Temat: carbide - Prolib Integro

Skocz do pozycji: 1.

Tytuł:: Influence of tungsten and titanium on the structure of chromium cast iron
Autorzy:: Kopyciński, D.
Piasny, S.
Tematy:: żeliwo chromowe
węglik chromu
węglik tytanu
węglik wolframu
chromium cast iron
chromium carbide
titanium carbide
tungsten carbide; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/382431.pdf Link otwiera się w nowym oknie
Opis:: The paper analyses the as-cast state structure of chromium cast iron designed for operation under harsh impact-abrasive conditions. In the process of chromium iron castings manufacture, very strong influence on the structure of this material have the parameters of the technological process. Among others, adding to the Fe-Cr-C alloy the alloying elements like tungsten and titanium leads to the formation of additional carbides in the structure of this cast iron, which may favourably affect the casting properties, including the resistance to abrasive wear.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Investigation of Hardfacing Deposits Obtained by Using Submerged Arc Welding Fluxes Containing High-Carbon Ferrochromium and Ferroboron
Autorzy:: Kaptanoglu, Mustafa
Eroglu, Mehmet
Tematy:: submerged arc welding
hardfacing deposit
carbide
boro-carbide
welding flux; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czasopisma i Monografie PAN
Powiązania:: https://bibliotekanauki.pl/articles/59110590.pdf Link otwiera się w nowym oknie
Opis:: Hardfacing deposition processes were carried out using unalloyed S1-EL12 welding wire and submerged arc welding fluxes produced by agglomerated method containing 4-16 wt.% ferrochromium and 2 wt.% ferroboron to achieve wear-resistant of hardfacing deposits on common steel substrates via submerged arc welding. Typical parameters such as slag detachment behaviour, measurements of weld seam widths and heights, microstructural examinations, and hardness and wear tests of hardfacing deposits were characterized. End of the characterization processes, with the increase of chromium, carbon, and boron transition from welding fluxes to hardfacing deposits, the welding seam widths, and heights were determined to increase from 14.12 mm to 15.65 mm and 6.14 mm to 6.50 mm, respectively. Besides; carbide and boro-carbide ratios in the microstructures increased, the hardness values increased from 43 HRC to 61 HRC and the wear losses decreased from 5.79 to 4.43. (10-7 mm3 (Nm)-1).
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Effects of Transition Metal Carbides on Microstructure and Mechanical Properties of Ultrafine Tungsten Carbide Via Spark Plasma Sintering
Autorzy:: Lee, Jeong-Han
Oh, Ik-Hyun
Park, Hyun-Kuk
Tematy:: WC cemented carbide
transition metal carbide
spark plasma sintering
grain growth inhibitor
hardness; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/2048887.pdf Link otwiera się w nowym oknie
Opis:: WC-Co cemented carbides were consolidated using spark plasma sintering in the temperature 1400°C with transition metal carbides addition. The densification depended on exponentially as a function of sintering exponent. Moreover, the secondary (M, W)Cx phases were formed at the grain boundaries of WC basal facet. Corresponded, to increase the basal facets lead to the plastic deformation and oriented grain growth. A higher hardness was correlated with their grain size and lattice strain. We suggest that this is due to the formation energy of (M, W)Cx attributed to inhibit the grain growth and separates the WC/Co interface.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Development of Superior Thermal Protective Coating on Carbon Composites
Autorzy:: Bae, Soo Bin
Lee, Ji Eun
Paik, Jong Gyu
Cho, Nam Choon
Lee, Hyung Ik
Tematy:: composite
silicon carbide
CVR
CVD; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/354076.pdf Link otwiera się w nowym oknie
Opis:: A superior SiC based thermal protection coating process for carbon composite, which can be especially effective in a hot oxidizing atmosphere, was established in this study. A multi-coating process based on a combination of Chemical Vapor Reaction (CVR) and Chemical Vapor Deposition (CVD) was developed. Various protective coating layers on carbon composite were tested in hot oxidizing surroundings and the test results verified that the thermal ablation rate could be dramatically reduced down to 3.8% when the protective multi-coating was applied. The thermal protection mechanism of the coating layers was also investigated.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Napawanie warstw trudnościeralnych na stali Hardox metodami OAW i MMA
Deposition of hardfacing layers on Hardox steel by OAW and MMA
Autorzy:: Skrzypczyk, A.
Rutkowski, S.
Kasińska, J.
Tematy:: napawanie ręczne
spoiwa
węglik chromu
węglik wolframu
manual hardfacing
filler metal
chromium carbide
tungsten carbide; Pokaż więcej
Wydawca:: Politechnika Rzeszowska im. Ignacego Łukasiewicza. Oficyna Wydawnicza
Powiązania:: https://bibliotekanauki.pl/articles/195622.pdf Link otwiera się w nowym oknie
Opis:: W artykule przedstawiono efekty napawania warstw trudnościeralnych w postaci węgliku chromu i wolframu na stali Hardox. Napoiny układano ręcznie na odcinki blachy o wymiarach 120x80x10 mm metodami OAW (Oxy Acetylene Welding – 311) oraz MMA (Manual Metal Arc Welding – 111) pod kątem doboru optymalnych parametrów technologicznych. Przeprowadzono obserwacje mikroskopowe z obszaru napoiny, linii wtopienia i strefy wpływu ciepła. Dokonano analizy rozkładu pierwiastków na granicy napoina–materiał podstawowy. Dla obu wariantów technologicznych wykonano badania rozkładu twardości na przekrojach poprzecznych napoin. Autorzy pokazali wpływ zastosowanych technologii na sposób kształtowania się napoin oraz na ich właściwości.
This paper presents the effects of chromium and tungsten carbide hardfacing on Hardox steel. The padding welds were applied manually on the 120x80x10 mm steel plate sections using Oxy Acetylene Welding (311) and Manual Metal Arc Welding (111) to find the optimum processing parameters. The macrostructure of the padding welds was analyzed for quality. Microscopic observations of the padding weld, fusion line and heat affected zone were performed. The element distribution at the padding weld – base material boundary was analyzed. The distribution of hardness was investigated on the padding weld cross-sections for both technological variants. The authors demonstrated the influence of the technologies used on the formation mechanism and properties of the padding welds.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: TiAl-based Ohmic Contacts to p-type 4H-SiC
Autorzy:: Martychowiec, Agnieszka
Kwietniewski, Norbert
Kondracka, Kinga
Werbowy, Aleksander
Sochacki, Mariusz
Tematy:: ohmic contact
SiC
silicon carbide
TiAl; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/1844507.pdf Link otwiera się w nowym oknie
Opis:: This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Technological Possibilities of the Carbide Tools Application for Precision Machining of WCLV Hardened Steel
Autorzy:: Grabowski, Marcin
Gawlik, Józef
Krajewska-Śpiewak, Joanna
Skoczypiec, Sebastian
Tyczyński, Piotr
Tematy:: precision milling
WCLV steel
carbide tool; Pokaż więcej
Wydawca:: Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Powiązania:: https://bibliotekanauki.pl/articles/2022382.pdf Link otwiera się w nowym oknie
Opis:: Precision milling of free (curved) surfaces with the use of monolithic milling cutters is used in the production of hardened steel elements such as dies, molds, or press tools. Precision milling processes are carried out with the following milling parameters: axial cutting depth ap <0.3 mm, cutting width ae <0.5 mm and the required machining accuracy below 40 µm. The quality of the obtained surfaces in injection molds is directly transferred to the quality of the molded part. One of the key criteria for the manufactured elements is the surface quality which is mainly assessed by the roughness parameters. Due to the use of carbide tools high reliability and quality of machining is obtained which allows to eliminate the grinding process. In precision milling processes, due to the very small radius of the cutting edge and the cross-sections of the cutting layers, the conditions that must be met for the decohesion process to occur are fundamentally diff erent from macro-scale. The minimum value range of ap and ae parameters was determined in a carried-out experiment, which allows for stable and repeatable machining. The tests were carried out with double-edge shank cutters with a diameter of 6 mm on a workpiece made out of WCVL hardened steel 45–47 HRC. Recommended machining conditions have been defi ned to ensure the required technological quality of the surface layer. The research was fi nanced under the research project POIR.01.01.01-000890/17 co-fi nanced by the European Union from the European Regional Development Fund.
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Modelling of changes in the resistivity of semi-insulating materials
Autorzy:: Suproniuk, Marek
Tematy:: resistivity
semiconductor
gallium phosphide
silicon carbide; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/1849000.pdf Link otwiera się w nowym oknie
Opis:: Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Modelling of changes in the resistivity of semi-insulating materials
Autorzy:: Suproniuk, Marek
Tematy:: resistivity
semiconductor
gallium phosphide
silicon carbide; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/1849019.pdf Link otwiera się w nowym oknie
Opis:: Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Modelling of changes in the resistivity of semi-insulating materials
Autorzy:: Suproniuk, Marek
Tematy:: resistivity
semiconductor
gallium phosphide
silicon carbide; Pokaż więcej
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:: https://bibliotekanauki.pl/articles/1849057.pdf Link otwiera się w nowym oknie
Opis:: Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Dostawca treści:: Biblioteka Nauki

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