041.pdf Link otwiera się w nowym oknie
Opis:: Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200-250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and quantitatively the experimental data obtained for such devices.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation
Autorzy:: Hosenfeld, F.
Horst, F..
Graef, M.
Farokhnejad, A.
Kloes, A.
Iniguez, B.
Lime, F.
Tematy:: ultra-short Double-Gate MOSFET
nonequilibrium Green's function
NEGF
ballistic transport
source-to-drain tunneling
ultra-thin body
UTB
compact model
multi-scale simulation
nierównowagowe funkcje Greena
transport balistyczny
tunelowanie źródło-dren
model kompaktowy
symulacja wieloskalowa; Pokaż więcej
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Powiązania:: https://bibliotekanauki.pl/articles/397995.pdf Link otwiera się w nowym oknie
Opis:: Shrinking gate length in conventional MOSFETs leads to increasing short channel effects like source-to-drain (SD) tunneling. Compact modeling designers are challenged to model these quantum mechanical effects. The complexity lies in the set-up between time efficiency, physical model relation and analytical equations. Multi-scale simulation bridges the gap between compact models, its fast and efficient calculation of the device terminal voltages, and numerical device models which consider the effects of nanoscale devices. These numerical models iterate between Poisson- and Schroedinger equation which significantly slows down the simulation performance. The physicsbased consideration of quantum effects like the SD tunneling makes the non-equilibrium Green’s function (NEGF) to a stateof-the-art method for the simulation of devices in the sub 10 nm region. This work introduces a semi-analytical NEGF model for ultra-short DG MOSFETs. Applying the closed-form potential solution of a classical compact model, the model turns the NEGF from an iterative numerical solution into a straightforward calculation. The applied mathematical approximations speed up the calculation time of the 1D NEGF. The model results for the ballistic channel current in DG-MOSFETs are compared with numerical NanoMOS TCAD [1] simulation data. Shown is the accurate potential calculation as well as the good agreement of the current characteristic for temperatures down to 75 K for channel lengths from 6 nm to 20 nm and channel thickness from 1.5 nm to 3 nm.
Dostawca treści:: Biblioteka Nauki

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