- Tytuł:
- The Spin-Valve Transistor - a New Magnetoelectronic Device
- Autorzy:
-
Anil Kumar, P. S.
Lodder, J. C. - Tematy:
-
75.70.-i
75.70.Pa - Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Powiązania:
- https://bibliotekanauki.pl/articles/2011222.pdf  Link otwiera się w nowym oknie
- Opis:
- A spin-valve transistor showing high sensitivity at low fields was developed. A large magnetocurrent, above 500% is realized by a magnetic field change of 2 to 4 Oe at 80 K. Hot electrons are injected into the spin-valve layer through a Si-Pt Schottky diode. These hot electrons, while traversing through the spin-valve, are spin-dependently scattered. Those electrons with right energy and momentum are collected by a collector (an Au-Si Schottky diode) constituting a collector current. The relative orientation of the magnetic layer in the spin-valve is changed by the application of a magnetic field and causes a change in collector current giving a large magnetocurrent.
- Dostawca treści:
- Biblioteka Nauki
Artykuł