Temat: 61.72.Vv - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Influence of Yb on Valence Band Density of States of CdYbTe and PbYbTe - a Resonant Photoemission Study
Autorzy:: Szamota-Sadowska, K.
Kowalski, B. J.
Guziewicz, E.
Orłowski, B. A.
Sadowski, J.
Gołacki, Z.
Ghijsen, J.
Johnson, R. L.
Belkhou, R.
Radosavkič, D.
Martinotti, D.
Barrett, N.
Guillot, C.
Tematy:: 61.72.Vv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1952185.pdf Link otwiera się w nowym oknie
Opis:: Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f$\text{}^{14}$ were observed at the binding energies close to the edge of the valence band while the 4f$\text{}^{13}$ states were revealed deep in the valence band.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 2.

Tytuł:: Examples of Microstructure-Related Properties of Gallium Nitride
Autorzy:: Leszczyński, M.
Tematy:: 61.72.Ji
61.72.Vv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1967996.pdf Link otwiera się w nowym oknie
Opis:: The work provides a brief overview and the latest experimental results concerning the microstructure of gallium nitride. Because of the importance for the optoelectronic and electronic technologies, mainly problems related to the lattice mismatch between substrates and GaN layers are discussed. Three main substrates, sapphire, silicon carbide and high-pressure-grown bulk GaN crystals, are compared. Mosaicity, thermal strains and surface roughnesses of the GaN layers grown on those substrates are reported. The application of high-pressure technologies makes it possible to use temperatures higher by a few hundred degrees with respect to the atmospheric pressure for which the decomposition of gallium nitride occurs at temperatures below 1000°C. Annealing at pressures higher than 10 kbar and temperatures up to 1550° C causes modifications of the microstructure of GaN heteroepitaxial layers on sapphire. For example, their mosaicity decreases as observed by narrowing of the X-ray diffraction peaks. The implanted layers recover upon high-pressure annealing and give a strong dopant-related luminescence.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 3.

Tytuł:: Random Microscopic Model of Quaternary Alloys
Autorzy:: Konior, J.
Łażewski, J.
Kisiel, A.
Tematy:: 61.72.Vv
61.66.Dk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1963389.pdf Link otwiera się w nowym oknie
Opis:: A random model of microscopic structure of zinc-blende type A$\text{}_{1-x}$B$\text{}_{x}$C$\text{}_{1-y}$D$\text{}_{y}$ quaternary alloys, based entirely on the elastic bond-stretching and bond-bending forces of two-element components AC, AD, BC, and BD, was constructed. The model was applied to Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ quaternary alloys and the calculated nearest-neighbor distances were compared with the experimental data. Additionally, a possibility of particle exchange (within each sublattice) was included into the model and a possibility of studying the preferential coordination was discussed.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 4.

Tytuł:: Lattice Constant of Doped Semiconductor
Autorzy:: Leszczyński, M.
Litwin-Staszewska, E.
Suski, T.
Bąk-Misiuk, J.
Domagała, J.
Tematy:: 61.72.Vv
65.70.+y; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1933910.pdf Link otwiera się w nowym oknie
Opis:: The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Polarity Related Problems in Growth of GaN Homoepitaxial Layers
Autorzy:: Leszczyński, M.
Prystawko, P.
Śliwinski, A.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Paszkiewicz, R.
Tłaczała, M.
Beaumont, B.
Gibart, P.
Barski, A.
Langer, R.
Knap, W.
Frayssinet, E.
Tematy:: 61.72.Vv
65.70.+y; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1991873.pdf Link otwiera się w nowym oknie
Opis:: Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
Autorzy:: Leszczyński, M.
Teisseyre, H.
Suski, T.
Grzegory, I.
Boćkowski, M.
Jun, J.
Pałosz, B.
Porowski, S.
Pakuła, K.
Baranowski, J. M.
Barski, A.
Tematy:: 61.72.Ji
61.72.Vv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1952040.pdf Link otwiera się w nowym oknie
Opis:: Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 7.

Tytuł:: Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
Autorzy:: Korona, K. P.
Jasiński, J.
Kurpiewski, A.
Kamińska, M.
Jagadish, C.
Tan, H. H.
Krotkus, A.
Marcinkevicius, S.
Tematy:: 61.72.Vv
72.20.Jv
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1951117.pdf Link otwiera się w nowym oknie
Opis:: Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10$\text{}^{14}$ to 5×10$\text{}^{16}$ cm$\text{}^{-2}$. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: δ-Doped CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Multiple Quantum Wells Investigated by Photoreflectance Spectroscopy
Autorzy:: Sitarek, P.
Misiewicz, J.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Tematy:: 61.72.Vv
78.66.Hf; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1933972.pdf Link otwiera się w nowym oknie
Opis:: Room temperature photoreflectance spectroscopy was used to investigate CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te multiple quantum wells grown by MBE. Structures were indium δ-doped into the well or into the barrier. The value of heavy and light hole subbands splitting was measured and compared to the calculated ones. The influence of the position of δ-doping on the measured spectra was shown.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: Size of Muonium Hydride
Autorzy:: Suffczyński, M.
Kotowski, T.
Wolniewicz, L.
Tematy:: 36.10.Gv
61.72.Vv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2035533.pdf Link otwiera się w nowym oknie
Opis:: Binding energy and expectation values of the interparticle distances of muonium hydride are calculated variationally with a wave function dependent exponentially on three interparticle distances.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 10.

Tytuł:: Effect of Density Gradient on the Acousto-Electric Wave Instability in Ion-Implanted Semiconductor Plasmas
Autorzy:: Ghosh, S.
Khare, Pragati
Tematy:: 61.72.Vv
72.30.+q
82.70.Dd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2044639.pdf Link otwiera się w nowym oknie
Opis:: Using hydrodynamic model of inhomogeneous plasma, an analytical investigation of excitation of acousto-electric mode was made in n-type piezoelectric ion-implanted semiconductor plasma. By employing the multi-fluid balance equations along with the elastic and Maxwell equations, a compact dispersion relation for the cases in which colloidal grains are either stationary (ϑ$\text{}_{0d}$=0) or streaming (ϑ$\text{}_{0d}$≢0$) is derived. We find that the choice of homogeneous medium is favorable in achieving higher acoustic gain per radian and the results of the investigation should be useful in understanding the characteristics of longitudinal acousto-electric wave in ion-implanted piezoelectric semiconductor whose main constituents are electrons and negatively charged colloidal particles.
Dostawca treści:: Biblioteka Nauki

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