Temat: 42.60.Mi - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Chaotic and Mixed Mode Oscillation Scenarios in Semiconductor Devices: Generation and Synchronization
Autorzy:: Abdalah, S.
Al Naimee, K.
Ciszak, M.
Marino, F.
Meucci, R.
Arecchi, F.
Tematy:: 42.60.Mi; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1490499.pdf Link otwiera się w nowym oknie
Opis:: We demonstrate the existence of chaotic spiking and mixed mode oscillations sequences in the dynamics of semiconductor devices (laser diode and light emitting diode) with ac-coupled optoelectronic feedback. We eventually show that this regime is the result of an incomplete homoclinic scenario to a saddle-focus, where an exact homoclinic connection does not occur. The synchronization scenarios have been shown.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-Signal Ratio
Autorzy:: Borowicz, L.
Borowicz, P.
Rzodkiewicz, W.
Tematy:: 42.55.Ye
85.30.Tv
77.55.-g
42.60.Mi; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1807595.pdf Link otwiera się w nowym oknie
Opis:: The signal coming from $SiO_{2}$ layer of MOS structure have large noise-to-signal ratio. This has two reasons - first: the dielectric layers have small Raman efficiency, second: the thickness of the dielectric layers are of the order of 10 nm, so the volume of the material irradiated with laser light is small. At the other side spectroscopic and optical data carry the information about important properties of the structure like mechanical stress. Distribution of mechanical stress introduce an important contribution to the electric properties of the electronic systems based on the MOS structures. Therefore, it is important to "distillate" the optical data from the noise. In this contribution the authors discuss some methods of denoising of the Raman signal. The discussed methods compare treatments like wavelet analysis or convolution. The work is illustrated with some examples of the extraction of the data coming from thin layers. The examples of application of the optical data in the description of the properties of the studied structures are presented.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Intrinsic Luminescence of the Undoped Glasses of (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) System
Autorzy:: Padlyak, B. V.
Bordun, O. M.
Buchynskii, P. P.
Tematy:: 42.70.Ce
78.60.-b
76.30.Mi; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2010938.pdf Link otwiera się w nowym oknie
Opis:: For the first time the intrinsic luminescence in the undoped (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glasses with different composition has been found and investigated in the 80÷300 K temperature range. The new glasses of high chemical purity and optical quality with stoichiometric composition similar to that in calcium-gallium- germanium garnet (Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{3}$O$\text{}_{12}$), trigonal Ca-gallogermanate (Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{4}$O$\text{}_{14}$), and Ca$\text{}_{3}$Ga$\text{}_{2}$O$\text{}_{6}$ crystals were obtained by the high-temperature synthesis method. The luminescence and photoexcitation spectra analysis, supported by EPR spectroscopy data, yields the following results: (i) the UV-excited non-elementary broad emission band with maxima at roughly 500 nm and 420 nm in the (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glasses is due to recombination of ensemble of the transient hole O$\text{}^{-}$ centres; (ii) the emission bands with maxima at nearly 380 and 710 nm, which were distinctly revealed in glasses with the Ca$\text{}_{3}$Ga$\text{}_{2}$Ge$\text{}_{4}$O$\text{}_{14}$ and Ca$\text{}_{3}$Ga$\text{}_{2}$O$\text{}_{6}$ compositions, are assigned to the luminescence of UV-induced electron centres of two different types. Possible models of the luminescence centres in (CaO-Ga$\text{}_{2}$O$\text{}_{3}$-GeO$\text{}_{2}$) glass network are discussed.
Dostawca treści:: Biblioteka Nauki

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