Autor: Wysmolek, A. - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Magnetized Plasma in Polar Semiconductors
Autorzy:: Wysmołek, A.
Tematy:: 78.30.Fs
73.20.Mf
78.20.Ls; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2047367.pdf Link otwiera się w nowym oknie
Opis:: Plasma excitations in metallic n-type GaAs are studied in high-magnetic fields using the method of inelastic light scattering (the Raman scattering). Experimental data are analyzed using a standard, dielectric function theory. The results obtained for samples with a high electron concentration are well understood in terms of longitudinal excitations. A strong interaction of coupled longitudinal optical-phonon-plasmon modes with the collective cyclotron resonance excitations (the Bernstein modes) is observed. In samples with a lower electron concentration, the unexpected feature in the vicinity of the undressed optical phonon is observed at high magnetic fields. This effect is explained in terms of transverse excitations, which would appear in the Raman spectrum due to disorder-activated selection-rule breaking. A field induced metal-insulator transition and magnetopolaron effect on shallow donors in GaAs is shown to be traced with the Raman scattering experiments in samples with the lowest electron concentration.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Shallow Donors and Acceptors in GaN; Bound Excitons and Pair Spectra
Autorzy:: Stępniewski, R.
Wysmołek, A.
Tematy:: 71.35.-y
71.55.Eq
71.38.+i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1946873.pdf Link otwiera się w nowym oknie
Opis:: Recent photoluminescence results obtained for homoepitaxial GaN layers are presented. Dominant photoluminescence structures observed for these layers can be assigned to excitons bound to neutral impurities. Different methods such as temperature dependent evolution, high magnetic field and time resolved spectroscopy have been used to study the exciton line properties. For the p-type samples sharp lines are observed, assigned to the donor-acceptor recombination for differently distant pairs. The analysis of the optical transitions related to donors and acceptors is in reasonable agreement with the effective mass approximation. Electron phonon interaction was found to strongly affect the optical properties of GaN. The dominant intrinsic defect has been identified as a donor located at a nitrogen site.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Orientation of Metastable EL2 under Uniaxial Stress
Autorzy:: Babiński, A.
Wysmołek, A.
Tematy:: 71.55.Eq
72.20.Fr
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1931913.pdf Link otwiera się w nowym oknie
Opis:: Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
Autorzy:: Babiński, A.
Wysmołek, A.
Tematy:: 71.55.Eq
72.20.Fr
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1924252.pdf Link otwiera się w nowym oknie
Opis:: The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
Autorzy:: Wysmołek, A.
Łusakowski, J.
Tematy:: 78.55.-m
72.20.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1932094.pdf Link otwiera się w nowym oknie
Opis:: Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP
Autorzy:: Babiński, A.
Wysmołek, A.
Słupiński, T.
Tematy:: 71.55.Eq; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929708.pdf Link otwiera się w nowym oknie
Opis:: The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC
Autorzy:: Wysmołek, A.
Baranowski, J. M.
Kamińska, M.
Tematy:: 78.55.-m
78.20.-e
78.60.Kn; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1934050.pdf Link otwiera się w nowym oknie
Opis:: We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: "Excitonic" and Photoionization Absorption Spectra of Iron in III-V Materials
Autorzy:: Wysmołek, A.
Tryc, R.
Bożek, R.
Hennel, A.
Tematy:: 71.55.Eq
78.55.Cr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1924253.pdf Link otwiera się w nowym oknie
Opis:: We report optical absorption measurements of Fe-doped GaAs, InP and GaP crystals obtained with the help of different doping techniques. In all these crystals photoionization spectra corresponding to Fe$\text{}^{3+}$ → Fe$\text{}^{2+}$ transitions with sharp "excitonic" lines were observed. The intensities of these lines are not proportional to the intensities of photoionization absorption bands, i.e. to the concentration of the Fe$\text{}^{3+}$ centers. Variation of more than one order of magnitude was observed for different semiconductors and for different crystals of the same material. These results suggest that only some iron centers are responsible for the "excitonic" spectra.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper
Autorzy:: Binder, J.
Stępniewski, R.
Strupiński, W.
Wysmołek, A.
Tematy:: 68.65.Pq
78.67.Wj
73.30.+y; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1033795.pdf Link otwiera się w nowym oknie
Opis:: We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Hydrostatic Pressure Spectroscopy of the Vanadium Luminescence in GaAs
Autorzy:: Wysmołek, A.
Bożek, R.
Babiński, A.
Hennel, A. M.
Tematy:: 71.55.Eq
78.55.Cr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1923845.pdf Link otwiera się w nowym oknie
Opis:: We report luminescence measurements of the intracenter transition $\text{}^{3}$T$\text{}_{2}$ → $\text{}^{3}$A$\text{}_{2}$ of the V$\text{}^{3+}$(3d$\text{}^{2}$) charge state in semi-insulating GaAs under hydrostatic pressure up to 0.8 GPa at liquid helium temperature. The hydrostatic pressure coefficient of the zero-phonon line is found to be equal to 6.9 ± 0.2 meV/GPa. This result enables us to determine the Huang-Rhys parameter, which characterizes the coupling to the symmetric mode of vibration, as S$\text{}_{A}$ = 1.4 ± 0.1. Using this parameter, computer simulation leading to a reconstruction of the shape of both luminescence and corresponding absorption spectra were performed.
Dostawca treści:: Biblioteka Nauki

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