Temat: 85.30.De - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Performance Enhancement of High Power High Repetition Rate Semiconductor Opening Switches
Autorzy:: Abbasi, A.
Niayesh, K.
Shakeri, J.
Tematy:: 85.30.De; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1807869.pdf Link otwiera się w nowym oknie
Opis:: High power semiconductor opening switches (SOSs) with $P^+PNN^+$ doping profile have been used in different pulsed power applications because of their fast high current interruption capability. In high pulsed power applications with high repetition rate, temperature increase of the semiconductor switch during its operation is no more negligible. In this paper, the cut-off characteristics of SOSs with different doping profiles are compared and then the impact of the temperature increase on the performance of the semiconductor opening switch is investigated using a detailed physical model. The simulation results indicate that due to the temperature increase of the switch, both the current amplitude and the cut-off characteristics of the switch are affected. Semiconductor opening switches with different base materials (Si and SiC) are studied. Due to favorable intrinsic characteristics of SiC (higher thermal conductivity, higher saturation velocity and higher breakdown electric field), the performance of the SOS can be enhanced using SiC as the base material and the design of compact high pulsed power applications can be achieved.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 2.

Tytuł:: Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology
Autorzy:: Kociubiński, A.
Tematy:: 85.30.De
85.30.Kk; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1030139.pdf Link otwiera się w nowym oknie
Opis:: Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 3.

Tytuł:: Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization
Autorzy:: Vasallo, B.
González, T.
Pardo, D.
Mateos, J.
Tematy:: 85.30.De
85.30.Tv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1505612.pdf Link otwiera się w nowym oknie
Opis:: The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 4.

Tytuł:: Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation
Autorzy:: Papadopoulou, P.
Stavrinides, S.
Hanias, M.
Magafas, L.
Tematy:: 85.30.De
85.30.Mn
85.30.Hi; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1401377.pdf Link otwiera się w nowym oknie
Opis:: In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 5.

Tytuł:: Fermi-Edge Singularity in Excitonic Spectra of Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:: Bugajski, M.
Regiński, K.
Godlewski, M.
Wesołowski, M.
Holtz, P. O.
Buyanov, A. V.
Monemar, B.
Tematy:: 71.35.+z
85.30.De; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1950741.pdf Link otwiera się w nowym oknie
Opis:: The dynamic response of an electron Fermi sea to the presence of optically generated holes gives rise to an enhanced interaction of correlated electron-hole pairs near the Fermi level, resulting in an enhanced oscillator strength for optical transitions, referred to as the Fermi-edge singularity. We studied this effect in modulation-doped quantum wells which provide confined dense Fermi sea, spatially separated from dopant atoms, easily accessible for investigations under low excitation conditions. The Fermi-edge singularity was observed in both photoluminescence and photoluminescence excitation experiments, although in the case of photoluminescence the samples had to be either co-doped with acceptors in the wells to provide necessary localization of holes or designed to allow for nearly resonant scattering between the electronic states near the Fermi energy and the next unoccupied subband of the 2D electron gas.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 6.

Tytuł:: Quantum-Interference Semiconductor Devices Revisited
Autorzy:: Figielski, T.
Tematy:: 73.23.-b
85.30.De; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/2027427.pdf Link otwiera się w nowym oknie
Opis:: First, a simple semiclassical approach has been applied to the problem of a quantum phase acquired by an electron carrying both the charge and spin, which travels in an electromagnetic field. Basic hypothetical devices whose operation relies on the quantum interference, including spin-related interference, are discussed in the following. Finally, experimental results demonstrating two-beam interference in a planar quantum dot are presented.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 7.

Tytuł:: Implementation on Visualization of Some Complex Physics Problems Embodied in Difficulty with Interactive Materials for Undergraduates
Autorzy:: Aydin, S.
Genç, H.
Tematy:: 02.70.-c
85.30.-z
85.30.De; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1033356.pdf Link otwiera się w nowym oknie
Opis:: Physical phenomena and the nature of materials require both qualitative and quantitative research to be understood thoroughly. This process often necessitates the use of complicated and expensive equipments. Also in electrical-electronics discipline, especially the nature of semiconductor materials and the behavior of them have a special place. In engineering education, it is often more important for undergraduates to understand the behavior of material and the results of that at the basic level. For this purpose it is sufficient to analyze semiconductor materials with interactive software unlike physics scholars who apply mostly physically to analyze. Understanding the physical properties of applied materials and digitalizing the characteristics of these materials by coding in programming environment maintain its importance. In this context, designing of interactive programs to analyze physical phenomena in electrical-electronics engineering without the need for licensed software has been presented. For this purpose, some semiconductor phenomena involved with electronics engineering have been selected as a pilot and web based 3D Java graphic AWT applications have been designed.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 8.

Tytuł:: AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation
Autorzy:: Boratyński, B.
Paszkiewicz, B.
Paszkiewicz, R.
Tłaczała, M.
Tematy:: 81.05.Hd
85.30.De
85.30.Tv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1585274.pdf Link otwiera się w nowym oknie
Opis:: AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× $10^{12} cm^{-2}$ and mobility of 1600 $cm^{2}$/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 9.

Tytuł:: Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Autorzy:: Vasallo, B.
Rodilla, H.
González, T.
Lefebvre, E.
Moschetti, G.
Grahn, J.
Mateos, J.
Tematy:: 85.30.De
85.30.Tv; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1506159.pdf Link otwiera się w nowym oknie
Opis:: We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage $V_{DS}$ is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current $I_{D}$ increases, leading to the kink effect in the I-V characteristics.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Skocz do pozycji: 10.

Tytuł:: Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE
Autorzy:: Kaniewska, M.
Regiński, K.
Muszalski, J.
Kryńska, D.
Litkowiec, A.
Kaniewski, J.
Wesołowski, M.
Bugajski, M.
Tematy:: 85.30.De
85.60.Jb
73.20.Dx; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Powiązania:: https://bibliotekanauki.pl/articles/1951031.pdf Link otwiera się w nowym oknie
Opis:: Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
Dostawca treści:: Biblioteka Nauki

Artykuł

na półce

Informacja

Wyszukujesz frazę "85.30.De" wg kryterium: Temat