Temat: bias instability - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Self-noise reduction in a FOG-based rotational seismometer confirmed by Allan variance analysis
Autorzy:: Zając, Piotr
Amrozik, Piotr
Kiełbik, Rafał
Maj, Cezary
Szermer, Michał
Starzak, Łukasz
Pękosławski, Bartosz
Jabłoński, Grzegorz
Tylman, Wojciech
Kurzych, Anna
Jaroszewicz, Leszek R.
Tematy:: fibre-optic rotational seismometer
fibre-optic gyroscope
Allan variance
noise
angle random walk
bias instability; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Powiązania:: https://bibliotekanauki.pl/articles/59112922.pdf Link otwiera się w nowym oknie
Opis:: Reducing noise in fibre-optic gyroscope (FOG)-based rotational seismometers is crucial in guaranteeing their applicability as future high-precision sensors. This paper presents a practical approach to noise analysis of a designed and manufactured FOG-based three-axis rotational seismometer. The performed measurements show that proper identification of noise sources and subsequent changes to the device’s configuration which addressed these noise issues, visibly improved the Allan deviation plot of the device. In particular, angle random walk was reduced from 100–200 to around 35 nrad/s/√Hz and bias instability - from several dozens down to single nrad/s. These improvements were achieved only by elimination or mitigation of the impact of all noise sources, without changing any optoelectronic components of the constructed device and without applying any additional post-processing methods.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Modeling of negative bias temperature instability
Autorzy:: Grasser, T.
Selberherr, S.
Tematy:: reliability
negative bias temperature instability
modeling
simulation
hydrogen
silicon dioxide
defects
interface states
semiconductor device equations; Pokaż więcej
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:: https://bibliotekanauki.pl/articles/308767.pdf Link otwiera się w nowym oknie
Opis:: Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over the last couple of years due to the high electric fields in the oxide and the routine incorporation of nitrogen. During negative bias temperature stress a shift in important parameters of PMOS transistors, such as the threshold voltage, subthreshold slope, and mobility is observed. Modeling efforts date back to the reaction-diffusion model proposed by Jeppson and Svensson thirty years ago which has been continuously refined since then. Although the reaction-diffusion model is able to explain many experimentally observed characteristics, some microscopic details are still not well understood. Recently, various alternative explanations have been put forward, some of them extending, some of them contradicting the standard reaction-diffusion model. We review these explanations with a special focus on modeling issues.
Dostawca treści:: Biblioteka Nauki

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