Autor: Wesch, W. - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
Autorzy:: Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Dunetz, B.
Wesch, W.
Wendler, E.
Karwat, C.
Tematy:: 61.80.-x
61.72.Ff
63.20.-e
78.66.-w; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1503945.pdf Link otwiera się w nowym oknie
Opis:: We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers
Autorzy:: Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Komarov, A.
Mudryi, A.
Wesch, W.
Wendler, E.
Zuk, J.
Kulik, M.
Ismailova, G.
Tematy:: 61.80.-x
61.72.Ff
63.20.-e
78.66.-w; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1400427.pdf Link otwiera się w nowym oknie
Opis:: Nanosized crystallites have been synthesized in the Si and $SiO_2//Si$ structures by means of As (170 keV, $3.2 × 10^{16} cm^{-2}$) and In (250 keV, $2.8 × 10^{16} cm^{-2}$) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
Dostawca treści:: Biblioteka Nauki

Artykuł

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