Temat: MOSFET-only circuits

Skocz do pozycji: 1.

Tytuł:: A Simplified Design Methodology for MOSFET-Only Wideband Mixer
Autorzy:: Ortigueira, E.
Bastos, I.
Oliveira, L. B.
Oliveira, J. P.
Goes, J.
Tematy:: CMOS mixers
MOSFET-only circuits
Gilbert cell
active mixers
wideband mixers; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/227194.pdf Link otwiera się w nowym oknie
Opis:: In this paper we present a MOSFET-only implementation of a wideband Gilbert Cell. The circuit uses a commongate topology for a wideband input match, capable to cover the Wireless Medical Telemetry Service (WMTS) frequency bands of 600 MHz and 1.4 GHz. In this circuit the load resistors are replaced by transistors in triode region, to reduce area and cost, and minimize the effects of process and supply variations and mismatches. In addition, we obtain a higher gain for the same DC voltage drop, with a reduced impact on the noise figure (NF). The performance of this topology is compared with that of a conventional mixer with load resistors. Simulation results show that a peak gain of 20.6 dB (about 6 dB improvement) and a NF about of 11 dB for the 600 MHz band. The total power consumption is 3.6 mW from a 1.2 V supply.
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Analysis and design of a MOSFET-only wideband balun LNA
Autorzy:: Bastos, I.
Oliveira, L. B.
Goes, J.
Silva, M.
Tematy:: tranzystor polowy MOS-tylko obwody
redukcja hałasu
CMOS LNAs
MOSFET-only circuits
noise cancelling
wideband LNA; Pokaż więcej
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Powiązania:: https://bibliotekanauki.pl/articles/397861.pdf Link otwiera się w nowym oknie
Opis:: In this paper we present a MOSFET-only implementation of a balun LNA. This LNA is based on the combination of a common-gate and a common-source stage with cancellation of the noise of the common-gate stage. In this circuit, we replace resistors by transistors, to reduce area and cost, and to minimize the effect of process and supply variations and mismatches. In addition, we obtain a higher gain for the same voltage drop. Thus, the LNA gain is optimized and the noise figure (NF) is reduced. We derive equations for the gain, input matching and NF. The performance of this new topology is compared with that of a conventional LNA with resistors. Simulation results with a 130 nm CMOS technology show that we obtain a balun LNA with a peak gain of 20.2 dB (about 2 dB improvement), and a spot NF lower than 2.4 dB. The total power consumption is only 4.8 mW for a bandwidth higher than 6 GHz.
Dostawca treści:: Biblioteka Nauki

Artykuł

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