Temat: 68.55.Bd - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Doping of the Wide-Gap Semiconductor Cd$\text{}_{1-x}$Mg$\text{}_{x}$Te During Molecular Beam Epitaxy
Autorzy:: Fischer, F.
Litz, Th.
Waag, A.
Heinke, H.
Scholl, S.
Gerschütz, J.
Landwehr, G.
Tematy:: 68.55.Bd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1876265.pdf Link otwiera się w nowym oknie
Opis:: We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are considered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg
Autorzy:: Ebel, R.
Spahn, W.
Ress, H. R.
Albert, D.
Schäfer, H.
Ehinger, M.
Faschinger, W.
Landwehr, G.
Tematy:: 68.55.Bd
68.65.+g; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1950745.pdf Link otwiera się w nowym oknie
Opis:: The heterovalent interface ZnSe/GaAs, despite the small lattice misfit, still poses certain problems. The condition of the substrate surface prior to growth start determines the initial growth conditions, which on the other hand are assumed to be responsible for defect densities. Since Zn, in contrast to Se, hardly binds to GaAs the initial surface during growth start is essentially Se terminated. Therefore the binding of Mg to Se terminated GaAs was investigated. The structural quality of 140 nm thick ZnSe layers on different MgSe coverages were compared to conventionally grown and Te initiated ZnSe epilayers of the same thickness.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Surface Geometric Structures of Cu Deposited upon α-Al$\text{}_{2}$O$\text{}_{3}$ (0001)
Autorzy:: Guo, Q.
Møller, P.
Gui, L.
Tematy:: 68.65.+g
68.55.Bd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1920759.pdf Link otwiera się w nowym oknie
Opis:: Upon deposition of Cu on a 1 × 1 α-Al$\text{}_{2}$O$\text{}_{3}$ (0001) surface at room temperature the surface structure was found to change with increasing amounts of Cu deposited, from two-dimensional monolayer islands through three-dimensional nuclei until reaching a thin film. Subsequent surface heat-treatment to 650°C produced a stable Cu(111)-R30° superstructure as observed by LEED.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Magnetic Properties of Molecular Beam Epitaxy Grown High x Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:: Sawicki, M.
De Groot, P. A. J.
Brummell, M. A.
Tomka, G. J.
Ashenford, D. E.
Lunn, B.
Tematy:: 75.50.Rr
68.55.Bd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929744.pdf Link otwiera się w nowym oknie
Opis:: Magnetization measurements performed on molecular beam epitaxy grown Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te structures revealed basically similar magnetic properties of thick epilayers to their bulk counterparts. However, remarkably different properties were detected for a superlattice. These are attributed to a smearing out of the Mn profile in the superlattice.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Physics of GaAs/AlAs Superlattices
Autorzy:: Planel, R.
Mollot, F.
Tematy:: 78.65.Fa
68.55.Bd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1877495.pdf Link otwiera się w nowym oknie
Opis:: We describe the main problems encountered in MBE growth of GaAs/AlAs superlattices and heterostructures. Then, basic features for the understanding of their electronic properties are given, in the envelope-function formalism, and some related optical experiments are reviewed.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Optical Properties of Molecular Beam Epitaxy Grown ZnSe on GaAs
Autorzy:: Karpińska, K.
Suchocki, A.
Godlewski, M.
Hommel, D.
Tematy:: 68.55.Bd
68.55.Ln
78.66.Fd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929648.pdf Link otwiera się w nowym oknie
Opis:: Photoluminescence studies of molecular beam epitaxy grown ZnSe-on-GaAs layers are presented. The high sensitivity of the PL technique allowed for identification unintentional dopants in pure ZnSe sample. Characteristic photoluminescence lines due to extended defects were observed. The experimental results obtained show a correlation between intentional doping level and extended defects concentration. We conclude also that even though molecular beam epitaxy layers are grown at low temperature, the self-compensation mechanism may still be important. For heavily doped sample edge emission is deactivated likely due to efficient energy transfer link with deep donor-acceptor pair bands.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Cubic MnTe - Growth by Molecular Beam Epitaxy and Basic Structural Characterization
Autorzy:: Zakrzewski, A.
Janik, E.
Dynowska, E.
Leszczyński, M.
Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Bąk-Misiuk, J.
Domagała, J.
Kossut, J.
Tematy:: 75.50.Pp
68.55.Bd
68.55.Jk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1873112.pdf Link otwiera się w nowym oknie
Opis:: We report on growth by molecular beam epitaxy of thick layers of MnTe with zinc blende structure. Films as thick as 5.6 µm were obtained. Characterization by X-ray diffraction proved their good structural quality. We determined the lattice constant and its temperature dependence. Broad luminescence due to internal Mn$\text{}^{2+}$- transitions was observed. It showed an unexpected temperature dependence.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Strain Relaxation of ZnTe/CdTe and CdTe/ZnTe heterostructures: In Situ Study
Autorzy:: Riesz, F.
Kret, S.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Tematy:: 61.14.Hg
68.55.Bd
68.65.+g; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1952073.pdf Link otwiera się w nowym oknie
Opis:: The strain relaxation kinetics of ZnTe/CdTe and CdTe/ZnTe heterostructures grown on GaAs substrates by molecular beam epitaxy are studied by in situ reflection high-energy electron diffraction. The observed critical layer thickness is 5 monolayers for ZnTe/CdTe and less than 1 monolayer for CdTe/ZnTe. The relaxation is anisotropic. Dislocation core parameters and relaxation rate constants were determined using a kinetic model and assuming strain-dependent activation energy of dislocation movement.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Molecular Beam Epitaxy of Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb and Al$\text{}_{x}$Ga$\text{}_{1-x}$As: New Donor Doping Sources
Autorzy:: Dobaczewski, L.
Missous, M.
Singer, K. E.
Żytkiewicz, Z. R.
Tematy:: 68.55.Bd
61.50.Cj
71.55.Eq; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929771.pdf Link otwiera się w nowym oknie
Opis:: The first results obtained with the use of Ga$\text{}_{2}$S$\text{}_{3}$ and Ga$\text{}_{2}$Se$\text{}_{3}$ compounds as sources of donor elements for molecular beam epitaxy of Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb (0 ≤ x ≤ 1) and Al$\text{}_{x}$Ga$\text{}_{1-x}$As (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Molecular Beam Epitaxy of II-VI Based Heterostructures
Autorzy:: Kolodziejski, Leslie A.
Gunshor, Robert L.
Nurmikko, Arto V.
Otsuka, Nobuo
Tematy:: 68.55.Bd
78.65.Fa; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1877456.pdf Link otwiera się w nowym oknie
Opis:: The nonequilibrium growth technique of molecular beam epitaxy (MBE) has provided for the fabrication and investigation of a multitude of novel layered heterostructures based on II-VI compound semiconductors. The ability to grow epitaxial metastable magnetic and semimagnetic semiconductors layered with conventional II-VI semiconductors has resulted in structures which, for example, exhibit frustrated antiferromagnetism, and a wide wavelength tunability due to selftrapping of excitons in ZnTe-containing layered structures and due to extremely large (≈ 1 eV) quantum shifts of light emission from MnTe/CdTe superlattice structures. In addition, the control in the stoichiometry of surfaces and the composition of molecular beams used in the MBE growth technique has allowed for the fabrication of very advanced heterostructures which have combined the II-VI and III-V families of compound semiconductors. The work which will be described in the following review represents a very small sampling of the many important results achieved in the field of II-VI based heterostructures. The topics have been selected to illustrate and provide an example of the utility of MBE and the potential of "engineered" II-VI heterostructures and quantum wells.
Dostawca treści:: Biblioteka Nauki

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