Temat: 85.30.-z - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs diode formed by surface polymerization
Autorzy:: Ahmetoglu, M.
Kara, A.
Kucur, B.
Tematy:: 82.35.-x
85.30.-z; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1070425.pdf Link otwiera się w nowym oknie
Opis:: Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 2.

Tytuł:: Implementation on Visualization of Some Complex Physics Problems Embodied in Difficulty with Interactive Materials for Undergraduates
Autorzy:: Aydin, S.
Genç, H.
Tematy:: 02.70.-c
85.30.-z
85.30.De; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1033356.pdf Link otwiera się w nowym oknie
Opis:: Physical phenomena and the nature of materials require both qualitative and quantitative research to be understood thoroughly. This process often necessitates the use of complicated and expensive equipments. Also in electrical-electronics discipline, especially the nature of semiconductor materials and the behavior of them have a special place. In engineering education, it is often more important for undergraduates to understand the behavior of material and the results of that at the basic level. For this purpose it is sufficient to analyze semiconductor materials with interactive software unlike physics scholars who apply mostly physically to analyze. Understanding the physical properties of applied materials and digitalizing the characteristics of these materials by coding in programming environment maintain its importance. In this context, designing of interactive programs to analyze physical phenomena in electrical-electronics engineering without the need for licensed software has been presented. For this purpose, some semiconductor phenomena involved with electronics engineering have been selected as a pilot and web based 3D Java graphic AWT applications have been designed.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 3.

Tytuł:: Dynistor Switches for Micro- and Nanosecond Power Pulse Generators
Autorzy:: Aristov, Yu.
Grekhov, I.
Korotkov, S.
Lyublinsky, A.
Tematy:: 84.70.+p
84.30.Ng
85.30.-z
85.30.De; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1807898.pdf Link otwiera się w nowym oknie
Opis:: Gigawatt power switches for microsecond range applications based on an assembly of Reverse Switch-on Dynistors (RSD) and fast compact generators for nanosecond range applications based on new semiconductor devices Deep Level Dynistors (DLD) are discussed. As an example design and operation principles of 25 kV, 300 kA, 600 μs pulse duration power switch based on 76 mm diameter RSDs and 25 kV, 10 kA switch based on 16 mm diameter DLDs are described. It is possible to increase the pulse power by increasing both diameter of dynistor structure and number of devices connected in series or in parallel.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Modélisation des Caractéristiques du GaAs MESFET
Autorzy:: Kenzai, C.
Zaabat, M.
Saidi, Y.
Khiter, A.
Tematy:: 85.30.-z; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2014563.pdf Link otwiera się w nowym oknie
Opis:: A NEW MODELING OF THE CHARACTERISTICS OF GaAs MESFET'S: A new approach for I-V standard model is proposed. This approach allowed to conceive applicable model for MESFET's operating in the turn-one or pinch-off region, and valid for the short-channel and the long-channel MESFET's, in which the two-dimensional potential distribution contributed by the depletion layer under the gate is obtained by conventional 1D approximation. The drain current is decomposed into two components; the first is due to the conduction current flowing through the conduction channel, and the second component is a result of the current flowing through the space charge region resulting from the injection of the channel electrons into this last region. Moreover, comparison between the proposed analytical model and the experimental data are made and good agreement is obtained. In the end, this model is applied to estimate the cut-off frequency of the MESFET-GaAs from these static characteristics. This estimation is based on the theoretical calculation of the transconductance and the gate capacitance of the device.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 5.

Tytuł:: Electrical Characterization of Al/$Ta_2O_5$/Al Structures Grown by Electron Beam Deposition
Autorzy:: Yahia, I.
Farag, A.
Tematy:: 77.84.Bw
77.55.-g
81.10.Bk
85.30.Kk
85.30.-z; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1365248.pdf Link otwiera się w nowym oknie
Opis:: We report study of current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of Al/$Ta_2O_5$/Al metal-insulator-metal structures prepared by electron beam deposition. At low bias voltages the J-V characteristics of Al/$Ta_2O_5$/Al structures show ohmic conduction. At higher voltages the conductivity becomes limited by space charge. The space charge limited conductivity is due to carrier trap centers located within the energy gap of $Ta_2O_5$. The distribution of the trap appears to be exponential above the valence band. Basing on the comparison of the measured temperature dependences of the current density with the theoretical model one can determine important material parameters, such as the trap density. The density of states at the Fermi level $N(E_{F})$ for the $Ta_2O_5$ film is found to be 2.75 × $10^{19} eV^{-1} cm^{-3}$. The capacitance-voltage-temperature (C-V-T) characteristics of Al/$Ta_2O_5$/Al structures were carried out in the bias range -5 to +5 V and at temperatures from 300 to 550 K. The capacitance of Al/$Ta_2O_5$/Al structures increases with the increasing temperature.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 6.

Tytuł:: Light Emission Properties of GaN-Based Laser Diode Structures
Autorzy:: Godlewski, M.
Phillips, M. R.
Czernecki, R.
Targowski, G.
Perlin, P.
Leszczyński, M.
Figge, S.
Hommel, D.
Tematy:: 85.30.-z
78.60.Hk
68.37.Hk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2043715.pdf Link otwiera się w nowym oknie
Opis:: Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 7.

Tytuł:: Light-Emitting Diode Degradation and Low-Frequency Noise Characteristics
Autorzy:: Šaulys, B.
Matukas, J.
Palenskis, V.
Pralgauskaitė, S.
Kulikauskas, G.
Tematy:: 72.70.+m
74.40.-n
85.30.-z
85.60.Jb; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1505229.pdf Link otwiera się w nowym oknie
Opis:: Comprehensive investigation of phosphide-based red and nitride-based blue light-emitting diodes characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations, also their cross-correlation factor) shows that investigated LEDs degradation is caused by defects that lead to the leakage current and non-radiating recombination increase in the active region or its interfaces. Appearance of the defects first of all manifests in noise characteristics: intensive and strongly correlated $1//f^{α}$ type optical and electrical fluctuations come out.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 8.

Tytuł:: Nuclear and Optical Analyses of MOS Devices
Autorzy:: Rzodkiewicz, W.
Kulik, M.
Panas, A.
Kobzev, A.
Tematy:: 82.80.Yc
78.20.Ci
07.60.Fs
85.30.-z; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1400446.pdf Link otwiera się w nowym oknie
Opis:: The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 9.

Tytuł:: Microplasma Noise Stimulated by Microwave Electric Field
Autorzy:: Namajūnas, A.
Tamaševičius, A.
Mykolaitis, G.
Bumelienė, S.
Požela, J.
Tematy:: 05.40.Ca
52.25.Gj
72.70.+m
85.30.-z; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2041773.pdf Link otwiera się w nowym oknie
Opis:: Si and GaAs avalanche diodes containing microplasmas are investigated. Microwave field applied to the diode in addition to reverse dc bias results in considerable spread of noise spectrum and in the increase of noise power. The microplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh (300 to 1000 MHz) frequency bands, while the effective noise temperature is about 10$\text{}^{8}$ K.
Dostawca treści:: Biblioteka Nauki

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na półce

Skocz do pozycji: 10.

Tytuł:: Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111)
Autorzy:: Pustelny, B.
Pustelny, T.
Tematy:: 72.80.Ey
73.61.Ey
73.61.Jc
85.30.-z
71.20.Mq; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1807750.pdf Link otwiera się w nowym oknie
Opis:: The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near-surface region and the surface potential $V_{s}$ in GaP:Te(111) surfaces after their different technological treatments were determined.
Dostawca treści:: Biblioteka Nauki

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