Temat: 61.70.-r - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: EL2 in GaAs: Present Status
Autorzy:: Baraff, G. A.
Tematy:: 61.70.-R; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1920968.pdf Link otwiera się w nowym oknie
Opis:: Even after a decade of intense investigation, the microscopic nature of EL2 is still controversial. Two models must still be considered seriously, namely that EL2 is the isolated AsGa antisite, and that EL2 also contains an arsenic interstitial on the (111) axis. This paper will comment on experiments used to support each of the two models, and will discuss attempts to reconcile the two.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Hydrogen Passivation in Semiconductors
Autorzy:: Stavola, M.
Tematy:: 61.70.-r
61.70.Tm; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1920967.pdf Link otwiera się w nowym oknie
Opis:: A survey is presented of the structure, stability, and reorientation kinetics of acceptor-H and donor-H complexes in Si and III-V semiconductors. A few examples of the unintentional introduction of H into device materials are also discussed.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation
Autorzy:: Khrupa, V. I.
Grigoryev, D. O.
Skorokhod, M. Ya.
Datsenko, L. I.
Bąk-Misiuk, J.
Tematy:: 81.40.-z
61.70.-r; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1931661.pdf Link otwiera się w nowym oknie
Opis:: Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α$\text{}_{1}}$ line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Electric Field Enhanced Emission of Holes from the Double Donor Level of the EL2 Defect in GaAs
Autorzy:: Mąkosa, A.
Wosiński, T.
Szkiełko, W.
Tematy:: 71.55.Eq
61.70.-r; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1923805.pdf Link otwiera się w nowym oknie
Opis:: Strong electric-field enhancement of the thermal emission rate of holes from the doubly ionized charge state of the EL2 defect was revealed with the deep-level transient spectroscopy in p-type GaAs and analyzed in a model of phonon-assisted tunnel effect. Similar dependence observed for the electric field directions parallel to three main crystallographic axes suggests tetrahedral symmetry of the defect which is consistent with its identification as the arsenic antisite.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 5.

Tytuł:: Interaction between In Impurity Atoms and Impurity Atoms of Mn and Co Dissolved in Silver
Autorzy:: Sternik, M.
Królas, K.
Tematy:: 61.70.-r
76.80.+y; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1924278.pdf Link otwiera się w nowym oknie
Opis:: The interaction between impurities of two solute elements in metal hosts leads to a non-random distribution of impurity atoms among the lattice sites. Experimental studies of this distribution provide quantitative information on the energy involved in the formation of an individual impurity-impurity pair. The perturbed angular correlation measurements performed with $\text{}^{111}$In probe atoms and Mössbauer spectra of $\text{}^{57}$Co are used to derive the interaction energy of In atoms with Mn and Co atoms introduced into silver matrix. It is demonstrated that In atoms attract Mn and Co atoms and in the case of In-Mn pair the interaction energy value was determined. The obtained results are discussed in the frame of the semiempirical model and the recent first principles theoretical calculations.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Native Defects in Gallium Arsenide Grown by Synthesis, Solute Diffusion Method
Autorzy:: Fronc, K.
Mąkosa, A.
Wosiński, T.
Tematy:: 61.70.-r
71.55.Eq; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1890874.pdf Link otwiera się w nowym oknie
Opis:: High-purity n-type GaAs crystal was grown by the Synthesis, Solute Diffusion (SSD) method. Deep Level Transient Spectroscopy (DLTS) characterization of the crystal revealed three deep traps related to native defects. Microscopic origin of the traps is discussed and prospective use of SSD-grown GaAs as a bulk material with the high luminescence efficiency is emphasized.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 7.

Tytuł:: Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
Autorzy:: Misiuk, A.
Adamczewska, J.
Bąk-Misiuk, J.
Härtwig, J.
Morawski, A.
Witczak, Z.
Tematy:: 61.70.At
61.70.-r
81.40.-z; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1890764.pdf Link otwiera się w nowym oknie
Opis:: The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Observation of Interference Fringes in Bragg-Case Synchrotron Double-Crystal Images of Stacking Faults in Diamond
Autorzy:: Wierzchowski, W.
Moore, M.
Tematy:: 61.10.-i
61.70.-r; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1920862.pdf Link otwiera się w nowym oknie
Opis:: Bragg-case synchrotron double-crystal images of stacking faults were studied in a slab prepared from a synthetic diamond of a good quality. The images of stacking faults in topographs taken on the tails of the rocking curve exhibited well pronounced interference fringes. The fringes were strongly dependent on the angular setting and they were less spaced further from the maximum. The experimental images were compared with those theoretically predicted from an application of plane-wave dynamical theory. A reasonably good correspondence between theoretical and experimental images was obtained. The theoretical images of stacking faults were dependent on the type of stacking fault, producing some difference in the first fringe.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: The Images of Dislocations in Synchrotron Bragg-Case Section Topography of Diamond
Autorzy:: Wierzchowski, W.
Moore, M.
Tematy:: 61.10.-i
61.70.-r; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1920864.pdf Link otwiera się w nowym oknie
Opis:: Bragg-case synchrotron section topographs were studied in parallel slabs cut from a synthetic diamond of a good quality. The topographs revealed the Pendellösung fringes and images of dislocations and other defects containing several fringe systems. The experiment provided the opportunity for studying of the theoretical dislocation images obtained by numerical integration of the Takagi-Taupin equations. A program employing a variable step of integration in the Bragg-case has been presented. The influence of the finite slit width and of the limited beam divergence on the theoretical images is also discussed.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 10.

Tytuł:: Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment
Autorzy:: Datsenko, L. I.
Misiuk, A.
Härtwig, J.
Briginets, A.
Khrupa, V. I.
Tematy:: 81.40.-z
61.70.-r; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1931660.pdf Link otwiera się w nowym oknie
Opis:: The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
Dostawca treści:: Biblioteka Nauki

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