- Tytuł:
- Investigation of Quantum Dot Structures Grown by MOCVD in InAs/GaAs System
- Autorzy:
-
Jasiński, J.
Bożek, R.
Stępniewski, R.
Kozubowski, J. - Tematy:
-
68.55.-a
61.16.Bg - Pokaż więcej
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Powiązania:
- https://bibliotekanauki.pl/articles/1991544.pdf  Link otwiera się w nowym oknie
- Opis:
- Layers of InAs quantum dots grown on [100] GaAs substrates were characterised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyramids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band.
- Dostawca treści:
- Biblioteka Nauki
Artykuł