Temat: 71.55.-i - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN
Autorzy:: Boguslawski, P.
Bernholc, J.
Tematy:: 71.55.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1948168.pdf Link otwiera się w nowym oknie
Opis:: Electronic structure of substitutional group-IV impurities C, Si, and Ge in hexagonal GaN and AlN were studied by quantum molecular dynamics. C$\text{}_{N}$ is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. Electronic structure of nearest-neighbor X$\text{}_{cation}$-X$\text{}_{N}$ pairs is also discussed.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: On DLTS Experiments with Extended Defects
Autorzy:: Szkiełko, Wiktor
Tematy:: 71.55.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1886496.pdf Link otwiera się w nowym oknie
Opis:: It is shown that the line shape of DLTS spectra measured in silicon with a high concentration of extended defects can be consistently explained if the both processes, thermal emission and tunneling of majority carriers from charged defects, are taken into account.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 3.

Tytuł:: Pressure-Dependent Coupling of the $\text{}^{3}$A$\text{}_{2}$(F) and $\text{}^{1}$T$\text{}_{2}$(D) States of Ni$\text{}^{2+}$ in ZnS and ZnSe
Autorzy:: Wasik, D.
Baj, M.
Liro, Z.
Tematy:: 71.55.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1886737.pdf Link otwiera się w nowym oknie
Opis:: We have investigated two close-lying $\text{}^{3}$A$\text{}_{2}$(F) and $\text{}^{1}$T$\text{}_{2}$(D) states of Ni$\text{}^{2+}$ impurity in ZnS and ZnSe. These states are strongly coupled to each other via the spin-orbit interaction and therefore, small variations of their energies induced by pressure have significantly changed absorption spectra related to them. In order to give a good interpretation to the experimental results we took into account the interaction between both states, their coupling to the lattice vibrations and the pressure-dependent separation between them.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 4.

Tytuł:: Deep Levels in Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te:Ga
Autorzy:: Szatkowski, J.
Płaczek-Popko, E.
Sierański, K.
Bieg, B.
Tematy:: 71.55.-i
71.55.Gs; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1992339.pdf Link otwiera się w nowym oknie
Opis:: Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 5.

Tytuł:: Binding Energy of an Off-Center Hydrogenic Donor Impurity in a Finite Confining Potential Quantum Well
Autorzy:: Mikhail, I. F. I.
Ismail, I. M. M.
Tematy:: 71.15.-m
71.55.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2047296.pdf Link otwiera się w nowym oknie
Opis:: The binding energy of an off-center hydrogenic donor impurity in a finite confining potential quantum well was calculated by using a variational method of the Bastard type. New analytical expressions for the binding energy and for the initial deviation from the result of an infinite confining potential well were derived for the ground energy state. The sign of the initial deviation was found to depend on the location of the impurity. The analytical expressions were utilized further to derive some other important parameters.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique
Autorzy:: Gelczuk, L.
Dąbrowska-Szata, M.
Jóźwiak, G.
Radziewicz, D.
Tematy:: 71.55.-i
71.55.Eq
71.20.Nr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2038268.pdf Link otwiera się w nowym oknie
Opis:: Two deep traps associated with lattice-mismatch induced defects in n-type In$\text{}_{0.042}$Ga$\text{}_{0.958}$As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 7.

Tytuł:: Mn Impurity in GaN Studied by Electron Paramagnetic Resonance
Autorzy:: Wołoś, A.
Palczewska, M.
Wilamowski, Z.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Porowski, S.
Tematy:: 71.55.-i
71.55.Eq
71.70.Gm; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2036027.pdf Link otwiera się w nowym oknie
Opis:: We present the results of electron paramagnetic resonance investigations of GaN bulk crystals doped with Mn. The EPR experiment shows the Mn$\text{}^{2+}$ resonance in all the investigated n-type crystals, while in highly resistive samples extra doped with Mg acceptor the Mn$\text{}^{2+}$ resonance decreases. This is a consequence of the location of Mn acceptor level in GaN band gap. The analysis of the spin relaxation times reveals the Korringa scattering as the dominating spin relaxation mechanism in n-type GaN:Mn crystals. The effective exchange constant determined from spin relaxation rate temperature dependence is of the order of 14 meV.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Magneto-Luminescence Study of Silicon-Vacancy in 6HSi
Autorzy:: Wysmołek, A.
Wardak, K.
Stępniewski, R.
Baranowski, J.
Potemski, M.
Tymicki, E.
Grasza, K.
Tematy:: 78.55.Hx
71.55.-i
71.55.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2047066.pdf Link otwiera się w nowym oknie
Opis:: The magneto-spectroscopy studies of luminescence related to silicon-vacancy, in high quality 6H-SiC crystals grown by the seeded physical vapor transport method, are presented. The superior optical quality of these crystals allowed us to resolve a doublet structure of the 1.398 eV emission line (V$\text{}_{2}$ line), commonly assigned to the transitions involving two singlet states of the silicon-vacancy. Experiments performed in magnetic fields up to 20 T showed that each doublet constituent of the V$\text{}_{2}$ line splits into four components for the magnetic field parallel to the c-axis of the 6H-SiC crystals. This result could be hardly explained in terms of a singlet to singlet transition. The analysis of the angle-resolved luminescence experiments in high magnetic fields serves us to discuss the symmetry of the defect states responsible for the V$\text{}_{2}$-line in silicon carbide.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 9.

Tytuł:: DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing
Autorzy:: Gelczuk, Ł.
Dąbrowska-Szata, M.
Pucicki, D.
Tematy:: 71.55.Eq
71.55.-i
73.61.Ey; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1195373.pdf Link otwiera się w nowym oknie
Opis:: Deep level transient spectroscopy was used to investigate deep-level defects in (Ga,In)(N,As)/GaAs triple quantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy with different indium and nitrogen contents and annealed in rapid thermal annealing system. A combination of electron traps that disappear or remain on annealing and a new hole trap that appears on annealing were detected. The revealed electron traps were attributed to N-related complexes or GaAs host-related native point defects. Moreover, it was suggested that the new hole trap observed in the annealed GaAsN/GaAs triple quantum well structure together with the dominant electron trap can act as generation-recombination center responsible for the observed a very poor optical quality among all the investigated multi-quantum well structures.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 10.

Tytuł:: Photoluminescence Study of Bulk GaN Doped with Beryllium
Autorzy:: Jaworek, M.
Wysmołek, A.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Tematy:: 78.55.Cr
71.55.-i
71.35.-y; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2043722.pdf Link otwiera się w nowym oknie
Opis:: Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
Dostawca treści:: Biblioteka Nauki

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