Temat: 71.20.Nr - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Electronic Structure of Some Wurtzite Semiconductors: Hybrid Functionals vs. Ab Initio Many Body Calculations
Autorzy:: Kaczkowski, J.
Tematy:: 71.15.Mb
71.20.-b
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1427431.pdf Link otwiera się w nowym oknie
Opis:: Using the first-principles projector augmented wave method, the structural and electronic properties of wurtzite crystals, AlN, GaN, InN and ZnO have been calculated. Different exchange-correlation approximations: LDA, LDA+U, GGA, GGA+U and hybrid Heyd-Scuseria-Ernzerhof method were used. We also present the values of band gap calculated within different GW approximations ($G_0W_0,$ $GW_0,$ $GW$ and $U+G_0W_0,$ the last one for materials with shallow d states). In case of structural parameters the best agreement with experiment was obtained for hybrid Heyd-Scuseria-Ernzerhof functional and in case of band gap the best agreement was for $GW$ and $U+G_0W_0$ approximation.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
Autorzy:: Kowalski, B. J.
Guziewicz, E.
Kopalko, K.
Orłowski, B. A.
Janik, E.
Wojtowicz, T.
Johnson, R. L.
Tematy:: 71.20.Nr
79.60.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1991616.pdf Link otwiera się w nowym oknie
Opis:: Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
Autorzy:: Nadolny, A. J.
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Johnson, R.
Tematy:: 79.60.-i
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1992049.pdf Link otwiera się w nowym oknie
Opis:: The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Valency of Yb in PbS and PbTe Determined by XPS
Autorzy:: Gołacki, Z.
Heinonen, M.
Tematy:: 71.20.Nr
79.60.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1963377.pdf Link otwiera się w nowym oknie
Opis:: X-ray photoelectron spectroscopy experiments on PbTe:Yb, PbS:Yb, PbTe, and PbS crystals have been performed using the monochromatized Al K$\text{}_{α}$ radiation. The valence band spectrum of PbTe:Yb exhibits one set of peaks associated with divalent Yb initial states, but two sets associated with divalent and trivalent Yb are observed for PbS:Yb. The valency of Yb in PbTe:Yb is 2 (within an accuracy of the experiment) but in PbS:Yb the mixed valency of Yb is seen. These conclusions are confirmed by an analysis of Yb 4d spectra in PbTe:Yb and PbS:Yb crystals.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique
Autorzy:: Gelczuk, L.
Dąbrowska-Szata, M.
Jóźwiak, G.
Radziewicz, D.
Tematy:: 71.55.-i
71.55.Eq
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2038268.pdf Link otwiera się w nowym oknie
Opis:: Two deep traps associated with lattice-mismatch induced defects in n-type In$\text{}_{0.042}$Ga$\text{}_{0.958}$As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Electron-deformational phase transitions in a TlGaSe₂ layered crystal
Autorzy:: Kharkhalis, L.
Glukhov, K.
Sznajder, M.
Tematy:: 71.15.Mb
71.20.Nr
71.38.-k; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1157770.pdf Link otwiera się w nowym oknie
Opis:: We investigate the self-consistent localized electron states which are related to charge carrier inhomogeneities in a TlGaSe₂ crystal, in the framework of the continuum and the deformational potential approaches. For this purpose a nonstandard dispersion law for charge carriers following from the ab initio band structure calculation of the considered crystal is utilized. It is shown that a formation of stable localized electron states with different bond energy, which are separated by the potential barrier, takes place. These states can be responsible for the occurrence of the deformational phase transition in the presence of the non-equilibrium charge carriers in TlGaSe₂.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Morphology and Magnetic Coupling in ZnO:Co and ZnO:Ni Co-Doped with Li
Autorzy:: Persson, C.
Jayakumar, O.
Sudakar, C.
Sudarsan, V.
Tyagi, A.
Tematy:: 71.20.Nr
71.55.Gs
75.50.-y; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1505447.pdf Link otwiera się w nowym oknie
Opis:: $Zn_{0.95}Co_{0.05}O$ and $Zn_{0.97}Ni_{0.03}O$ nanorods, prepared by a solvothermal method, show intriguing morphology and magnetic properties when co-doped with Li. At low and moderate Li incorporation (below 10 and 3 at.% Li in the Co- and Ni-doped samples, respectively) the rod aspect ratio is increased and room temperature ferromagnetic properties are enhanced, whereas the ferromagnetic coupling in $Zn_{0.97}Ni_{0.03}O$ is decreased for Li concentrations < 3 at.%. First-principles theoretical analyses demonstrate that Li co-doping has primarily two effects in bulk $Zn_{1- x}M_{x}O$ (with M = Co or Ni). First, the Li-on-Zn acceptors increase the local magnetic moment by depopulating the M 3d minority spin-states. The magnetic coupling is Ruderman-Kittel-Kasuya-Yosida-like both without and with Li co-doping. Second, Li-on-Zn prefer to be close to the M atoms to compensate the M-O bonds and to locally depopulate the 3d states, and this will help forming high aspect nanostructures. The observed room temperature ferromagnetism in Li co-doped $Zn_{1- x}M_{x}O$ nanorods can therefore be explained by the better rod morphology in combination with ionizing the magnetic M atoms.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Parameters of an Unique Condenson State in the Structure of the rm $In_4$ $Se_3$ Crystal
Autorzy:: Sznajder, M.
Lim, Y.
Glukhov, K.
Kharkhalis, L.
Bercha, D.
Tematy:: 71.15.Mb
71.20.-b
71.20.Nr
71.38.-k; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1410037.pdf Link otwiera się w nowym oknie
Opis:: Based upon the ab initio band structure calculations results the dispersion law parameters of charge carriers of the orthorhombic $In_4$ $Se_3$ semiconductor as well as of its Sn- and Te-doped compounds were calculated. This allowed to estimate parameters of the electron condenson states in those compounds.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: First-Principles Investigation of Structural and Electronic Properties of the $B_{x}Ga_{1-x}N,$ $B_{x}Al_{1-x}N, Al_{x}Ga_{1-x}N$ and $B_{x}Al_{y}Ga_{1-x-y}N$ Compounds
Autorzy:: Djoudi, L.
Lachebi, A.
Merabet, B.
Abid, H.
Tematy:: 71.15.Mb
71.20.-b
71.20.Nr
71.55.Eq; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1418321.pdf Link otwiera się w nowym oknie
Opis:: The structural and electronic properties of the $B_{x}Ga_{1-x}N, B_{x}Al_{1-x}N,$ $Al_{x}Ga_{1-x}N$ and $B_{x}Al_{y}Ga_{1-x-y}N$ compounds were studied using the full-potential linearized augmented plane wave method, within the generalized gradient approximation. We have compared the Al and B compositions dependence on the ground state properties: lattice parameters, bulk moduli and their pressure derivative, and band gap energies. The lattice parameters are found to change linearly for $Al_{x}Ga_{1-x}N,$ exhibit a downward bowing for both $B_{x}Al_{1-x}N$ and $B_{x}Ga_{1-x}N,$ and has a very small deviation when Al is added and a large deviation when B is incorporated for $B_{x}Al_{y}Ga_{1-x-y}N$. The calculated band gap variation for the ternaries shows that the $B_{x}Ga_{1-x}N$ has a phase transition from direct-gap to indirect-gap for high boron contents (x > 0.75). As for $B_{x}Al_{1-x}N$, a direct-gap is found in the boron content range 0.07 < x < 0.83. For $Al_{x}Ga_{1-x}N$ and $B_{x}Al_{y}Ga_{1-x-y}N$ compounds, they have been found to be direct-gap materials. The results show that the $B_{x}Ga_{1-x}N,$ $B_{x}Al_{1-x}N,$ $Al_{x}Ga_{1-x}N$ and $B_{x}Al_{y}Ga_{1-x-y}N$ materials may well be useful for optoelectronic applications.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Measurement of Very Small Zeeman Splittings in GaN:Mn,Mg by Faraday Rotation
Autorzy:: Wołoś, A.
Kossacki, P.
Golnik, A.
Kamińska, M.
Gaj, J. A.
Twardowski, A.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Tematy:: 78.20.Ls
71.70.Ej
71.55.Eq
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2035615.pdf Link otwiera się w nowym oknie
Opis:: In this work we demonstrate an application of Faraday rotation for measuring an extremely small Zeeman splitting of an Mn related absorption line placed at 1.417 eV in optical absorption spectrum of Mn and Mg doped gallium nitride. Analysis of the collected spectra allowed us to determine the value of the splitting as equal to 0.12±0.01 meV at 6 T. This data should help in establishing the nature of the observed absorption band.
Dostawca treści:: Biblioteka Nauki

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