- Tytuł:
- Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
- Autorzy:
-
Klinger, D.
Kret, S.
Auleytner, J.
Żymierska, D. - Tematy:
-
61.72.Cc
61.72.Ff
61.72.Ji
61.72.Nn
61.80.Ba - Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Powiązania:
- https://bibliotekanauki.pl/articles/2035498.pdf  Link otwiera się w nowym oknie
- Opis:
- An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
- Dostawca treści:
- Biblioteka Nauki
Artykuł