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Wyszukujesz frazę "Tkach, V." wg kryterium: Autor


Tytuł:
ZnO films: propeties determined by electronic microscopy and ellipsometry
Autorzy:
Rakov, M.
Poperenko, L.
Tkach, V.
Yurgelevich, I.
Tematy:
reactive magnetron sputtering
Beattie’s method
semi-infinite medium
AFM
SEM
nanostructures
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Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Powiązania:
https://bibliotekanauki.pl/articles/385183.pdf  Link otwiera się w nowym oknie
Opis:
Zinc oxide is a good material for application in nanoand optoelectronics due to its notable features, for example, large band gap. In this work ZnO films deposited by reactive magnetron sputtering at various pressure of residual gases and different temperatures of the substrate are investigated. The spectral dependences of ellipsometric parameters and of the films are determined by ellipsometry. The effective values of optical constants and are calculated. The roughness and the texture of the surfaces are obtained by Atomic-Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM). One indicates that the refractive index decreases when reducing the pressure of residual gases, and the roughness decreases when elevating the temperature of the substrate. Thus, the behavior of some properties of the films at various conditions of deposition is determined.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
Autorzy:
Ievtushenko, A.
Khyzhun, O.
Shtepliuk, I.
Tkach, V.
Lazorenko, V.
Lashkarev, G.
Tematy:
79.60.-i
77.55.hf
68.55.Ln
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Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:
https://bibliotekanauki.pl/articles/1399119.pdf  Link otwiera się w nowym oknie
Opis:
Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Laser synthes and optimization of parameters of thin films and epitaxial layers of In4Se3, In4Te3
Autorzy:
Vorobets, G. I.
Strebezhev, V. V.
Tkach, V. M.
Vorobets, O. I.
Strebezhev, V. M.
Tematy:
semiconductor thin film
epitaxial layer
laser treatment
indium selenide
indium telluride
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Wydawca:
Tomasz Mariusz Majka
Powiązania:
https://bibliotekanauki.pl/articles/134893.pdf  Link otwiera się w nowym oknie
Opis:
The influence of the modes of laser treatment on the structural-phase state and electrical properties of thin films and epitaxial layers In4Se3, In4Te3, as well as on the thin-film structures with Schottky barrier of type Au - In4Te3 (In4Se3) are investigated. Thin films In4Se3, In4Te3 received by pulsed laser deposition of stoichiometric homogeneous crystalline materials on a dielectric substrate. The epitaxial layers of In4Se3, In4Te3 were obtained by liquid phase epitaxy. Metal contacts are created by thermal spraying of the respective metals in a vacuum p 10-6 ÷ 10-7 Torr. For the correction of electrophysical characteristics of the studied structures the pulse laser irradiation (PLI) with 1,06 m, 1 ÷ 4 ms was used. The surface morphology of the films on various stages of formation of the structures was investigated by SEM and electron diffraction, and the phase composition was monitored by method X - ray spectral electron probe microanalysis. Study of IV characteristics of film contacts Me - In4Te3 (In4Se3) allowed further identify the phase transformation and the basic mechanisms of charge transport in barrier structures after PLI. Investigation of the spectral photosensitivity of film structures showed that under optimum conditions the laser correction can be obtained the shift of the spectral characteristics from 1,7÷1,8 microns to longer wavelengths. The investigated barrier structures may be promising for use as a photodetector for fiber optic communication lines.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructural Superconducting Materials for Fault Current Limiters and Cryogenic Electrical Machines
Autorzy:
Prikhna, T.
Gawalek, W.
Savchuk, Ya.
Sergienko, N.
Moshchil, V.
Sokolovsky, V.
Vajda, J.
Tkach, V.
Karau, F.
Weber, H.
Eisterer, M.
Joulain, A.
Rabier, J.
Chaud, X.
Wendt, M.
Dellith, J.
Danilenko, N.
Habisreuther, T.
Dub, S.
Meerovich, V.
Litzkendorf, D.
Nagorny, P.
Kovalev, L.
Schmidt, Ch.
Melnikov, V.
Shapovalov, A.
Kozyrev, A.
Sverdun, V.
Kosa, J.
Vlasenko, A.
Tematy:
74.25.Sv
74.81.Bd
74.70.Ad
74.78.Na
74.62.Fj
74.25.Ld
74.62.Dh
74.25.Ha
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Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:
https://bibliotekanauki.pl/articles/1549637.pdf  Link otwiera się w nowym oknie
Opis:
Materials of the Y-Ba-Cu-O (melt-textured $YBa_{2}Cu_{3}O_{7-δ}$-based materials or MT-YBCO) and Mg-B-O ($MgB_{2}$-based materials) systems with high superconducting performance, which can be attained due to the formation of regularly distributed nanostructural defects and inhomogeneities in their structure can be effectively used in cryogenic technique, in particular in fault current limiters and electrical machines (electromotors, generators, pumps for liquid gases, etc.). The developed processes of high-temperature (900-800°C) oxygenation under elevated pressure (16 MPa) of MT-YBCO and high-pressure (2 GPa) synthesis of $MgB_{2}$-based materials allowed us to attain high superconductive (critical current densities, upper critical fields, fields of irreversibility, trapped magnetic fields) and mechanical (hardness, fracture toughness, Young modulus) characteristics. It has been shown that the effect of materials properties improvement in the case of MT-YBCO was attained due to the formation of high twin density (20-22 $μm^{-1}$), prevention of macrocracking and reduction (by a factor of 4.5) of microcrack density, and in the case of $MgB_{2}$-based materials due to the formation of oxygen-enriched as compared to the matrix phase fine-dispersed Mg-B-O inhomogeneities as well as inclusions of higher borides with near-$MgB_{12}$ stoichiometry in the Mg-B-O matrix (with 15-37 nm average grain sizes). The possibility is shown to obtain the rather high $T_{c}$ (37 K) and critical current densities in materials with $MgB_{12}$ matrix (with 95% of shielding fraction as calculated from the resistant curve).
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Obosnovanie vlijanija faktorov na srok khranenija zerna
Justification of the influence of factors on the grain storage
Autorzy:
Paliljulka, N.
Podlesnyjj, V.
Tkach, O.
Sosnowskijj, S.
Tematy:
grain
high quality
technological quality
grain storage
humidity
temperature
vitality
durability
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Wydawca:
Komisja Motoryzacji i Energetyki Rolnictwa
Powiązania:
https://bibliotekanauki.pl/articles/77764.pdf  Link otwiera się w nowym oknie
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Internal geometry of active surfaces of teeth of cylindrical gear arch mixed gearing
Vnutrennjaja geometrija aktivnykh poverkhnostejj zubcov cilindricheskikh arochnykh peredach smeshannogo zaceplenija
Autorzy:
Shishov, V.
Tkach, P.
Chalaya, E.
Juravlyova, T.
Tematy:
arched gearing
mixed gearing
active surface
cylindrical gear
tooth gearing
equation
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Wydawca:
Komisja Motoryzacji i Energetyki Rolnictwa
Powiązania:
https://bibliotekanauki.pl/articles/792350.pdf  Link otwiera się w nowym oknie
Dostawca treści:
Biblioteka Nauki
Artykuł

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