Temat: 72.20.Jv - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: On the Pinning of the Fermi Level by Germanium A$\text{}_{1}^{0}\text{}^{/}\text{}^{+}$ Deep Donor State in GaAs Codoped with Ge and Te
Autorzy:: Słupiński, T.
Nowak, G.
Przybytek, J.
Stępniewski, R.
Tematy:: 72.20.Jv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1929765.pdf Link otwiera się w nowym oknie
Opis:: We present the possibility of GaAs:Ge,Te crystals growth from the melt (liquid encapsulated Czochralski method) with partially occupied, at ambient pressure, the A$\text{}_{1}$ localized electronic state of Ge$\text{}_{Ga}$ impurity. In as-grown crystals the amphotericity of Ge and creation of defects (deep acceptor complexes, precipitates etc.) during cooling after growth limit the free electron concentration below the value necessary to populate the A$\text{}_{1}^{0}\text{}^{/}\text{}^{+}$ level. Special annealing of the samples, which enlarges the free electron concentration, was used. The occupation of A$\text{}_{1}^{0}\text{}^{/}\text{}^{+}$ level, at ambient pressure, was observed by pressure dependent Hall effect measurements.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Conductivity Effects in Bi₂TeO₅ Single Crystals
Autorzy:: Agarkov, K.
Sadovskaya, L.
Tematy:: 72.20.Jv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1031021.pdf Link otwiera się w nowym oknie
Opis:: The current-voltage characteristics (I-V) of non-stoichiometric bismuth tellurite crystals were studied in a range of temperatures from 150°C to 350°C and fields up to 2.5 kV/cm with asymmetric contacts (In-Ga eutectic and Na₂SiO₃). The I-V curves and observed monopolar injection are described by the approximation of space charge limited currents. In the composition of 47% Bi₂O₃-53% TeO₂ electronic conduction is prevailed. In the composition 43% Bi₂O₃-57% TeO₂ the conductivity is contributed by electrons and holes. The spectrum of local states in the band gap of the studied crystals is quasicontinuous, which cannot be described by models of a discrete or exponential distribution.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 3.

Tytuł:: Monte Carlo Estimation of the Efficiency of the Three Center Auger Effect
Autorzy:: Żakrzewski, A.
Tematy:: 72.20.Jv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1924237.pdf Link otwiera się w nowym oknie
Opis:: In this communication the effect of impurity quenching of the photoluminescence of ZnS crystals is discussed. An appropriate mechanism of non- radiative recombination is proposed and its efficiency is estimated.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 4.

Tytuł:: Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect
Autorzy:: Karpińska, K.
Łusakowski, J.
Tematy:: 72.20.Jv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1886537.pdf Link otwiera się w nowym oknie
Opis:: A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 10$\text{}^{7}$ Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage V$\text{}_{th}$ which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of V$\text{}_{th}$ increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Optical Nonlinearities in Bulk GaAs Determined by EL2 Defect
Autorzy:: Sudzius, M.
Bastiene, L.
Svitojus, S.
Jarasiunas, K.
Tematy:: 72.20.Jv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1952184.pdf Link otwiera się w nowym oknie
Opis:: Time-resolved studies of light diffraction on free carrier phase gratings and light absorption in subnanosecond time domain were carried out in two distinct areas of semi-insulating GaAs with high and low growth-defect density. Numerical analysis was performed in order to reveal the role of EL2 defect in carrier generation and transport. The possibility of transient grating technique to study various defect-governed carrier relaxation processes were demonstrated experimentally.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Transient Photo-Induced Current Measurements in High Resistivity ZnSe Crystals
Autorzy:: Bała, W.
Firszt, F.
Dul, D.
Turlo, Z.
Borkowski, J.
Tematy:: 72.20.Jv
72.40.+w; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1886609.pdf Link otwiera się w nowym oknie
Opis:: Using technique of computerized signal-averaging of photocurrent transient, we have studied the details of deep level states in high resistivity ZnSe crystals. The time resolved spectra of photocurrent and four-gate PICT spectra are presented.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Quasiparticles in Calcium Doped Yttrium-Iron Garnets
Autorzy:: Lehmann-Szweykowska, A.
Wojciechowski, R. J.
Gehring, G. A.
Tobijaszewski, I.
Tematy:: 72.20.Jv
72.80.Ga; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1955836.pdf Link otwiera się w nowym oknie
Opis:: In yttrium-iron garnets an electrical charge is carried by quasiparticles based on compensating holes which move either at oxygen or iron ions of the tetragonal sublattice. The quasiparticles can also get localized because of their coupling to optical phonons on the iron sites. A multi-band model of holes coupled to phonons is applied to find additional energy levels in the gap between the lower of the narrow 3d bands and the wide 2p band, whose occurrence plays a crucial role in a conductivity mechanism. The density of states is considerably modified by the interaction between the holes and local distortion of the lattice.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Slowup of Bimolecular Recombination in Organic Polymer Solar Cells
Autorzy:: Nunzi, J.-M.
Juška, G.
Jean, F.
Arlauskas, K.
Tematy:: 72.80.Le
72.20.Jv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2041795.pdf Link otwiera się w nowym oknie
Opis:: For the retrieval of best polymers for effective organic solar cells as testing parameter we have used the coefficient of bimolecular recombination (B). The B measurement demonstrated that in pure MEH-PPV layers its value is close to the value of Langevin recombination coefficient (B$\text{}_{L}$), while in case of perylene/MEH-PPV junction layers the ratio B/B$\text{}_{L}$≅0.013, and in blends of MEH-PPV with PCBM B/B$\text{}_{L}$<:0.01.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: SiO$\text{}_{2}$ Layer Charge State Variation in Fowler-Nordheim Tunneling Regime
Autorzy:: Strzałkowski, I.
Kowalski, M.
Tematy:: 72.20.Jv
73.40.Qv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1967939.pdf Link otwiera się w nowym oknie
Opis:: The charge build-up and its changes in the amorphous SiO$\text{}_{2}$ layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO$\text{}_{2}$ traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Influence of Oxygen Impurities on Electrical Properties of Fullerene C$\text{}_{60}$
Autorzy:: Rabenau, T.
Roth, S.
Kremer, R. K.
Tematy:: 72.20.Jv
72.80.Le
72.20.-i; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1933397.pdf Link otwiera się w nowym oknie
Opis:: We present high temperature dc, ac and contactless microwave conductivity results on solid-state C$\text{}_{60}$ (films and crystals) from room temperature up to 850 K. Heating pristine samples, which were exposed to the ambient atmosphere, under dynamic vacuum at first leads to a reduction of the electrical resistance and finally, above ≈700 K, to an increase in the resistance. The decrease is ascribed to oxygen desorption and the increase to the chemical reactivity of residual chemisorbed oxygen with the C$\text{}_{60}$ host molecules, respectively. Samples, annealed above 800 K, display a reversible temperature dependence of the resistance. The high temperature regime of their resistance exhibits an activated behaviour with an universal activation energy of 2E$\text{}_{a}$ = 1.85 ± 0.04 eV for crystals and films, which is identical to the HOMO-LUMO splitting of the C$\text{}_{60}$-molecules.
Dostawca treści:: Biblioteka Nauki

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