Temat: 72.20.Ht - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Hot-Electron Effects in High-Resistivity InSb
Autorzy:: Ašmontas, S.
Subačius, L.
Valušis, G.
Tematy:: 72.20.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929737.pdf Link otwiera się w nowym oknie
Opis:: We report that in the presence of random potential of the conduction band hot-electron transport can exhibit some novel features, some of which can be observed in dependencies of electric conductivity, mean electron energy and noise temperature on electric field strength.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
Autorzy:: Zduniak, A.
Łusakowski, J.
Nowak, G.
Tematy:: 72.20.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1923732.pdf Link otwiera się w nowym oknie
Opis:: Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10$\text{}^{-13}$ cm$\text{}^{2}$ which agrees with literature data.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Electron-Electron Scattering Influence on Hot Electron Transport in Semiconductors
Autorzy:: Dedulewicz, S.
Kancleris, Ž.
Tematy:: 72.20.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1890875.pdf Link otwiera się w nowym oknie
Opis:: Electron-electron scattering has been shown to manifest itself when scattering by optical phonons is of importance. The strongest influence has been observed in the slightly heated electron system at the lattice temperature T ≈ T$\text{}_{0}$/5 (T$\text{}_{0}$ being the characteristic temperature of optical phonon).
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Nonlinear Coupling of Oscillatory Modes in Current Flow in Semi-Insulating GaAs
Autorzy:: Karpińska, K.
Łusakowski, J.
Tematy:: 72.20.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1891273.pdf Link otwiera się w nowym oknie
Opis:: Spontaneous current oscillations in semi-insulating (SI) GaAs sample caused by high electric field domains nucleation were perturbed by modulated illumination. Coupling between domain and photocurrent oscillations leads to quasiperiodic and frequency-locked behaviour. The observed Arnol'd tongues structure follows the Farey tree ordering and agrees with predictions of the circle map theory. We also suggest a possible mechanism responsible for the coupling of the modes.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Corner Dissipation in Quantum Hall Systems
Autorzy:: Riess, J.
Magyar, P.
Tematy:: 72.15.Lh
72.20.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929622.pdf Link otwiera się w nowym oknie
Opis:: A description of the onset of dissipation in the integer quantum Hall effect is given, where the electric field across the sample is expressed through a time dependent vector potential. This brings the essentially time dependent, non-stationary nature of the problem into focus. The electric field induces transitions between the levels of the disorder broadened Landau band. Above a critical electric field the particles are driven upwards in energy space beyond the Fermi level, which leads to dissipation since the accumulated energy is lost to the heat bath after τ$\text{}_{in}$, the time between two inelastic events. Thus the dissipated power is obtained without the use of the traditional (linear response) transport formulae. As an application we investigate the dissipation in the corner region of a Hall bar. The results are in reasonable accordance with recent experiments exploiting the fountain pressure effect.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Small and Large Signal Analysis of Terahertz Generation from InN n$\text{}^{+}$nn$\text{}^{+}$ Structures with Free-Carrier Grating
Autorzy:: Gružinskis, V.
Shiktorov, P.
Starikov, E.
Tematy:: 72.20.Ht
72.30.+q; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2041674.pdf Link otwiera się w nowym oknie
Opis:: Electron transport in long (up to 15μm) InN n$\text{}^{+}$nn$\text{}^{+}$ structures is theoretically investigated by the Monte Carlo particle technique at low lattice temperatures when optical phonon emission is the dominating scattering mechanism. It is shown that at constant bias a free-carrier grating can be formed inside the n-region. Such a grating is found to be responsible for microwave power generation in the THz frequency range. The generation mechanism is similar to that in submicron n$\text{}^{+}$nn$\text{}^{+}$ structures under quasiballistic transport conditions.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Small-Signal Characterization of FET/HEMT for Terahertz Applications
Autorzy:: Starikov, E.
Shiktorov, P.
Gružinskis, V.
Marinchio, H.
Nouvel, P.
Torres, J.
Palermo, C.
Chusseau, L.
Varani, L.
Ziadé, P.
Tematy:: 72.20.Ht
72.30.+q; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1505675.pdf Link otwiera się w nowym oknie
Opis:: Calculations of the small-signal response of InGaAs HEMTs by using the hydrodynamic approach coupled with a pseudo-2D Poisson equation are performed. The spectra of small-signal admittance and impedance are found to demonstrate series of the resonant peaks corresponding to excitation of plasma waves. Possibilities and conditions of instability onset and THz signal detection are discussed.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Modeling of THz-Electro-Optical Sampling Measurements
Autorzy:: Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Tematy:: 72.20.Ht
72.30.+q; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1813215.pdf Link otwiera się w nowym oknie
Opis:: We carry out a theoretical analysis of THz-electro-optical sampling experimental technique applied to semiconductor structures. The difficulties/impossibility of determining the small-signal conductivity spectrum in the framework of such a technique are analyzed and discussed.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Non-Activated Conductivity of Hot Electrons in Localization Regime
Autorzy:: Łuskowski, J.
Grynberg, M.
Tematy:: 72.20.Ht
72.20.My; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1932092.pdf Link otwiera się w nowym oknie
Opis:: Temperature (T) dependence of conductivity (σ) was studied in semi-insulating GaAs as a function of the magnetic field (B) for 1.8 K < T < 40 K for high electric fields. An infrared illumination of a sample and application of an electric field caused a non-equilibrium distribution of electrons in the conduction band. An increase in B caused a localization transition which manifested itself by a gradual disappearance of the impact ionization of shallow bound states. The transition was connected with a change from a non-activated to an activated conductivity only if T > 4 K, otherwise σ showed only a non-activated character. It is proposed that for T < 4 K the electron distribution function is mostly determined by optical and electric field excitations, which results in a non-activated conductivity. For T > 4 K thermal excitations become dominant which leads to an activated character of σ.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields
Autorzy:: Łusakowski, J.
Grynberg, M.
Huant, S.
Tematy:: 72.20.Hy
72.20.Ht; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1876263.pdf Link otwiera się w nowym oknie
Opis:: Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
Dostawca treści:: Biblioteka Nauki

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