Temat: 77.55.Dj - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: The Effect of Phosphorus Incorporation into $SiO_2$/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
Autorzy:: Król, K.
Konarski, P.
Miśnik, M.
Sochacki, M.
Szmidt, J.
Tematy:: 81.16.Pr
77.84.Bw
77.55.Dj; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1376053.pdf Link otwiera się w nowym oknie
Opis:: This paper describes the influence of phosphorus incorporation into $SiO_2$/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of $POCl_3$ annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at $E_{V}$ + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:: Król, K.
Kwietniewski, N.
Gierałtowska, S.
Wachnicki, Ł.
Sochacki, M.
Tematy:: 81.16.Pr
77.84.Bw
77.55.dj; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1033217.pdf Link otwiera się w nowym oknie
Opis:: The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: The Influence of Pressure on the Roughness of InGaP Layers
Autorzy:: Dumiszewska, E.
Knyps, P.
Wesolowski, M.
Teodorczyk, M.
Strupinski, W.
Tematy:: 77.55.dj
78.30.Fs
73.61.Ey
81.10.-h; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1492628.pdf Link otwiera się w nowym oknie
Opis:: Today, the technology of typical silicon-solar cells is fully developed and mature. In spite of its continuous improvements, the record efficiencies of 25.0% are approaching theoretical solar conversion limits of around 33.7%. Values much beyond this limit are likely to be achieved using III-V semiconductor compounds, electrical and optical properties are more suitable for solar energy conversion. They are the most promising candidates for realizing solar cells, which can achieve efficiencies of 50% and more. In this paper we studied the influence of pressure in the reactor chamber on the roughness of an InGaP "nucleation layer" grown on Ge. The growth of the layers was performed in a metalorganic vapour phase epitaxy reactor AIX 200/4. The source gases were trimethylgallium, trimethylindium and $AsH_3$. The rate of pressure in the reactor was raised from 100 mbar to 400 mbar by 50 mbar. The InGaP layers with the lowest roughness were achieved at the pressure of 400 mbar. The layers were characterized by very low roughness (RMS < 0.3) measured by atomic force microscopy. The quality of the surface was perfect enough to be applied in a solar cell structure.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:: Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A.
Tematy:: 77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2048120.pdf Link otwiera się w nowym oknie
Opis:: Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
Autorzy:: Taube, A.
Kruszka, R.
Borysiewicz, M.
Gierałtowska, S.
Kamińska, E.
Piotrowska, A.
Tematy:: 77.55.dj
77.22.Ch
73.40.Qv
81.15.Gh
81.15.Cd; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1492515.pdf Link otwiera się w nowym oknie
Opis:: The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Effect of Laser Scribing on Soft Magnetic Properties of Conventional Grain-Oriented Silicon Steel
Autorzy:: Petryshynets, I.
Puchý, V.
Kováč, F.
Šebek, M.
Tematy:: 61.72.-y
79.20.Eb
68.55.jm
77.80.Dj
75.50.Vv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1032233.pdf Link otwiera się w nowym oknie
Opis:: The present work investigates the influence of laser scribing of grain-oriented silicon steel on the improvement of its soft magnetic properties via magnetic domains modification. The experimental material was represented by conventional Fe-3%Si grain-oriented electrical steel that was taken directly from industrial line after the final box annealing. The laser scribing treatments were applied onto the material surface in order to induce thermal stresses having crucial influence on the magnetic domains refinement. The laser scribing conditions have been optimized by introducing thermal stresses onto the experimental material surface leading to optimal refinement of final domains structures and desired magnetic softness minimization. A semiquantitative relationship has been found between the domain patterns and the used fiber laser treating method. The obtained modified domain structure led to a significant decrease in coercivity measured in DC magnetic field from 20 A/m to 12 A/m.
Dostawca treści:: Biblioteka Nauki

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