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Wyszukujesz frazę "indium" wg kryterium: Temat


Tytuł:
Laser synthes and optimization of parameters of thin films and epitaxial layers of In4Se3, In4Te3
Autorzy:
Vorobets, G. I.
Strebezhev, V. V.
Tkach, V. M.
Vorobets, O. I.
Strebezhev, V. M.
Tematy:
semiconductor thin film
epitaxial layer
laser treatment
indium selenide
indium telluride
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Wydawca:
Tomasz Mariusz Majka
Powiązania:
https://bibliotekanauki.pl/articles/134893.pdf  Link otwiera się w nowym oknie
Opis:
The influence of the modes of laser treatment on the structural-phase state and electrical properties of thin films and epitaxial layers In4Se3, In4Te3, as well as on the thin-film structures with Schottky barrier of type Au - In4Te3 (In4Se3) are investigated. Thin films In4Se3, In4Te3 received by pulsed laser deposition of stoichiometric homogeneous crystalline materials on a dielectric substrate. The epitaxial layers of In4Se3, In4Te3 were obtained by liquid phase epitaxy. Metal contacts are created by thermal spraying of the respective metals in a vacuum p 10-6 ÷ 10-7 Torr. For the correction of electrophysical characteristics of the studied structures the pulse laser irradiation (PLI) with 1,06 m, 1 ÷ 4 ms was used. The surface morphology of the films on various stages of formation of the structures was investigated by SEM and electron diffraction, and the phase composition was monitored by method X - ray spectral electron probe microanalysis. Study of IV characteristics of film contacts Me - In4Te3 (In4Se3) allowed further identify the phase transformation and the basic mechanisms of charge transport in barrier structures after PLI. Investigation of the spectral photosensitivity of film structures showed that under optimum conditions the laser correction can be obtained the shift of the spectral characteristics from 1,7÷1,8 microns to longer wavelengths. The investigated barrier structures may be promising for use as a photodetector for fiber optic communication lines.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indium in polymetallic mineralisation at the Gierczyn mine, Karkonosze-Izera Massif, Poland : results of EPMA and LA-ICP-MS investigations
Autorzy:
Foltyn, Krzysztof
Bertrandsson Erlandsson, Viktor
Kozub-Budzyń, Gabriela Anna
Melcher, Frank
Piestrzyński, Adam
Tematy:
Gierczyn
indium
trace elements
metamorphism
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Wydawca:
Państwowy Instytut Geologiczny – Państwowy Instytut Badawczy
Powiązania:
https://bibliotekanauki.pl/articles/2058542.pdf  Link otwiera się w nowym oknie
Opis:
Cassiterite and base-metal mineralisation from the Gierczyn mine on the Karkonosze-Izera Massif, Poland has been studied using electron microprobe and LA-ICP-MS (Laser Ablation Inductively Coupled Plasma Mass Spectrometry) techniques in order to determine the content of indium in the ore minerals. The main carriers of this element are sphalerite (up to 433 μ/g of In), chalcopyrite (up to 117 μ/g of In) and cassiterite (up to 0.02 wt.% In). Trace element contents of sulphides, especially Ga in chalcopyrite intergrown with sphalerite in comparison with chalcopyrite without sphalerite, may indicate metamorphic re-equlibration and suggests that the ore minerals might recrystallized and underwent metamorphism in conditions of greenschist/amphibolite facies. Although the deposits in the Stara Kamienica Schist Belt are not of economic value, they can contribute to better understanding of the relations between trace element partitioning and the formation of ore minerals.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tuning the polarity of charge transport in InSb nanowires via heat treatment
Autorzy:
Sulka, Grzegorz
Hnida, Katarzyna
Nielsch, Kornelius
Łaszcz, Adam
Bäβler, Svenja
Gooth, Johannes
Socha, Robert P.
Czerwinski, Andrzej
Akinsinde, Lewis
Opis:
InSb nanowire (NW) arrays were prepared by pulsed electrodeposition combined with a porous template technique. The resulting polycrystalline material has a stoichiometric composition (In: Sb = 1:1) and a high length-to-diameter ratio. Based on a combination of Fourier transform infrared spectroscopy (FTIR) analysis and fi eld-effect measurements, the band gap, the charge carrier polarity, the carrier concentration, the mobility and the effective mass for the InSb NWs was investigated. In this preliminary work, a transition from p -type to n -type charge transport was observed when the InSb NWs were subjected to annealing.
Dostawca treści:
Repozytorium Uniwersytetu Jagiellońskiego
Artykuł
Tytuł:
Bioleaching of indium and tin from used LCD panels
Autorzy:
Willner, J.
Fornalczyk, A.
Gajda, B.
Saternus, M.
Tematy:
bioleaching
ITO
indium recovery
tin recovery
LCD panels
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Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:
https://bibliotekanauki.pl/articles/110195.pdf  Link otwiera się w nowym oknie
Opis:
The demand for indium is increasing every year. This metal is mainly used as indium tin oxide (ITO) in the production of transparent conductive coatings for liquid crystal displays (LCD). This paper focuses on biohydrometallurgical methods used for the recovery of indium and tin from LCD sourced from spent mobile phones. Bioleaching experiments were carried out in two different leaching media: 9K medium and H2SO4 solution, using mixed, adapted bacteria Acidothiobacillus ferrooxidans and Acidothiobacillus thiooxidans. The main aim of this study was to evaluate the potential and efficiency of indium and tin extraction in the presence of acidophilic microorganisms. Within 35 days, using 9K medium, 55.6% of indium was bioleached, whereas the chemical leaching resulted in a value of 3.4%. Leaching efficiency of tin was 90.2% on the 14th day of the experiment for the biological system (9K) and 93.4% on 21st day of control leaching.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LCD panels bioleaching with pure and mixed culture of Acidithiobacillus
Autorzy:
Willner, Joanna
Fornalczyk, Agnieszka
Saternus, Mariola
Sedlakova-Kadukova, Jana
Gajda, Bernadeta
Tematy:
bioleaching
aciditiooxidans
ITO
indium
tin
LCD panels
recovery
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Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:
https://bibliotekanauki.pl/articles/2146845.pdf  Link otwiera się w nowym oknie
Opis:
The influence of pure and mixed culture of A. ferrooxidans and A. tiooxidans as well as different pulp density (1 and 2%) of LCD panels on the In and Sn bioleaching efficiency was investigated. Pulp density is one of the factors affecting the metals extraction efficiency during biological leaching. It has been shown that lower pulp density results in higher indium and tin dissolution. The A. ferrooxidans bioleaching system showed better metal extraction results than A. thiooxidans, especially for tin, indicating the special role of iron and A. ferrooxidans in tin recovery. The highest leaching rate of both indium (94.7%) and tin (98.2%) was obtained using iron and sulfur medium inoculated with mixed bacteria and a pulp density of 1% w/v.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Using an Interdigital Micromixer for Separation of In3+ from Zinc Hydrometallurgical Process with D2EHPA as an Extractant
Autorzy:
Li, C.
Jiang, F.
Ju, S.
Peng, J.
Wei, Y.
Zhang, L.
Tematy:
interdigital micromixer
solvent extraction
mass transfer coefficient
indium
stripping
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Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:
https://bibliotekanauki.pl/articles/356090.pdf  Link otwiera się w nowym oknie
Opis:
Experiments were performed in an interdigital micromixer with 30 microchannels (40 μm width of each channel) to separate In3+, Fe3+ and Zn2+ from sulfate solutions using Di-(2-ethylhexyl)phosphoric acid (D2EHPA) as the extractant. The effects of pH, extractant concentration and flow rate on the extraction efficiency and flow rate on mass transfer coefficient of In3+, Fe3+ and Zn2+ were investigated. At a phase flow rate of 7.0 mL/min and initial solution pH of 0.423, the extraction efficiency of In3+, Fe3+ and Zn2+ was 99.29%, 3.43% and 2.54%, respectively and mass transfer coefficient of In3+, Fe3+ and Zn2+ was 144.307 s-1,1.018 s-1 and 0.750 s-1. Then, the loaded organic phase was stripped in an interdigital micromixer. At a phase flow rate of 9.0 mL/min and HCl concentration of 160 g/L, stripping efficiency of In3+ was 98.92% and mass transfer coefficient of In3+ was 169.808 s-1, while concentration of Fe3+ and Zn2+ was lower than 0.005 g/L with good separation of In3+ from Fe3+ and Zn2+.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrorefining of Indium Metal From Impure In-Sn Alloy in Fluoride Molten Salt
Autorzy:
Lee, Hyun-Gyu
Choi, Sang-Hoon
Sim, Jae-Jin
Lim, Jae-Hong
Hyun, Soong-Keun
Lee, Jong-Hyeon
Park, Kyoung-Tae
Tematy:
indium metal
molten salt electrolysis
cyclic voltammetry
chronopotentiometry
electrodeposition
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Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Powiązania:
https://bibliotekanauki.pl/articles/352615.pdf  Link otwiera się w nowym oknie
Opis:
In this study, molten salt electrorefining was used to recover indium metal from In-Sn crude metal sourced from indium tin oxide (ITO) scrap. The electrolyte used was a mixture of eutectic LiF-KF salt and InF3 initiator, melted and operated at 700°C. Voltammetric analysis was performed to optimize InF3 content in the electrolyte, and cyclic voltammetry (CV) was used to de-termine the redox potentials of In metal and the electrolyte. The optimum initiator concentration was 7 wt% of InF3 , at which the diffusion coefficients were saturated. The reduction potential was controlled by applying constant current densities of 5, 10, and 15 mA/cm2 using chronopotentiometry (CP) techniques. In metal from the In-Sn crude melt was deposited on the cathode surface and was collected in an alumina crucible.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Simple, responsive and cost effective simultaneous quantification of Ga(III) and In(III) in environmental water samples
Autorzy:
Grabarczyk, M.
Adamczyk, M.
Tematy:
gallium(III)
indium(III)
trace analysis
environmental
water samples
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Wydawca:
Polska Akademia Nauk. Instytut Agrofizyki PAN
Powiązania:
https://bibliotekanauki.pl/articles/2082480.pdf  Link otwiera się w nowym oknie
Opis:
The simultaneous determination of Ga(III) and In(III) in environmental water samples was described. The procedure was based on adsorptive stripping voltammetry using an in situ plated bismuth film electrode as a working electrode. In order to obtain low detection limits and satisfactory separations of gallium and indium peaks on the voltammogram, cupferron was used as a complexing agent. The optimum composition of the supporting electrolyte was found to be: 0.1 mol l-1 acetate buffer (pH=5.0), 2 × 10-4 mol l-1 cupferron, 2 × 10-4 mol l-1 Bi(III), optimal voltammetric parameters were found to be: accumulation potential -0.9 V, accumulation time 60 s. The linear range of Ga(III) as well as In(III) was observed over a concentration range from 2.5 × 10-8 mol l-1 to 1.5 × 10-6 mol l-1. The method was satisfactorily applied to the simultaneous quantification of gallium and indium in environmental water samples. This facilitated a promising application of the recommended procedure for monitoring the environment, which is necessary to evaluate the soil-plant system.
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evaluation of electrical resistivity, residual stress and surface roughness of sputtering indium tin oxide films with different thicknesses
Autorzy:
Tien, Chuen-Lin
Lin, Tsai-Wei
Su, Shu-Hui
Tematy:
indium tin oxide
magnetron sputtering
residual stress
surface roughness
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Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Powiązania:
https://bibliotekanauki.pl/articles/2033888.pdf  Link otwiera się w nowym oknie
Opis:
This paper investigates the influence of film thickness on the electrical and mechanical properties of transparent indium tin oxide (ITO) thin films. Two groups of ITO thin films deposited on unheated substrates were prepared by the radio-frequency magnetron sputtering technique. The biaxial residual stress and surface roughness for two groups of ITO thin films were measured by a Twyman–Green interferometer and a Linnik microscopic interferometer, respectively. The electrical resistivity of the ITO films was measured by a four-point probe apparatus, the thickness was determined mechanically with a profilometer. The measurement results show that the average resistivity of ITO thin films decreases with increasing the deposited thickness. The compressive residual stress in the ITO thin films decreases with increasing the deposited thickness. We also find that an anisotropic stress in the two groups of ITO films is more compressive in a certain direction. The RMS surface roughness in the two groups of ITO films is less than 1 nm.
Dostawca treści:
Biblioteka Nauki
Artykuł

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