- Tytuł:
- Doping of the Wide-Gap Semiconductor Cd$\text{}_{1-x}$Mg$\text{}_{x}$Te During Molecular Beam Epitaxy
- Autorzy:
-
Fischer, F.
Litz, Th.
Waag, A.
Heinke, H.
Scholl, S.
Gerschütz, J.
Landwehr, G. - Tematy:
- 68.55.Bd
- Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Powiązania:
- https://bibliotekanauki.pl/articles/1876265.pdf Link otwiera się w nowym oknie
- Opis:
- We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are considered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.
- Dostawca treści:
- Biblioteka Nauki
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