- Tytuł:
- Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature
- Autorzy:
-
Veleschuk, V
Vlasenko, A
Kisselyuk, M
Vlasenko, Z
Khmil, D
Borshch, V - Tematy:
-
electroluminescence at reverse bias
InGaN/GaN heterostructures
defect - Pokaż więcej
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Powiązania:
- https://bibliotekanauki.pl/articles/174776.pdf Link otwiera się w nowym oknie
- Opis:
- The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer). The temperature narrowing the half-width and the shift of electroluminescence spectra peaks inherent to microplasmas were observed.
- Dostawca treści:
- Biblioteka Nauki
Artykuł