- Tytuł:
- A Photoacoustic Study of Xenon Implantation in $CuInSe_2$
- Autorzy:
-
Satour, F.
Zegadi, A.
Merabet, A. - Tematy:
-
81.70.Cv
78.20.Ci
78.40.Fy
61.82.Fk
71.55.-i - Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Powiązania:
- https://bibliotekanauki.pl/articles/1492557.pdf Link otwiera się w nowym oknie
- Opis:
- In this paper, we report a study on the optical properties of xenon ion implanted $CuInSe_2$ single crystals using a high resolution near-infrared photoacoustic spectrometer of the gas-microphone type. Samples of high quality of $CuInSe_2$, p-type conducting, have been implanted with $Xe^{+}$ at 40 keV with doses of $5 \times 10^{15},$ $10^{16}$ and $5 \times 10^{16}$ ions/$cm^2$. Photoacoustic spectra have been measured before and after implantation. A newly developed theoretical model based on a two-layer sample configuration has been used to single out the spectral dependence of the absorption coefficient of the implanted layer from that of the substrate. The absorption spectra were used to evaluate the gap energy and to establish ionization energies for several shallow and deep defect states. The resulting effects following the introduction of xenon into $CuInSe_2$ at different doses are discussed in the light of published literature.
- Dostawca treści:
- Biblioteka Nauki
Artykuł