Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Klinger, D." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
Autorzy:
Klinger, D.
Kret, S.
Auleytner, J.
Żymierska, D.
Tematy:
61.72.Cc
61.72.Ff
61.72.Ji
61.72.Nn
61.80.Ba
Pokaż więcej
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:
https://bibliotekanauki.pl/articles/2035498.pdf  Link otwiera się w nowym oknie
Opis:
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods
Autorzy:
Klinger, D.
Lefeld-Sosnowska, M.
Pełka, J. B.
Paszkowicz, W.
Gierłowski, P.
Pankowski, P.
Tematy:
61.10.-i
61.10.Kw
61.72.Tt
68.35.Fx
81.40.Ef
81.65.Mq
Pokaż więcej
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:
https://bibliotekanauki.pl/articles/2030709.pdf  Link otwiera się w nowym oknie
Opis:
This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si$\text{}^{2+}$ ions of energy 140 keV and doses from 1×10$\text{}^{15}$ to 1× 10$\text{}^{16}$ ions/cm$\text{}^{2}$. The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:
Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Tematy:
61.80.Jh
61.10.-i
61.72.-y
Pokaż więcej
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:
https://bibliotekanauki.pl/articles/2011007.pdf  Link otwiera się w nowym oknie
Opis:
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multimessenger search for exotic field emission with a global magnetometer network
Autorzy:
Shin, Y. C.
Kim, D.
Semertzidis, Y. K.
Peng, X.
Ruimi, O. M.
Park, S. Y.
Klinger, E.
Pustelny, Szymon
Givon, M.
Segura, P. C.
Kimball, D. F. Jackson
Figueroa, N. L.
Buchler, B. C.
Gavilán-Martín, D.
Wickenbrock, A.
Zhang, J.
Hedges, M. P.
Łukasiewicz, Grzegorz
Budker, D.
Stalnaker, J. E.
Kryemadhi, A.
Kornack, T.
Padniuk, Mikhail
Khamis, Sami S.
Wu, T.
Masia-Roig, H.
Guo, H.
Zhao, Y.
Kukowski, N.
Palm, C. A.
Scholtes, T.
Tandon, D.
Wilson, T. Z.
Hamilton, Paul
Afach, S.
Folman, R.
Pospelov, M.
Rosenzweig, Y.
Grujić, Z. D.
Sulai, Ibrahim A.
Weis, A.
Opis:
The history of astronomy has shown that advances in sensing methods open up new windows to the Universe and often lead to unexpected discoveries. Quantum sensor networks in combination with traditional astronomical observations are emerging as a novel modality for multimessenger astronomy. Here we develop a generic analysis framework that uses a data-driven approach to model the sensitivity of a quantum sensor network to astrophysical signals as a consequence of beyond-the-standard model (BSM) physics. The analysis method evaluates correlations between sensors to search for BSM signals coincident with astrophysical triggers, such as black hole mergers, supernovae, or fast radio bursts. Complementary to astroparticle approaches that search for particlelike signals (e.g., weakly interacting massive particles), quantum sensors are sensitive to wavelike signals from exotic quantum fields. This analysis method can be applied to networks of different types of quantum sensors, such as atomic clocks, matter-wave interferometers, and nuclear clocks, which can probe many types of interactions between BSM fields and standard model particles. We use this analysis method to carry out the first direct search utilizing a terrestrial network of precision quantum sensors for BSM fields emitted during a black hole merger. Specifically, we use the global network of optical magnetometers for exotic physics (GNOME) to perform a search for exotic low-mass field (ELF) bursts generated in coincidence with a gravitational-wave signal from a binary black hole merger (GW200311_115853) detected by LIGO/Virgo on the March 11, 2020. The associated gravitational wave heralds the arrival of the ELF burst that interacts with the spins of fermions in the magnetometers. This enables GNOME to serve as a tool for multimessenger astronomy. Our search found no significant events and, consequently, we place the first lab-based limits on combinations of ELF production and coupling parameters.
Dostawca treści:
Repozytorium Uniwersytetu Jagiellońskiego
Artykuł
    Wyświetlanie 1-5 z 5

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies