Temat: Silicon substrate - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: SOI Technology: An Opportunity for RF Designers?
Autorzy:: Raskin, J.-P.
Tematy:: crosstalk
high resistivity silicon substrate
MOSFET
nonlinearities
silicon-on-insulator
wideband characterization; Pokaż więcej
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:: https://bibliotekanauki.pl/articles/308241.pdf Link otwiera się w nowym oknie
Opis:: This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for high frequency (reaching cutoff frequencies close to 500 GHz for n-MOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-onchip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leading to substantially reduced substrate losses. Substrate resistivity values higher than 1 k? cm can easily be achieved and high resistivity silicon (HRS) is commonly foreseen as a promising substrate for radio frequency integrated circuits (RFIC) and mixed signal applications. In this paper, based on several experimental and simulation results the interest, limitations but also possible future improvements of the SOI MOS technology are presented.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiOxNy Thin Films
Autorzy:: Ismael, M. M.
Tematy:: Glass assisted CO2 laser
Silicon substrate
SiOxNy Thin Film; Pokaż więcej
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Powiązania:: https://bibliotekanauki.pl/articles/412157.pdf Link otwiera się w nowym oknie
Opis:: Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiOxNy thin films grown by glass assisted CO2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm-1) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm-1) with a FWHM of 73.863 cm-1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiOxNy/Si(111) and SiOxNy/Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 1013 and 1.57 × 1013 ev-1•cm-2 respectively.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Wpływ stosowania krzemianu potasu na wzrost, plonowanie i zdrowotność roślin pomidora ‘Growdena F1’ uprawianego na uprzednio użytkowanym substracie
The influence of application of potassium silicate on growth, fruit yield, and healthiness of ‘Growdena F1’ tomato plants grown in reused peat substrate
Autorzy:: Borkowski, J.
Murgrabia, A.
Dyki, B.
Kowalczyk, W.
Felczyńska, A.
Tematy:: tomato
reused peat substrate
silicon response; Pokaż więcej
Wydawca:: Instytut Ogrodnictwa
Powiązania:: https://bibliotekanauki.pl/articles/2119571.pdf Link otwiera się w nowym oknie
Opis:: The aim of the study was to examine reproductive and vegetative responses of ‘Growdena F1’ tomatoes (Solanum lycopersicum L.) to use of potassium silicate fertilizer (as Silvit 15.0% SiO3) into reused peat substrate. Investigations were carried out at a greenhouse in 2013 and 2014. Tomatoes were treated with potassium silicate 2 times: immediately after tomato planting and a month later, at a rate of 0.11 g silicon (Si) per plant per year. Potassium silicate was applied as 1% water solution during plant irrigation. In each term, 200 ml Silvit of Si-containing solution per plant was applied. Plants unsupplied with potassium silicate serves as the control. The results showed that application of potassium silicate was able to improve tomato root healthiness, but only in the second year of the study, when the presence of pathogens in the tested substrate was high. The increases in marketable and total fruit yields as a result of use of potassium silicate was found only in 2014. It is concluded that at high multiplication of root pathogens in the substrate, the application of Sicontaining fertilizers do not protect sufficiently roots against infection.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Special size effects in advanced single-gate and multiple-gate SOI transistors
Autorzy:: Ohata, A.
Ritzenthaler, R.
Faynot, O.
Cristoloveanu, S.
Tematy:: MOSFET
SOI
ultra-thin silicon
multiple-gate
mobility
coupling effect
thin gate oxide
gate-induced floating body effect
drain-induced virtual substrate biasing; Pokaż więcej
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:: https://bibliotekanauki.pl/articles/308994.pdf Link otwiera się w nowym oknie
Opis:: State-of-the-art SOI transistors require a very small body. This paper examines the effects of body thinning and thin-gate oxide in SOI MOSFETs on their electrical characteristics. In particular, the influence of film thickness on the interface coupling and carrier mobility is discussed. Due to coupling, the separation between the front and back channels is difficult in ultra-thin SOI MOSFETs. The implementation of the front-gate split C-V method and its limitations for determining the front- and back-channel mobility are described. The mobility in the front channel is smaller than that in the back channel due to additional Coulomb scattering. We also discuss the 3D coupling effects that occur in FinFETs with triple-gate and omega-gate configurations. In low-doped or tall fins the corner effect is suppressed. Narrow devices are virtually immune to substrate effects due to a strong lateral coupling between the two lateral sides of the gate. Short-channel effects are drastically reduced when the lateral coupling screens the drain influence.
Dostawca treści:: Biblioteka Nauki

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