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Wyświetlanie 1-10 z 29
Tytuł:
Silicon-germanium for ULSI
Autorzy:
Hall, S.
Eccleston, B.
Tematy:
silicon-germanium
HBT
SiGe-CMOS
Pokaż więcej
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:
https://bibliotekanauki.pl/articles/309304.pdf  Link otwiera się w nowym oknie
Opis:
The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Artificial adaptive agent model characterized by learning and fairness in the ultimatum games
Autorzy:
Hayashida, T.
Nishizaki, I.
Katagiri, H.
Tematy:
oxidation
kinetics
modeling
silicon
silicon-germanium
Pokaż więcej
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:
https://bibliotekanauki.pl/articles/308565.pdf  Link otwiera się w nowym oknie
Opis:
This paper examines the result of the experimental research on the ultimatum games through simulation analysis. To do so, we develop agent-based simulation system imitating the behavior of human subjects in the laboratory experiment by implementing a learning mechanism involving a concept of fairness. In our agent-based simulation system, mechanisms of decision making and learning are constructed on the basis of neural networks and genetic algorithms.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oxidation kinetics of silicon strained by silicon germanium
Autorzy:
Grabowski, J.
Beck, R. B.
Tematy:
oxidation
kinetics
modeling
silicon
silicon-germanium
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Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:
https://bibliotekanauki.pl/articles/308659.pdf  Link otwiera się w nowym oknie
Opis:
This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model was fitted with good result to the obtained experimental data and the parameter that is most probably responsible for the strain effect was identified, as well as its dependence on Ge content in the SiGe layer.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region
Autorzy:
Durlin, Quentin
Aliane, Abdelkader
André, Luc
Kaya, Hacile
Cocq le, Mélanie
Goudon, Valérie
Vialle, Claire
Veillerot, Marc
Hartmann, Jean-Michel
Tematy:
germanium (Ge)
photodiode
shortwave infrared detector
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Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Powiązania:
https://bibliotekanauki.pl/articles/2204221.pdf  Link otwiera się w nowym oknie
Opis:
Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 10⁷ cmˉ² are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at -0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 μm diameter photodiodes is in the 5-20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 μm, respectively, is demonstrated with a 1.8 μm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 μm. These results pave the way for a cost-effective technology based on group-IV semiconductors.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Removal of ^{222}Rn daughters from metal surfaces
Autorzy:
Zuzel, Grzegorz
Wójcik, Marcin
Lampert, M. O.
Majorovits, B.
Wendling, P.
Wydawca:
American Institute of Physics
Opis:
Removal of the long-lived ^{222}Rn daughters (^{210} Pb, ^{210}Bi and ^{210}Po) from copper, stainless steel and germanium surfaces was investigated. As cleaning techniques etching and electro-polishing was applied to samples in a form of discs exposed earlier to a strong radon source. Reduction of the ^{210} Pb activity was tested using a HPGe spectrometer, for ^{210}Bi a beta spectrometer and for ^{210}Po an alpha spectrometer was used. According to the conducted measurements electro-polishing was always more efficient compared to etching and in case of copper the activity reduction factors for ^{210} Pb, ^{210}Bi and ^{210}Po were between 200 and 400. Etching does not remove ^{210}Po from copper but works very efficiently from germanium. Results obtained for ^{210} Pb and ^{210}Bi for etched stainless steel were worse but still slightly better than those achieved for copper.
Dostawca treści:
Repozytorium Uniwersytetu Jagiellońskiego
Inne
Tytuł:
Low frequency noise in Si and Si/SiGe/Si PMOSFETs
Autorzy:
Thomas, S. M.
Prest, M. J.
Fulgoni, D. J. F.
Bacon, A. R.
Grasby, T. J.
Leadley, D. R.
Parker, E. H. C.
Whall, T. E.
Tematy:
electronic noise
silicon-germanium heterostructures
MOSFET
dynamic threshold mode
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Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Powiązania:
https://bibliotekanauki.pl/articles/308779.pdf  Link otwiera się w nowym oknie
Opis:
Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Behavior of gallium and germanium associated with zinc sulfide concentrate in oxygen pressure leaching
Autorzy:
Liu, F.
Liu, Z.
Li, Y.
Wilson, B. P.
Lundstrom, M.
Tematy:
zinc sulfide concentrate
gallium
germanium
pyrite
oxygen pressure leaching
Pokaż więcej
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:
https://bibliotekanauki.pl/articles/110812.pdf  Link otwiera się w nowym oknie
Opis:
The Fankou zinc concentrate (Guangdong province, China) was mineralogically characterized and results showed that the main germanium-bearing minerals in the sample comprised of zinc sulfide and galena, whereas gallium-bearing minerals were pyrite, sphalerite and silicate. Oxygen pressure leaching of zinc sulfide concentrate was carried out in order to investigate the effect of pressure, leaching time, sulfuric acid and copper concentrations on the leaching behavior of gallium and germanium. Under optimum conditions, leaching of Zn, Fe, Ge and Ga reached 98.21, 90.45, 97.45 and 96.65%, respectively. In the leach residues, it was determined that some new precipitates, such as PbSO4, CaSO4 and SiO2, were formed, which co-precipitated a certain amount of Ga and Ge from the leach solution. The results clearly indicated that Ga and Ge were much more difficult to leach than Zn, and provided answers to why the leaching efficiency of Ga is 10% lower when compared to Ge.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Unique trace element geochemistry of pyrometamorphic apatite-supergroup minerals : a case study of fluorellestadite from burnt coal (Poland) and shale (France) post-mining waste heaps, with emphasis on boron, germanium, aluminium and titanium
Autorzy:
Kruszewski, Łukasz Sewweryn
Sláma, Jiří
Deput, Ewa
Tematy:
apatite supergroup
non-nominal ion substitution
boron
germanium
titanium
tetrahedra
Pokaż więcej
Wydawca:
Państwowy Instytut Geologiczny – Państwowy Instytut Badawczy
Powiązania:
https://bibliotekanauki.pl/articles/27323280.pdf  Link otwiera się w nowym oknie
Opis:
Apatite-type structure is known for its flexibility towards accommodating numerous ions of different crystallographic affinities. Two samples of fluorellestadite from two pyrometamorphic rocks (slags) from burned waste heaps (BWH) from France (LdS) and Poland (RDT) were studied in terms of their trace element composition using Laser Ablation Inductively Coupled Plasma Mass Spectrometry. Boron shows an evident, persistent enrichment in both the samples, with average/maximum levels of 497/1040 and 49/106 ppm, respectively. So is true for magnesium (884/16766 and 404/6251 ppm, i.e., respectively) and sodium (512/697 and 249/370 ppm, respectively). Germanium is clearly enriched in the first sample (29/40 ppm) and, to a lesser degree, in the second one (34 ppm on average). The LdS sample is also clearly enriched in Al (888/1238 ppm), K (385/697 ppm), Ti (515/943 ppm), V (172/347 ppm), and Cu (16/1369 ppm). The RDT sample is also rich in As (105/120 ppm) and Sr (1072/6592 ppm). An interesting feature of both samples concerns their REE pattern: Nd is the dominant element of the group, with the respective Nd/ΣLREE and Nd/(Ce+La) values of 0.43 and 0.90; and 0.37 and 0.66. In order from highest to lower average concentrations, aluminium, magnesium, titanium, boron, potassium, and germanium may be essential substituents in the BWH apatites.
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-10 z 29

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