Temat: 73.50.Gr - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Hot Electron Ballistic Transport in Two Dimensional Structures
Autorzy:: Palevski, A.
Sivan, U.
Heiblum, M.
Umbach, C. P.
Strickman, H.
Tematy:: 73.50.Fq
73.50.Gr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1877494.pdf Link otwiera się w nowym oknie
Opis:: Quasi ballistic transport in a 2 dimension electron gas was explored and tunneling through an electrostatic barrier induced by metallic gates on the top of the heterostructure was demonstrated. For energies above 36 meV we observed the LO phonon emission, leading to a short mean free path. At energies below the phonon energy we find a mean free path of the order of 2 µm, about an order of magnitude longer than expected theoretically for electron interactions. The angular distribution of hot electrons injected from a point source was shown to be collimated and could be steered by controling the electrostatic profile of the injector. In addition we demonstrated operation of electrostatic lens which opens a new branch in semiconductor physics, namely, electron-optics in solids.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Double Injection Current Transients in a-Si:H
Autorzy:: Nekrašas, N.
Genevičius, K.
Juška, G.
Tematy:: 73.50.Gr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1813197.pdf Link otwiera się w nowym oknie
Opis:: In this work we present results of both computer modelling and experimental studies of double injection current transients in amorphous hydrogenated silicon thin layers.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Electroresistance of Electrically Nonhomogeneous La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO Thin Films
Autorzy:: Kiprijanovič, O.
Lučun, A.
Ašmontas, S.
Anisimovas, F.
Butkutė, R.
Maneikis, A.
Sužiedėlis, A.
Vengalis, B.
Tematy:: 73.50.Gr
73.50.Lw
73.63.Bd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2047239.pdf Link otwiera się w nowym oknie
Opis:: Current and electrical field-induced electroresistive effects were investigated for La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO thin films demonstrating nanosized electrical inhomogeneities. Two different models based on enhanced conductivity of intergrain boundaries by injecting spin-polarized carriers from ferromagnetic grains and electrical field-enhanced hopping of carriers in high resistance intergrain media were carried out to explain nonlinear electrical properties of the films.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Magnetic Field Influence on Auger Effect on Shallow Donors in CdF$\text{}_{2}$:Mn$\text{}^{2+}$ Luminescence
Autorzy:: Kamińska, A.
Suchocki, A.
Tematy:: 73.20.Hb
73.50.Gr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1968121.pdf Link otwiera się w nowym oknie
Opis:: Direct observation of the suppression of the Auger effect on shallow donors by the magnetic field in the luminescence of manganese ions in semiconducting CdF$\text{}_{2}$:Mn crystals is presented. The magnetic field decreases the probability of the Auger effect, which is spin-dependent energy transfer from the manganese ions to the electrons occupying shallow donors. This results in the increase in the decay times of the luminescence.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending
Autorzy:: Ambrazevičius, G.
Marcinkevičius, S.
Lideikis, T.
Naudžius, K.
Tematy:: 72.80.Ey
73.50.Gr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1921571.pdf Link otwiera się w nowym oknie
Opis:: Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Charge Carrier Transport in Non-Homogeneous MDMO-PPV Polymer
Autorzy:: Kažukauskas, V.
Pranaitis, M.
Janonis, V.
Tematy:: 73.20.Hb
73.50.Gr
73.50.Pz
73.61.Ph; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1505467.pdf Link otwiera się w nowym oknie
Opis:: By thermally stimulated currents we have investigated carrier transport and trapping in [poly-(2-methoxyl, 5-(3,77dimethyloctyloxy)] paraphenylenevinylene (MDMO-PPV). To assure selective excitation of the defect states the spectral width of the exciting light was varied from 1.77 eV up to 3.1 eV. The thermally stimulated current curves were shown to be a superposition of carrier generation from trapping states and thermally stimulated mobility growth. The extrinsic excitation resulted in 0.16 eV photoconductivity effective activation energy values, which decreased down to 0.05 eV for the intrinsic excitation. The deeper states with activation energies of 0.28-0.3 eV and 0.8-0.85 eV were identified, too. The results are direct indication of distributed in energy trapping and transport states with the standard deviation of the density of states of about 0.015 eV.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Peculiarities of Space-Charge-Limited Photocurrent
Autorzy:: Viliiūnas, M.
Juška, G.
Arlauskas, K.
Baltušis, V.
Tematy:: 73.50.Fq
73.50.Gr
73.61.Jc; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1968442.pdf Link otwiera się w nowym oknie
Opis:: We demonstrate new advantages of the space-charge-limited photocurrent technique for the investigations of charge carrier recombination. Bimolecular recombination coefficient in a-Si:H estimated according to suggested method for both electrons and holes is presented.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Electroresistance of La-Ca-MnO Thin Films
Autorzy:: Cimmperman, P.
Stankevič, V.
Žurauskienė, N.
Balevičius, S.
Anisimovas, F.
Paršeliūnas, J.
Kiprijanovič, O.
Altgilbers, L.
Tematy:: 73.50.Gr
73.50.Lw
73.63.Bd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2037104.pdf Link otwiera się w nowym oknie
Opis:: Epitaxial, textured, and polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$Mn O$\text{}_{3}$ films, having about 150 nm thickness, were prepared by pulsed laser deposition techniques onto (110) NdGaO$\text{}_{3}$, MgO and lucalox substrates and investigated using 10 ns duration, 0.5 ns rise time electrical pulses having amplitude up to 500 V. Electroresistance of the films [R(E)-R(0)]/R(0) was investigated up to 80 kV/cm electric field strengths in temperatures ranging from 300 K to 4.2 K. Strong (up to 93%) negative electroresistance was obtained in polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ films prepared on MgO and lucalox substrates. The epitaxial films grown on NdGaO$\text{}_{3}$ substrate demonstrated only a small resistance change due to Joule heating induced by a current pulse. It was concluded that electroresistance manifests itself in strongly inhomogeneous manganites films exhibiting a large number of structural imperfections producing ferromagnetic tunnel junction nets.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound
Autorzy:: Dussan, A.
Mesa, F.
Tematy:: 72.80.Ey
73.50.-h
73.61.Ga
73.50.Gr; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1207470.pdf Link otwiera się w nowym oknie
Opis:: In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, $Cu_3BiS_3$, SnS, $Cu_2ZnSnSe_4$, and $CuInGaSe_2$ thin films. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the diffusional model, the density of states near the Fermi level $(N_{F})$, as well as the hopping parameters (W - activation energy and R - hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the diffusional model in semiconductor compounds.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon
Autorzy:: Nekrašas, N.
Sliaužys, G.
Juška, G.
Arlauskas, K.
Stuchlik, J.
Kočka, J.
Tematy:: 73.50.Gr
72.20.Jv
84.60.Jt; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2041793.pdf Link otwiera się w nowym oknie
Opis:: In the multilayers of hydrogenated nanocrystalline and amorphous silicon bimolecular recombination coefficient can be reduced in half, while in low-temperature hydrogenated nanocrystalline silicon samples it can be reduced by one order of magnitude. The similarity of the activation energies of both the bimolecular recombination (B) and the Langevin-type recombination (B$\text{}_{L}$) coefficients point to decisive role of tunneling in processes of meeting of electrons and holes, although the ratio B/B$\text{}_{L}$<0.01.
Dostawca treści:: Biblioteka Nauki

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