Temat: 61.72.uj - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure
Autorzy:: Pietnoczka, A.
Bacewicz, R.
Slupinski, T.
Antonowicz, J.
Wei, Su-Huai
Tematy:: 61.05.cj
61.72.uj; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1431547.pdf Link otwiera się w nowym oknie
Opis:: The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional $Te_{As}$ model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Effect of Cu Negative Ion Implantation on Physical Properties of $Zn_{1-x}Mn_xTe$ Films
Autorzy:: Pogrebnjak, A.
Shypylenko, A.
Amekura, H.
Takeda, Y.
Opanasyuk, A.
Kurbatov, D.
Kolotova, I.
Klymov, O.
Kozak, C.
Tematy:: 61.05.cp
61.72.uj; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1400485.pdf Link otwiera się w nowym oknie
Opis:: The paper deals with the investigations of structural properties of $Zn_{1-x}Mn_xTe$ films, which were fabricated under various deposition conditions using the thermal evaporation method in a closed volume. The surface morphology of the samples was studied, the phase analysis of their structures was performed, the elemental analysis of the films and the crystal lattice constant were investigated. The texture perfection of the films before and after copper ion implantation was evaluated.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
Autorzy:: Żukowski, P.
Węgierek, P.
Billewicz, P.
Kołtunowicz, T.
Komarov, F.
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1504001.pdf Link otwiera się w nowym oknie
Opis:: The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process
Autorzy:: Węgierek, P.
Billewicz, P.
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1402240.pdf Link otwiera się w nowym oknie
Opis:: Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Free Carrier Scattering in Metallic n-GaAs in the Presence of Static Lattice Distortions Due to a Partial Chemical Order of Impurities
Autorzy:: Słupiński, T.
Molas, M.
Papierska, J.
Tematy:: 61.72.sd
61.72.uj
72.20.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1791426.pdf Link otwiera się w nowym oknie
Opis:: Simple electric transport versus T = 20-400 K in metallic n-GaAs annealed single crystals with Te impurity concentration ∿(0.4-1.7) × $10^{19} cm^{-3}$, which is above the equilibrium doping limit, is reported and compared with modern theory of electron mobility in degenerated n-GaAs by Szmyd, Hanna, Majerfeld. An overcome of the equilibrium doping limit in annealed n-GaAs is manifested by a lowered electrical activation of Te donors and by an onset of ≈ 0.1-1 μm regions of local strain in the crystal lattice known from high resolution X-ray studies. These preliminary results of transport show that the electron mobility μ(T) measured for n-GaAs with local strains is not consistent with predictions of Szmyd et al. model for any degree of compensation assumed. This surprising result indicates that electric transport in materials above the equilibrium doping limit is not well understood assuming the scattering by ionized impurities. The nature of defects responsible for an observed strong reduction of free carrier concentration (here ≈ 80%) in annealed heavily doped n-GaAs seems not to be related with electrical compensation. We point here at the possible role of effects of free carrier scattering due to static lattice distortions (local strains) related to a chemical aggregation of impurity atoms. We also notice that transport in metallic n-GaAs with local strains shows features similar to a weak localization $σ_{xx}$ ∝ log T.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Effect of Stress on Defect Transformation in $B^{+}$ and $Ag^{+}$ Implanted HgCdTe/CdZnTe Structures
Autorzy:: Savkina, R.
Smirnov, A.
Gudymenko, A.
Kladko, V.
Sizov, F.
Frigeri, C.
Tematy:: 61.72.uj
81.16.Rf; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1363515.pdf Link otwiera się w nowym oknie
Opis:: The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) $Hg_{1-x}Cd_{x}Te$ (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses $(B^{+}$ and $Ag^{+})$ leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × $10^3$ Pa and 2.2 × $10^5$ Pa, respectively). The structural properties of the $Hg_{1-x}Cd_{x}Te$ epilayers were investigated using X-ray high-resolution reciprocal space mapping.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 7.

Tytuł:: Deposition and Characterization of CdS, CuS and ZnS Thin Films Deposited by SILAR Method
Autorzy:: Guzeldir, B.
Saglam, M.
Ates, A.
Tematy:: 61.05.-a
61.05.cp
61.72.uj; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1490738.pdf Link otwiera się w nowym oknie
Opis:: Cadmium sulfide, copper sulfide and zinc sulfide films were grown on Si(111) substrate by successive ionic layer adsorption and reaction method at room temperature. The crystalline structure and morphology of obtained films were characterized by X-ray diffraction, scanning electronic microscope and energy dispersive X-ray analysis methods. The films were polycrystalline and showed preferred orientation. The surface morphology of these films looked relatively smooth and homogeneous in the scanning electron microscope image. The energy dispersive X-ray analysis spectra showed that the expected elements exist in the thin films.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Analysis of Interaction of Surfactant Molecules with Si(hkl) Planes on the Basis of Anisotropic Etching in Alkaline Solutions
Autorzy:: Zubel, I.
Kramkowska, M.
Tematy:: 61.30.Hn
61.72.uj
64.70.kg; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1807532.pdf Link otwiera się w nowym oknie
Opis:: In the paper, measurements of surface tension of solutions used for silicon etching and results of etching in the solutions are presented. Based on the obtained results, the analysis of interactions of surfactants with differently oriented silicon planes has been carried out.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with $Ne^{+}$ Ions
Autorzy:: Węgierek, P.
Billewicz, P.
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1400487.pdf Link otwiera się w nowym oknie
Opis:: The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of $Ne^{+}$ ions (D = $1.5 \times 10^{14} cm^{-2}$, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of $T_{a}$ = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Influence of Temperature on Electrical Parameters of GaAs in the Aspect of Applications in Photovoltaics
Autorzy:: Węgierek, P.
Billewicz, P.
Tematy:: 61.72.uj
61.72.Cc
72.80.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1402217.pdf Link otwiera się w nowym oknie
Opis:: The article describes the results of the research on thermal stability of electrical parameters of n-type gallium arsenide doped with tellurium, defected by ion implantation, measured at the operating temperature ranging from 77 K to 373 K. The aim of the work is to investigate the character of changes in the values of such electrical parameters as resistivity, capacity and loss tangent of the tested GaAs samples, exposed to different thermal conditions. Temperature dependences analyzed in the paper could be taken as a basis to formulate general speculations concerning potential applications of the tested material as a substrate in the process of photovoltaic cells production. The phenomenon of conversion of solar energy into electricity is strongly connected with electrical properties of photovoltaic cell substrate material and its internal structure. Moreover, the efficiency of photoconversion is affected by such factors as charge carrier lifetime distribution and diffusion length in the base material. Therefore, it is necessary to confirm what is the character of the influence of operating temperature on the electrical parameters of GaAs and what modification could be introduced in the material in order to increase the efficiency of photoconversion.
Dostawca treści:: Biblioteka Nauki

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