Temat: 63.22.Gh - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Dispersive Micro Raman Backscattering Spectroscopy Investigation of Arc Discharge Synthesized CNTs Doped by Boron and Nitrogen
Autorzy:: Babanejad, S.
Malekfar, R.
Seyyed Hosseini, S.
Tematy:: 61.46.Fg
63.22.Gh
78.67.Ch
81.07.De; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1807785.pdf Link otwiera się w nowym oknie
Opis:: Raman scattering studies reveal the remarkable structure and the unusual electronic and phonon properties of carbon nanotubes. In this study, we directly produced boron, B, and nitrogen doped carbon nanotubes by using DC-arc discharge method which normally can be employed for producing carbon nanotubes. We performed experiments without using catalysts and in the presence of Ar gas for producing boron doped carbon nanotubes. At the second and third stages and in the presence of $Al_{2}O_{3}$ and MgO nanopowders as catalysts and nitrogen gas were used for producing nitrogen doped carbon nanotubes. In general, our investigation revealed that some major changes caused by B and N dopants can be observed in the related recorded Raman spectra.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Free-Standing Si and Ge, and Ge/Si Core-Shell Semiconductor Nanowires
Autorzy:: Peelaers, H.
Partoens, B.
Peeters, F.
Tematy:: 61.46.Km
61.72.uf
62.23.Hj
63.22.Gh; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1419510.pdf Link otwiera się w nowym oknie
Opis:: The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study
Autorzy:: Tokarczyk, M.
Kowalski, G.
Grodecki, K.
Urban, J.
Strupiński, W.
Tematy:: 61.48.Gh
61.72.Dd
63.22.Rc; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1399073.pdf Link otwiera się w nowym oknie
Opis:: Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as $d_{002}$ interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment
Autorzy:: Tokarczyk, M.
Kowalski, G.
Witowski, A.
Koziński, R.
Librant, K.
Aksienionek, M.
Lipińska, L
Ciepielewski, P.
Tematy:: 61.48.Gh
61.72.Dd
63.22.Rc; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1195411.pdf Link otwiera się w nowym oknie
Opis:: "Graphene paper" prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Different phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specific electric and optical parameters. We have found that process temperatures above 900°C play crucial role in structural and other properties. For the process temperature around 2000°C we found the onset of the graphitization in the samples.
Dostawca treści:: Biblioteka Nauki

Artykuł

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