Temat: 61.72.Nn - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te
Autorzy:: Borysiuk, J.
Kozubowski, J. A.
Słupiński, T.
Tematy:: 61.72.Nn
61.72.Vv
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1948467.pdf Link otwiera się w nowym oknie
Opis:: Extended type defects in heavily doped GaAs:Te (n≈1×10$\text{}^{19}$ cm$\text{}^{-3}$) after annealing at 700°C and 1150°C were studied by transmission electron microscopy, by high resolution technique and energy-dispersive X-ray analysis. Assuming, according to the literature that these defects are enriched in impurity atoms it is suggested that this solely is not sufficient to explain changes of electrical properties during annealing. Estimated amount of atoms involved in faulted dislocation loops seems to be too small, energy-dispersive X-ray microanalysis of precipitates did not show large differences in composition with the matrix.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 2.

Tytuł:: Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of $SrLaGaO_4$
Autorzy:: Malinowska, A.
Lefeld-Sosnowska, M.
Wieteska, K.
Wierzchowski, W.
Pajączkowska, A.
Graeff, W.
Tematy:: 61.72.Ff
61.72.Nn
61.72.Lk
61.72.Qq; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1812255.pdf Link otwiera się w nowym oknie
Opis:: $SrLaGaO_4$ single crystals are perspective substrate materials for high temperature superconductors thin films, elements of thermal radiation receivers and other electronic devices. The defect structure of the Czochralski grown $SrLaGaO_4$ crystal was investigated by means of X-ray topography exploring both conventional and synchrotron sources. The crystal lattice defects in the core region of the crystal were investigated. The regular network of defects arranged in rows only in ⟨100⟩ direction was observed. Owing to high resolution of synchrotron radiation white beam back reflection topographs one can distinguish individual spots forming the lines of the rows. It can be supposed that these elongated rod-like volume defects are located in 100 lattice planes forming a kind of walls. They are built approximately of the same phase as crystal but crystallize at a different moment than a rest of the crystal due to the constitutional supercooling.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 3.

Tytuł:: Exciton in 2D Cubic Inclusion in Hexagonal GaN
Autorzy:: Suffczyński, M.
Stępniewski, R.
Baranowski, J. M.
Tematy:: 73.20.Dx
78.66.-w
61.72.Nn; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1968430.pdf Link otwiera się w nowym oknie
Opis:: An inclusion of cubic GaN in an otherwise hexagonal matrix is considered to be equivalent to an effective quantum well. The exciton binding energy in a quantum well of a finite potential barrier height in the conduction and valence bands is calculated in the effective mass approximation with a variational envelope function type of Bastard and Takagahara. The exciton binding energy and the energy of exciton recombination line are computed, as a function of the well width, for realistic potential barrier heights and band-offset ratios.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 4.

Tytuł:: Rare Earth Ion Implantation in GaN: Damage Formation and Recovery
Autorzy:: Gloux, F.
Ruterana, P.
Wojtowicz, T.
Lorenz, K.
Alves, E.
Tematy:: 61.72.Vv
61.72.Nn
68.37.Lp
81.05.-t; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2046897.pdf Link otwiera się w nowym oknie
Opis:: Rare earth ions implanted GaN has been investigated by transmission electron microscopy versus the fluence, using Er, Eu or Tm ions at 150 keV or 300 keV and at room temperature. Point defect clusters and stacking faults are generated from low fluences (7×10$\text{}^{13}$ at/cm$\text{}^{2}$), their density increases with the fluence up to the formation of a highly disordered layer at the surface. This highly disordered layer is observed from a threshold fluence of 3×10$\text{}^{14}$ at/cm$\text{}^{2}$ at 150 keV and 3×10$\text{}^{15}$ at/cm$\text{}^{2}$ at 300 keV, and appears to be composed of voids and misoriented nanocrystallites. Its thickness rapidly increases with the fluence, and then saturates. Both basal and prismatic stacking faults were observed. Basal stacking faults are I$\text{}_{1}$ in majority, but E or I$\text{}_{2}$ have also been identified. I$\text{}_{1}$ basal stacking faults propagate easily through GaN by folding from basal to prismatic planes. Channelling implantation, increasing the implantation temperature from room temperature to 500ºC, or implanting through a 10 nm thick AlN cap reduce the crystallographic damage, particularly by retarding the formation of the highly disordered layer. Implanting through the AlN cap allows the highly disordered layer formation threshold fluence to be increased by one order of magnitude, as well as the annealing at high temperature (1300ºC) which brings about a strong optical activation of the rare earths.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 5.

Tytuł:: Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
Autorzy:: Klinger, D.
Kret, S.
Auleytner, J.
Żymierska, D.
Tematy:: 61.72.Cc
61.72.Ff
61.72.Ji
61.72.Nn
61.80.Ba; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2035498.pdf Link otwiera się w nowym oknie
Opis:: An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Image Force Effect on the Separation of Partial Dislocations in Bicrystals of Hexagonal Structure Zn-Tl and Zn-Be
Autorzy:: Ayadi, A.
Khalfallah, O.
Tematy:: 61.72.Lk
61.72.Mm
61.72.Nn
62.20.D-; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1399804.pdf Link otwiera się w nowym oknie
Opis:: We study the elastic interaction between a pair of partial dislocations, resulting from the dissociation of a perfect dislocation, and a bimetallic interface. The forces that act on two partials dislocations are the forces due to elastic interaction between the partial and image forces due to interactions of partial dislocations with interface. We are interested in the effect of image force on width of the stacking fault ribbon between two Schockley partials. We show that the separation of two partials dislocations is modified compared to that in the single crystal. It depends on the ratio of shear modulus and the distance between the interface and the dislocation.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 7.

Tytuł:: Some Recent Results on the 3C-SiC Structural Defects
Autorzy:: Mantzari, A.
Andreadou, A.
Marinova, M.
Polychroniadis, E.
Tematy:: 68.37.Lp
68.37.Og
61.72.Nn
61.72.Mm; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1491273.pdf Link otwiera się w nowym oknie
Opis:: This work presents some recent results on the 3C-SiC structural defects, studied by transmission electron microscopy. The samples were grown in several laboratories, using different methods. There has always been special attention to the region close to the interface between the seed and the overgrown material. This is due to the fact that this region is very important to the evolution of defects during growth. The main defects in SiC are micropipes, double position boundaries, stacking faults and dislocations. The defects that are most frequently observed in 3C-SiC and more difficult to eliminate are inclusions of other polytypes, twins and microtwins and mainly stacking faults.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Electron Microscopy and X-ray Structural Investigations of Incommensurate Spin-Ladder Sr$\text{}_{4.1}$Ca$\text{}_{4.7}$Bi$\text{}_{0.3}$Cu$\text{}_{17}$O$\text{}_{29}$ Single Crystals
Autorzy:: Dłużewski, P.
Pietraszko, A.
Kozłowski, M.
Szczepańska, A.
Górecka, J.
Baran, M.
Leonyuk, L.
Babonas, G.-J.
Lebedev, O.
Szymczak, R.
Tematy:: 61.72.Nn
61.72.Mm
74.72.-h
61.16.Bg
61.10.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2014560.pdf Link otwiera się w nowym oknie
Opis:: Transmission electron microscopy and X-ray diffraction proved chain ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3° around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
Autorzy:: Borysiuk, J.
Wysmołek, A.
Bożek, R.
Strupiński, W.
Baranowski, J.
Tematy:: 68.37.Lp
78.55.-m
61.72.Nn
68.65.Fg
61.72.up; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1811916.pdf Link otwiera się w nowym oknie
Opis:: Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Epitaxially Induced Defects in Sr- and O-doped La$\text{}_{2}$CuO$\text{}_{4}$ Thin Films Grown by MBE: Implications for Transport Properties
Autorzy:: Locquet, J.-P
Williams, E. J.
Tematy:: 61.72.Nn
74.62.Fj
81.15.Hi
74.72.Dn; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1964235.pdf Link otwiera się w nowym oknie
Opis:: In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T$\text{}_{c}$ thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.
Dostawca treści:: Biblioteka Nauki

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