- Tytuł:
- Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons
- Autorzy:
-
Gaubas, E.
Kadys, A.
Uleckas, A.
Vaitkus, J. - Tematy:
-
61.72.J-
61.82.Fk
72.40.+w - Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Powiązania:
- https://bibliotekanauki.pl/articles/1813194.pdf Link otwiera się w nowym oknie
- Opis:
- Variations of recombination lifetime, with fluence of the reactor neutrons from $10^{12}$ to $3×10^{16} n//cm^2$, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
- Dostawca treści:
- Biblioteka Nauki
Artykuł