Temat: 72.10.Fk - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Bulk and Epitaxial $Co_2MnSi$ Systems with Antisite Disorder: Ab Initio Calculations
Autorzy:: Carva, K.
Turek, I.
Tematy:: 72.25.-b
72.10.Fk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1813602.pdf Link otwiera się w nowym oknie
Opis:: The intermetallic compound $Co_2MnSi$ is halfmetallic, but the structure of real samples is often affected by antisite disorder. The influence of disorder on transport properties is examined by ab initio calculations and is found to be more significant in thin $Co_2MnSi$ slabs sandwiched by metallic leads than in the bulk compound.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 2.

Tytuł:: Interplay of Quantum Size Effect and Surface Electron Scattering in Conductivity of Thin Films
Autorzy:: Makarov, N. M.
Moroz, A. V.
Tematy:: 73.50.Bk
72.10.Fk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1964813.pdf Link otwiera się w nowym oknie
Opis:: We constructed the most general theory of the classical and quantum static electron transport for 3D films with randomly rough boundaries. The electron-surface interaction was included via approximation with mildly sloping asperities, when the rms height ξ of boundary defects is less than their mean length L. Then we analyzed influence of spatial quantization and electron-surface scattering on the film conductivity ⟨σ⟩ and their interference. Joint action of those factors leads to peculiarities (sharp dips) of ⟨σ⟩ versus the sample thickness d appearing at points where a new conducting electron channel opens. The dips have fundamental quantum origin and are caused by size quantization of electron-surface scattering rate. When studying ⟨σ⟩ versus the bulk mean free path l of electrons, we revealed that, as bulk collisions vanish (l → ∞), the quantum conductivity approaches finite residual value associated with electron-surface interaction. The residual conductivity was first shown to possess either quantum or exclusively classical origin depending on d, l, and the electron wavelength. On the basis of the investigations provided, the relation between quantum and classical effects in the film conductivity was clarified. The theoretical results were successfully tested against recent experimental data concerning the conductivity of ultrathin films.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 3.

Tytuł:: Carrier Heating Efficiency in Optically Detected Cyclotron Resonance Experiment
Autorzy:: Dedulewicz, S.
Godlewski, M.
Tematy:: 78.70.Gq
72.10.Di
72.10.Fk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929627.pdf Link otwiera się w nowym oknie
Opis:: Monte Carlo calculations of carrier heating efficiency in optically detected cyclotron resonance experiment are presented. It is shown that electrons accelerated by microwave electric field gain energy sufficient for impact ionization of shallow centers and for exciton dissociation. It is also explained why very sharp thresholds for impact processes were observed in the optically detected cyclotron resonance investigations.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 4.

Tytuł:: Peculiarities of Electron Transport in PbTe:Cr due to Presence of Resonant Impurity State
Autorzy:: Grodzicka, E.
Dobrowolski, W.
Kossut, J.
Story, T.
Witkowska, B.
Tematy:: 72.20.Fr
72.10.Fk
72.80.Jc; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929686.pdf Link otwiera się w nowym oknie
Opis:: The results of transport investigation of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.009) in temperature range 3.5-300 K are presented. The obtained electron concentration and electron mobility vs. temperature and Cr concentration data are interpreted and discussed within the model assuming that Cr in PbTe forms a donor state resonant with the conduction band.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 5.

Tytuł:: Transport Properties of Rippled Graphene
Autorzy:: Zwierzycki, M.
Tematy:: 81.05.ue
72.10.Fk
72.80.Vp; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1428651.pdf Link otwiera się w nowym oknie
Opis:: It is common to describe graphene as ideally flat plane, however there exists both theoretical and experimental evidence that it is most usual to find it in a rippled state. The ripples can be either induced by the substrate or formed spontaneously in suspended graphene. The lateral size of such features ranges between several and tens of nanometers with the height of up to 1 nm. It has been suggested that the presence of ripples could be one of the factors ultimately limiting mobility of carriers and that it may be also responsible, by introducing an effective gauge field, for the lack of weak localization observed in certain graphene samples. In the present contribution the transport properties of the rippled graphene are studied theoretically starting with the simple case of one-dimensional modulation. Using either single-band or the full $sp^3$ tight-binding Hamiltonians we compare and discuss the importance of two ripple-related mechanisms of scattering: the variation of interatomic distances and hybridization between π and σ bands of graphene.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 6.

Tytuł:: Graphene Conductance in the Presence of Resonant Impurities
Autorzy:: Inglot, M.
Dugaev, V.
Tematy:: 72.10.Fk
72.80.Vp
73.20.Hb; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1402560.pdf Link otwiera się w nowym oknie
Opis:: We discuss transport properties of graphene related to the resonant scattering from impurities and defects. Two different models describing defects in the bulk of graphene or at the graphene surface are used for the calculation of self energy of electrons scattered from short-range impurities or defects. The results of numerical calculations demonstrate a resonant character of resistance. In the case of neutral impurities or defects the scattering also leads to a resonant decrease of the spin relaxation time.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 7.

Tytuł:: Spin-Dependent Transport through Metallic System with Magnetic Impurities
Autorzy:: Spisak, B.
Wołoszyn, M.
Paja, A.
Tematy:: 72.10.Fk
72.25.Ba
73.63.Nm; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1810518.pdf Link otwiera się w nowym oknie
Opis:: The problem of spin-dependent transport of electrons through a metallic nanostructure is considered. The system consists of non-magnetic metal wire with two magnetic impurities and is connected to two ferromagnetic leads. The differential conductance is calculated by using the transfer matrix method. The spin polarization of the conductance is also obtained. It was found that this polarization is dependent on the spin configuration of magnetic impurities. This dependence can be controlled by the applied bias voltage.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 8.

Tytuł:: Impurity Self-Screening
Autorzy:: Wilamowski, Z.
Przybylińska, H.
Tematy:: 71.45.-d
72.10.Fk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929774.pdf Link otwiera się w nowym oknie
Opis:: In a mixed valence impurity system the distribution of impurity charges can be adjusted to minimize the Coulomb energy of inter-impurity interactions. In this paper we discuss the possibility of extending the methods of analytical evaluation of the pair correlation function for classical liquids to apply to a system with a built-in disorder, where the occupation probability is governed by the Fermi-Dirac statistics.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 9.

Tytuł:: Determination of Inelastic Mean Free Path of Electrons in Noble Metals
Autorzy:: Doliński, W.
Mróz, S.
Palczyński, J.
Gruzza, B.
Bondot, P.
Porte, A.
Tematy:: 72.10.Fk
79.20.Fv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1892437.pdf Link otwiera się w nowym oknie
Opis:: The experimental values of Inelastic Mean Free Path (λ$\text{}_{IMFP}$) of electrons in noble metals (Ag, Au, Cu) are determined in the electron energy range 150-2000 eV. The method used consists of the measurements and theoretical calculations of the coefficient of elastic backscattering of electrons from a solid surface η$\text{}_{e}$. The obtained values of λ$\text{}_{IMFP}$ are compared with the data available in the literature.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 10.

Tytuł:: Vertex Corrections to the Electrical Conductivity of the Disordered Falicov-Kimball Model
Autorzy:: Pokorný, V.
Janiš, V.
Tematy:: 71.10.Fd
71.28.+d
72.10.Fk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1534607.pdf Link otwiera się w nowym oknie
Opis:: Quantum coherence of elastically scattered lattice fermions is studied. We calculate vertex corrections to the electrical conductivity of electrons scattered either on thermally equilibrated or statically distributed random impurities and we demonstrate that the sign of the vertex corrections to the Drude conductivity is in both cases negative.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Informacja

Wyszukujesz frazę "72.10.Fk" wg kryterium: Temat