Temat: 68.65.-k - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Current-Voltage Characteristics of Nanowires Formed at the $Co-Ge_{99.99}Ga_{0.01}$ Interface
Autorzy:: Wawrzyniak, M.
Maćkowski, M.
Śniadecki, Z.
Idzikowski, B.
Martinek, J.
Tematy:: 68.65.-k
79.60.Jv
73.63.Rt; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1537104.pdf Link otwiera się w nowym oknie
Opis:: We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the $Co-Ge_{99.99}Ga_{0.01}$ interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and $Ge_{99.99}Ga_{0.01}$. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Structure and Energetics of Fragments of the Planar α and β Boron Sheets
Autorzy:: Gonzalez Szwacki, N.
Tarkowski, T.
Majewski, J.
Tematy:: 61.46.-w
68.65.-k
73.22.-f; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1398547.pdf Link otwiera się w nowym oknie
Opis:: Large scale first principles calculations based on density functional theory and using hybrid exchange-correlation functionals have been performed in order to study the structural properties and the relative stability of fragments of the planar α and β boron sheets. Based on the considered structures, we show that, in contrast to the fragments of the α -sheet, all the fragments of the β -sheet, having more than ≈30 atoms, are fully planar regardless of their shape. We conclude that the β -sheet is the only planar boron sheet reported so far that retains planarity even if it is reduced to relatively small fragments.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
Autorzy:: Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A.
Tematy:: 78.55.-m
71.35.-y
68.65.-k; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1505529.pdf Link otwiera się w nowym oknie
Opis:: We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface
Autorzy:: Klimko, G.
Evropeytsev, E.
Sitnikova, A.
Gronin, S.
Sedova, I.
Sorokin, S.
Ivanov, S.
Tematy:: 78.66.-w
68.65.-k
81.15.Hi; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1376199.pdf Link otwiera się w nowym oknie
Opis:: The studies of structural and optical properties of molecular beam epitaxy grown pseudomorphic hybrid structures with AlGaAs/GaAs quantum well placed closely to the GaAs/ZnSe heterointerface are presented. The interfaces were formed in different ways (Zn or Se initial GaAs surface exposure, different growth temperature and ZnSe growth mode) on As-rich c(4×4) and (2×4) GaAs surfaces. It has been demonstrated that the photoluminescence intensity from the near-heterointerface GaAs QW is influenced most significantly by the procedure of ZnSe growth initiation. The bright photoluminescence (77 K) from the near-interface GaAs quantum well is observed if the Se-decoration procedure is used during the GaAs/ZnSe heterointerface formation on (2×4)As GaAs surface. It reduces noticeably if the GaAs reconstruction changes to c(4×4)As and disappears completely when Zn pre-exposure of GaAs surface is used. These effects are discussed in terms of different ratio of Ga-Se and As-Zn bonds at the GaAs/ZnSe heterointerface resulting in different band offsets and/or uncompensated built-in electric fields.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
Autorzy:: Zhuang, H.
Li, B.
Zhang, S.
Zhang, X.
Xue, Ch.
Wang, D.
Shen, J.
Tematy:: 68.65.-k
81.05.Ea
81.15.Cd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1813498.pdf Link otwiera się w nowym oknie
Opis:: High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Ground-State Configurations of 2D Clusters of Classical Charged Particles
Autorzy:: Sobczak, P.
Kamieniarz, G.
Tematy:: 68.65.-k
45.05.+x
52.27.Lw; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1813816.pdf Link otwiera się w nowym oknie
Opis:: The ground-state configurations of the classical point-charge particles were calculated using a new genetic-algorithm-based approach. The structures obtained confirmed the recent Monte Carlo findings, including the metastable states.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 7.

Tytuł:: Correlation Histograms in Conductance Measurements of Nanowires Formed at Semiconductor Interfaces
Autorzy:: Wawrzyniak, M.
Martinek, J.
Susła, B.
Ilnicki, G.
Tematy:: 68.65.-k
79.60.Jv
73.63.Rt; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1810603.pdf Link otwiera się w nowym oknie
Opis:: We demonstrate experimentally that conductance steps can occur in nanowires formed at metal-semiconductor junctions, between a cobalt tip and a germanium surface revealing long-duration plateaus at reproducible levels. The high reproducibility of the conductance traces obtained leads to very sharp peaks in the conductance histogram suggesting formation of stable atomic configurations. We develop a new type of correlation analysis of the preferred conductance values that provide new type of information on a few-atomic-nanocontact formation dynamics.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Growth of β-$Ga_2O_3$ Nanorods and Photoluminescence Properties
Autorzy:: Zhang,, S.
Zhuang, H.
Xue, C.
Li, B.
Shen, J.
Wang, D.
Tematy:: 68.65.-k
79.60.Jv
81.15.Cd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1814023.pdf Link otwiera się w nowym oknie
Opis:: β-$Ga_2O_3$ nanorods were successfully fabricated through annealing $Ga_2O_3$/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline $Ga_2O_3$ with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-$Ga_2O_3$ single crystal. The growth process of the β-$Ga_2O_3$ nanorods is probably dominated by conventional vapor-solid mechanism.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: Metrological Applications of X-ray Waveguide Thin Film Structures in X-ray Reflectometry and Diffraction
Autorzy:: Pełka, J. B.
Lagomarsino, S.
Tematy:: 68.65.-k
61.10.Kw
06.30.Bp; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2035489.pdf Link otwiera się w nowym oknie
Opis:: The effect of resonance, observed in X-ray waveguide layered structures in a characteristic way influences the scattering properties of the films. It is well known that in the resonant region the reflectivity shows a series of minima, usually very deep and extremely narrow. The positions and depths of the minima depend only on X-ray waveguide structural properties, on the X-ray wavelength and on the incident beam divergence. In the present work we propose and discuss the application of the X-ray waveguide and quasi X-ray waveguide film structures as tools to experimental evaluation of some quantities related to X-ray reflectometric or diffractometric measurements, like the beam divergence, wavelength, or angular distance. Examples of application of the X-ray waveguide as an excellent tool to estimate the effective beam divergence are shown. Properties of the X-ray waveguide elements as a handy wavelength or angular calibration standard are also mentioned.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Structure and Charge Compensation of Heteropolar SiC/GaN Interfaces
Autorzy:: Sznajder, M.
Majewski, J.
Tematy:: 68.35.-p
68.35.Ct
68.47.Fg
68.65.-k; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1399077.pdf Link otwiera się w nowym oknie
Opis:: We present studies of the morphology and charge distribution at the 4H-SiC/wz-GaN heteropolar junctions. Our investigations are based on the first principles calculations in the framework of the density functional theory where the interfaces between the SiC substrate and GaN layers are represented by means of a slab. These studies reveal possible charge compensation patterns at the interfaces that lead to charge redistribution from monopole to dipole character and increase the stability of the junctions. It turns out that the interfaces with C-Ga and Si-Ga bonds across the junction and reconstructions involving substitution of group IV elements into Ga layer are the most favorable energetically.
Dostawca treści:: Biblioteka Nauki

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