- Tytuł:
- Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers
- Autorzy:
-
Kato, G.
Tajima, M.
Okayama, F.
Tokumaru, S.
Sato, R.
Toyota, H.
Ogura, A. - Tematy:
-
78.55.Ap
61.72.Qq
82.80.Rt
88.40.jj - Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Powiązania:
- https://bibliotekanauki.pl/articles/1382111.pdf Link otwiera się w nowym oknie
- Opis:
- We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of $\text{}^16O¯$. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
- Dostawca treści:
- Biblioteka Nauki
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